Inventor · disambiguated record
Bernard Rodmacq
Also filed as: RODMACQ BERNARD
13 granted patents·838 citations·filing 1999–2012
92Inventor score
Top patents by PatentIndex Score
13 records- 0198US6603677B2Three-layered stacked magnetic spin polarization device with memoryCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2001·Granted Aug 5, 2003·329 cites·11 claims
- 0298US6532164B2Magnetic spin polarization and magnetization rotation device with memory and writing process, using such a deviceCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2001·Granted Mar 11, 2003·359 cites·24 claims
- 0396US7813202B2Thin-film magnetic device with strong spin polarization perpendicular to the plane of the layers, magnetic tunnel junction and spin valve using such a deviceCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2007·Granted Oct 12, 2010·38 cites·16 claims
- 0490US8513944B2Three-layer magnetic element, magnetic field sensor, magnetic memory and magnetic logic gate using such an elementRODMACQ BERNARD·Filed 2010·Granted Aug 20, 2013·17 cites·26 claims
- 0590US7453672B2Spin valve magnetoresistive device with conductive-magnetic material bridges in a dielectric or semiconducting layer alternatively of magnetic materialCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2002·Granted Nov 18, 2008·37 cites·16 claims
- 0687US7772659B2Magnetic device having perpendicular magnetization and interaction compensating interlayerCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2007·Granted Aug 10, 2010·33 cites·12 claims
- 0783US8247093B2Magnetic multilayer device, method for producing such a device, magnetic field sensor, magnetic memory and logic gate using such a deviceRODMACQ BERNARD·Filed 2007·Granted Aug 21, 2012·16 cites·22 claims
- 0867US8400735B2Magnetic recording mediumDIENY BERNARD·Filed 2008·Granted Mar 19, 2013·1 cites·18 claims
- 0961US7830640B2Spin valve magnetoresistive device with conductive-magnetic material bridges in a dielectric or semiconductor layer alternatively of magnetic materialCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2008·Granted Nov 9, 2010·0 cites·15 claims
- 1060US7138193B2Data storage medium with laterally magnetized pad and method for making sameCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2002·Granted Nov 21, 2006·4 cites·7 claims
- 1154US7767255B2Information storage medium with laterally magnetised dot array, and process for producing said mediumCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2006·Granted Aug 3, 2010·0 cites·21 claims
- 1232US8643130B2Magnetic stack and memory cell comprising such a stackBANDIERA SEBASTIEN·Filed 2012·Granted Feb 4, 2014·0 cites·12 claims
- 1329US6165329AMultilayer magnetic transducer and structure having a high magnetoresistance and process for the production of the structureCOMMISSARIAT ENERGIE ATOMIQUE·Filed 1999·Granted Dec 26, 2000·4 cites·18 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →