Inventor · disambiguated record
Sang-Ryol Yang
Also filed as: YANG SANG-RYOL
12 granted patents·11 pending applications·271 citations·filing 2004–2017
92Inventor score
Top patents by PatentIndex Score
23 records- 0197US7419888B2Method of forming a silicon-rich nanocrystalline structure by an atomic layer deposition process and method of manufacturing a non-volatile semiconductor device using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Sep 2, 2008·71 cites·35 claims
- 0295US8309405B2Three dimensional semiconductor memory device and method of fabricating the sameYANG SANG-RYOL·Filed 2011·Granted Nov 13, 2012·44 cites·19 claims
- 0393US7510935B2Method of manufacturing a charge-trapping dielectric and method of manufacturing a sonos-type non-volatile semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Mar 31, 2009·26 cites·18 claims
- 0493US6962876B2Method for forming a low-k dielectric layer for a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Nov 8, 2005·77 cites·17 claims
- 0590US7723755B2Semiconductor having buried word line cell structure and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted May 25, 2010·18 cites·12 claims
- 0687US8970039B2Integrated circuit devices including electrode support structures and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2012·Granted Mar 3, 2015·9 cites·15 claims
- 0782US8815676B2Three dimensional semiconductor memory device and method of fabricating the sameYANG SANG-RYOL·Filed 2012·Granted Aug 26, 2014·6 cites·18 claims
- 0882US8815697B2Method of fabricating semiconductor deviceYOON JUN-HO·Filed 2012·Granted Aug 26, 2014·9 cites·19 claims
- 0978US7951671B2Method of fabricating non-volatile memory device having separate charge trap patternsSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted May 31, 2011·6 cites·16 claims
- 1063US8330207B2Flash memory device including multilayer tunnel insulator and method of fabricating the sameBAEK SUNG-KWEON·Filed 2008·Granted Dec 11, 2012·3 cites·9 claims
- 1161US8445367B2Methods of manufacturing semiconductor devicesNOH JIN-TAE·Filed 2011·Granted May 21, 2013·2 cites·20 claims
- 1259US2015191818A1Vertical furnaceSAMSUNG ELECTRONICS CO LTD·Filed 2014·Application pending·0 cites
- 1352US2008048277A1Gate of a transistor and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 1449US2009179252A1Flash memory device including multilayer tunnel insulator and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Application pending·0 cites
- 1547US2008105919A1Non-volatile memory device having separate charge trap patterns and method of fabricating the sameLIM JU-WAN·Filed 2007·Application pending·0 cites
- 1646US2011045667A1Gate of a transistor and method of forming the sameKIM JIN-GYUN·Filed 2010·Application pending·0 cites
- 1745US7759192B2Semiconductor device including capacitor and method of fabricating sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jul 20, 2010·0 cites·17 claims
- 1844US2009072294A1Method of manufacturing a non-volatile memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 1943US2008073690A1Flash memory device including multilayer tunnel insulator and method of fabricating the sameBAEK SUNG-KWEON·Filed 2006·Application pending·0 cites
- 2040US2007111545A1Methods of forming silicon dioxide layers using atomic layer depositionLEE SUNG-HAE·Filed 2006·Application pending·0 cites
- 2138US2018114706A1Wafer boat assembly and substrate processing apparatus including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Application pending·0 cites
- 2236US2012156848A1Method of manufacturing non-volatile memory device and contact plugs of semiconductor deviceYANG SANG-RYOL·Filed 2011·Application pending·0 cites
- 2334US2007042548A1Methods of forming floating gates in non-volatile memory devices including alternating layers of amorphous silicon and ALD dopant layers and floating gates so formedNOH JIN-TAE·Filed 2006·Application pending·0 cites
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