Inventor · disambiguated record
Guo Xiang Song
Also filed as: Song guo xiang
8 granted patents·2 pending applications·16 citations·filing 2020–2023
79Inventor score
Files withSILICON STORAGE TECH INC10
Top patents by PatentIndex Score
10 records- 0197US11316024B2Split-gate non-volatile memory cells with erase gates disposed over word line gates, and method of making sameSILICON STORAGE TECH INC·Filed 2021·Granted Apr 26, 2022·6 cites·8 claims
- 0296US11315635B2Split-gate, 2-bit non-volatile memory cell with erase gate disposed over word line gate, and method of making sameSILICON STORAGE TECH INC·Filed 2021·Granted Apr 26, 2022·5 cites·13 claims
- 0391US11737266B2Method of forming a semiconductor device with memory cells, high voltage devices and logic devices on a substrateSILICON STORAGE TECH INC·Filed 2021·Granted Aug 22, 2023·2 cites·16 claims
- 0489US11322507B2Method of making memory cells, high voltage devices and logic devices on a substrate with silicide on conductive blocksSILICON STORAGE TECH INC·Filed 2021·Granted May 3, 2022·2 cites·17 claims
- 0583US11315940B2Method of forming a device with planar split gate non-volatile memory cells, high voltage devices and FinFET logic devicesSILICON STORAGE TECH INC·Filed 2021·Granted Apr 26, 2022·1 cites·10 claims
- 0671US2023189520A1Split gate non-volatile memory cells, hv and logic devices with finfet structures, and method of making sameSILICON STORAGE TECH INC·Filed 2023·Application pending·0 cites
- 0763US11621335B2Method of making split-gate non-volatile memory cells with erase gates disposed over word line gatesSILICON STORAGE TECH INC·Filed 2022·Granted Apr 4, 2023·0 cites·8 claims
- 0858US2022139940A1Split gate non-volatile memory cells, hv and logic devices with finfet structures, and method of making sameSILICON STORAGE TECH INC·Filed 2021·Application pending·0 cites
- 0952US11799005B2Split-gate flash memory cell with improved control gate capacitive coupling, and method of making sameSILICON STORAGE TECH INC·Filed 2021·Granted Oct 24, 2023·0 cites·4 claims
- 1046US11444091B2Method of making memory cells, high voltage devices and logic devices on a substrateSILICON STORAGE TECH INC·Filed 2020·Granted Sep 13, 2022·0 cites·11 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →