Inventor · disambiguated record
Ruigang Li
Also filed as: LI RUIGANG
12 granted patents·21 pending applications·113 citations·filing 2007–2023
86Inventor score
Top patents by PatentIndex Score
33 records- 0196US8003466B2Method of forming multiple fins for a semiconductor deviceADVANCED MICRO DEVICES INC·Filed 2008·Granted Aug 23, 2011·91 cites·12 claims
- 0284US8050077B2Semiconductor device with transistor-based fuses and related programming methodADVANCED MICRO DEVICES INC·Filed 2009·Granted Nov 1, 2011·9 cites·8 claims
- 0383US10529867B1Schottky diode having double p-type epitaxial layers with high breakdown voltage and surge current capabilityREN NA·Filed 2018·Granted Jan 7, 2020·6 cites·14 claims
- 0478US8481386B2Nanocrystal memories and methods of forming the sameLIU JIANLIN·Filed 2010·Granted Jul 9, 2013·7 cites·9 claims
- 0558US12125924B2Merged PiN Schottky (MPS) diode with plasma spreading layer and manufacturing method thereofYU XIAOTIAN·Filed 2023·Granted Oct 22, 2024·0 cites·3 claims
- 0652US2021098579A1Schottky diode with high breakdown voltage and surge current capability using double p-type epitaxial layersREN NA·Filed 2020·Application pending·0 cites
- 0750US11728439B2Merged PiN Schottky (MPS) diode with plasma spreading layer and manufacturing method thereofYU XIAOTIAN·Filed 2021·Granted Aug 15, 2023·0 cites·4 claims
- 0848US2020027953A1Schottky diode with high breakdown voltage and surge current capability using double p-type epitaxial layersREN NA·Filed 2019·Application pending·0 cites
- 0945US11380757B2Metal terminal edge for semiconductor structure and method of forming the sameZUO ZHENG·Filed 2020·Granted Jul 5, 2022·0 cites·12 claims
- 1044US10672883B2Mixed trench junction barrier Schottky diode and method fabricating sameREN NA·Filed 2018·Granted Jun 2, 2020·0 cites·17 claims
- 1141US2021218346A1Inverter system with minimum output filterLI YANCHAO·Filed 2021·Application pending·0 cites
- 1241US2021218348A1THREE-PHASE FULL SiC INVERTER WITH ZERO-VOLTAGE SWITCHING CAPABILITYLI YANCHAO·Filed 2021·Application pending·0 cites
- 1340US2021218344A1Boost inverter system with enhanced tolerance for low voltage input busLI YANCHAO·Filed 2021·Application pending·0 cites
- 1440US2021218341A1Multilevel step-up inverter based on distributed passive componentsLI YANCHAO·Filed 2021·Application pending·0 cites
- 1539US8687417B2Electronic device and method of biasingLI RUIGANG·Filed 2007·Granted Apr 1, 2014·0 cites·9 claims
- 1639US8089125B2Integrated circuit system with triodeZHU JIANHONG·Filed 2007·Granted Jan 3, 2012·0 cites·18 claims
- 1738US2020321478A1Trench junction barrier schottky diode with voltage reducing layer and manufacturing method thereofREN NA·Filed 2019·Application pending·0 cites
- 1837US2020321477A1Multi-schottky-layer trench junction barrier schottky diode and manufacturing method thereofREN NA·Filed 2019·Application pending·0 cites
- 1937US2022181443A1Power MOSFET With Enhanced Cell DesignYU XIAOTIAN·Filed 2021·Application pending·0 cites
- 2036US2021028167A1Analog integrated circuit with improved transistor lifetime and method for manufacturing the sameZUO ZHENG·Filed 2020·Application pending·0 cites
- 2136US2021328077A1Merged PiN Schottky (MPS) Diode With Multiple Cell Designs And Manufacturing Method ThereofYU XIAOTIAN·Filed 2021·Application pending·0 cites
- 2236US2021328078A1Merged PiN Schottky (MPS) Diode With Plasma Spreading Layer And Manufacturing Method ThereofYU XIAOTIAN·Filed 2021·Application pending·0 cites
- 2335US10497636B2Passivation for silicon carbide (SiC) device and method for fabricating sameZUO ZHENG·Filed 2016·Granted Dec 3, 2019·0 cites·10 claims
- 2435US9960247B2Schottky barrier structure for silicon carbide (SiC) power devicesLI RUIGANG·Filed 2017·Granted May 1, 2018·0 cites·7 claims
- 2535US2020266292A1Composite substrates of conductive and insulating or semi-insulating silicon carbide for gallium nitride devicesLI RUIGANG·Filed 2019·Application pending·0 cites
- 2635US2020019063A1Method for nickel etchingZUO ZHENG·Filed 2019·Application pending·0 cites
- 2734US2020312967A1Metal terminal edge for semiconductor structure and method of forming the sameZUO ZHENG·Filed 2019·Application pending·0 cites
- 2834US2018358478A1Trench type junction barrier schottky diode with voltage reducing layer and manufacturing method thereofREN NA·Filed 2018·Application pending·0 cites
- 2934US2018358477A1Trench type junction barrier schottky diode and manufacturing method thereofREN NA·Filed 2018·Application pending·0 cites
- 3033US2021036167A1MERGED PiN SCHOTTKY (MPS) DIODE WITH PLASMA SPREADING LAYER AND MANUFACTURING METHOD THEREOFYU XIAOTIAN·Filed 2020·Application pending·0 cites
- 3133US2021036165A1MERGED PiN SCHOTTKY (MPS) DIODE WITH ENHANCED SURGE CURRENT CAPACITYYU XIAOTIAN·Filed 2020·Application pending·0 cites
- 3233US2021036166A1MERGED PiN SCHOTTKY (MPS) DIODE WITH MULTIPLE CELL DESIGN AND MANUFACTURING METHOD THEREOFYU XIAOTIAN·Filed 2020·Application pending·0 cites
- 3332US2020194583A1Metal source ldmos semiconductor device and manufacturing method thereofZUO ZHENG·Filed 2019·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →