Inventor · disambiguated record
Frank Seliger
Also filed as: SELIGER FRANK
19 granted patents·205 citations·filing 1999–2013
94Inventor score
Top patents by PatentIndex Score
19 records- 0194US8560857B2Information processing apparatus, a server apparatus, a method of an information processing apparatus, a method of a server apparatus, and an apparatus executable programMUNETOH SEIJI·Filed 2012·Granted Oct 15, 2013·23 cites·20 claims
- 0288US7981740B2Enhanced cap layer integrity in a high-K metal gate stack by using a hard mask for offset spacer patterningGLOBALFOUNDRIES INC·Filed 2010·Granted Jul 19, 2011·13 cites·21 claims
- 0384US8258062B2Cap layer removal in a high-K metal gate stack by using an etch processRICHTER RALF·Filed 2010·Granted Sep 4, 2012·8 cites·25 claims
- 0481US7375032B2Semiconductor substrate thinning method for manufacturing thinned dieADVANCED MICRO DEVICES INC·Filed 2005·Granted May 20, 2008·11 cites·22 claims
- 0581US6892301B1Method and system for securely handling information between two information processing devicesIBM·Filed 1999·Granted May 10, 2005·98 cites·32 claims
- 0675US8765542B1Methods of forming a semiconductor device while preventing or reducing loss of active area and/or isolation regionsGLOBALFOUNDARIES INC·Filed 2013·Granted Jul 1, 2014·4 cites·16 claims
- 0775US8765559B2Sophisticated gate electrode structures formed by cap layer removal with reduced loss of embedded strain-inducing semiconductor materialKRONHOLZ STEPHAN·Filed 2012·Granted Jul 1, 2014·4 cites·20 claims
- 0875US8171295B2Information processing apparatus, a server apparatus, a method of an information processing apparatus, a method of a server apparatus, and an apparatus executable processMUNETOH SEIJI·Filed 2004·Granted May 1, 2012·19 cites·12 claims
- 0973US8338284B2Stress engineering in a contact level of semiconductor devices by stressed conductive layers and an isolation spacerFROHBERG KAI·Filed 2010·Granted Dec 25, 2012·4 cites·15 claims
- 1069US8932930B2Enhancing integrity of a high-K gate stack by protecting a liner at the gate bottom during gate head exposureADVANCED MICRO DEVICES INC·Filed 2012·Granted Jan 13, 2015·2 cites·4 claims
- 1166US7951677B2Corner rounding in a replacement gate approach based on a sacrificial fill material applied prior to work function metal depositionGLOBALFOUNDRIES INC·Filed 2010·Granted May 31, 2011·2 cites·20 claims
- 1265US7757950B2Election system enabling coercion-free remote votingIBM·Filed 2009·Granted Jul 20, 2010·4 cites·20 claims
- 1365US7564977B2System, method and program product for anonymous transfer of messagesIBM·Filed 2005·Granted Jul 21, 2009·5 cites·12 claims
- 1465US7490768B2Election system enabling coercion-free remote votingIBM·Filed 2005·Granted Feb 17, 2009·4 cites·8 claims
- 1564US8329549B2Enhancing integrity of a high-k gate stack by protecting a liner at the gate bottom during gate head exposureBEYER SVEN·Filed 2009·Granted Dec 11, 2012·2 cites·17 claims
- 1663US8338306B2Forming semiconductor resistors in a semiconductor device comprising metal gates by increasing etch resistivity of the resistorsHEINRICH JENS·Filed 2010·Granted Dec 25, 2012·2 cites·16 claims
- 1750US8561446B2Method and device for fabricating bonding wires on the basis of microelectronic manufacturing techniquesLEHR MATTHIAS·Filed 2009·Granted Oct 22, 2013·0 cites·24 claims
- 1838US8329526B2Cap removal in a high-k metal gate electrode structure by using a sacrificial fill materialHEINRICH JENS·Filed 2010·Granted Dec 11, 2012·0 cites·17 claims
- 1934US8987103B2Multi-step deposition of a spacer material for reducing void formation in a dielectric material of a contact level of a semiconductor deviceLENSKI MARKUS·Filed 2010·Granted Mar 24, 2015·0 cites·21 claims
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