Inventor · disambiguated record
Ding-Yuan Chen
Also filed as: CHEN DING-YUAN
52 granted patents·13 pending applications·236 citations·filing 2007–2022
98Inventor score
Files withYU CHEN-HUA17CHEN DING-YUAN15TAIWAN SEMICONDUCTOR MFG9TSMC SOLID STATE LIGHTING LTD6TAIWAN SEMICONDUCTOR MFG CO LTD4
Top patents by PatentIndex Score
65 records- 0197US8629465B2Light-emitting diodes on concave texture substrateYU CHEN-HUA·Filed 2012·Granted Jan 14, 2014·16 cites·19 claims
- 0295US8058082B2Light-emitting diode with textured substrateYU CHEN-HUA·Filed 2008·Granted Nov 15, 2011·28 cites·19 claims
- 0393US8278125B2Group-III nitride epitaxial layer on silicon substrateCHEN DING-YUAN·Filed 2011·Granted Oct 2, 2012·12 cites·20 claims
- 0493US8058669B2Light-emitting diode integration schemeCHEN DING-YUAN·Filed 2009·Granted Nov 15, 2011·25 cites·19 claims
- 0592US7993998B2CMOS devices having dual high-mobility channelsTAIWAN SEMICONDUCTOR MFG·Filed 2008·Granted Aug 9, 2011·17 cites·11 claims
- 0691US8134163B2Light-emitting diodes on concave texture substrateYU CHEN-HUA·Filed 2008·Granted Mar 13, 2012·14 cites·14 claims
- 0790US8609448B2Omnidirectional reflectorTSMC SOLID STATE LIGHTING LTD·Filed 2013·Granted Dec 17, 2013·5 cites·20 claims
- 0890US8525216B2Light-emitting diode integration schemeCHEN DING-YUAN·Filed 2011·Granted Sep 3, 2013·10 cites·20 claims
- 0990US8377796B2III-V compound semiconductor epitaxy from a non-III-V substrateTAIWAN SEMICONDUCTOR MFG·Filed 2009·Granted Feb 19, 2013·11 cites·26 claims
- 1089US9214613B2Method of forming light-generating device including reflective layerTSMC SOLID STATE LIGHTING LTD·Filed 2014·Granted Dec 15, 2015·3 cites·16 claims
- 1189US8546176B2Forming chalcogenide semiconductor absorbersLEE WEN-CHIN·Filed 2010·Granted Oct 1, 2013·8 cites·22 claims
- 1289US8134169B2Patterned substrate for hetero-epitaxial growth of group-III nitride filmYU CHEN-HUA·Filed 2008·Granted Mar 13, 2012·12 cites·17 claims
- 1389US8030666B2Group-III nitride epitaxial layer on silicon substrateTAIWAN SEMICONDUCTOR MFG·Filed 2008·Granted Oct 4, 2011·11 cites·20 claims
- 1488US8659033B2Light-emitting diode with textured substrateYU CHEN-HUA·Filed 2011·Granted Feb 25, 2014·4 cites·15 claims
- 1588US7875534B2Realizing N-face III-nitride semiconductors by nitridation treatmentTAIWAN SEMICONDUCTOR MFG·Filed 2008·Granted Jan 25, 2011·10 cites·15 claims
- 1686US8236583B2Method of separating light-emitting diode from a growth substrateCHEN DING-YUAN·Filed 2009·Granted Aug 7, 2012·5 cites·21 claims
- 1785US8044409B2III-nitride based semiconductor structure with multiple conductive tunneling layerTAIWAN SEMICONDUCTOR MFG·Filed 2008·Granted Oct 25, 2011·9 cites·17 claims
- 1884US10269616B2Method of fabricating semiconductor device isolation structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 23, 2019·2 cites·20 claims
- 1984US8883597B2Method of fabrication of a FinFET elementCHANG CHENG-HUNG·Filed 2007·Granted Nov 11, 2014·13 cites·12 claims
- 2080US8716723B2Reflective layer between light-emitting diodesCHEN DING-YUAN·Filed 2008·Granted May 6, 2014·4 cites·20 claims
- 2177US8519414B2III-nitride based semiconductor structure with multiple conductive tunneling layerYU CHIA-LIN·Filed 2011·Granted Aug 27, 2013·3 cites·14 claims
- 2276US9583912B2Compact optical and laser systems and ultrafast laser utilizing the sameHC PHOTONICS CORP·Filed 2015·Granted Feb 28, 2017·2 cites·7 claims
- 2373US9373755B2Light-emitting diodes on concave texture substrateEPISTAR CORP·Filed 2013·Granted Jun 21, 2016·1 cites·16 claims
- 2473US8823049B2Light-emitting diode with current-spreading regionTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Sep 2, 2014·1 cites·19 claims
- 2572US8486807B2Realizing N-face III-nitride semiconductors by nitridation treatmentYU CHEN-HUA·Filed 2010·Granted Jul 16, 2013·2 cites·7 claims
- 2671US8110890B2Method of fabricating semiconductor device isolation structureYU CHEN-HUA·Filed 2007·Granted Feb 7, 2012·2 cites·19 claims
- 2767US8486730B2Method of separating light-emitting diode from a growth substrateCHEN DING-YUAN·Filed 2012·Granted Jul 16, 2013·0 cites·20 claims
- 2865US9130115B2Light-emitting diode with textured substrateTSMC SOLID STATE LIGHTING LTD·Filed 2014·Granted Sep 8, 2015·0 cites·20 claims
- 2965US8815618B2Light-emitting diode on a conductive substrateCHEN DING-YUAN·Filed 2009·Granted Aug 26, 2014·1 cites·21 claims
- 3064US10062821B2Light-emitting deviceEPISTAR CORP·Filed 2017·Granted Aug 28, 2018·0 cites·11 claims
- 3164US8779445B2Stress-alleviation layer for LED structuresYU CHEN-HUA·Filed 2008·Granted Jul 15, 2014·2 cites·21 claims
- 3264US8766309B2Omnidirectional reflectorTSMC SOLID STATE LIGHTING LTD·Filed 2013·Granted Jul 1, 2014·0 cites·20 claims
- 3364US8148732B2Carbon-containing semiconductor substrateYU CHEN-HUA·Filed 2009·Granted Apr 3, 2012·1 cites·20 claims
- 3463US8803189B2III-V compound semiconductor epitaxy using lateral overgrowthYU CHEN-HUA·Filed 2009·Granted Aug 12, 2014·1 cites·30 claims
- 3563US2015053918A1Light-emitting diode with current-spreading regionTSMC SOLID STATE LIGHTING LTD·Filed 2014·Application pending·0 cites
- 3662US8415691B2Omnidirectional reflectorCHEN DING-YUAN·Filed 2008·Granted Apr 9, 2013·1 cites·20 claims
- 3760US9698325B2Light-emitting device including reflective layerEPISTAR CORP·Filed 2015·Granted Jul 4, 2017·0 cites·21 claims
- 3859US9117943B2Semiconductor package with through silicon viasTSMC SOLID STATE LIGHTING LTD·Filed 2014·Granted Aug 25, 2015·0 cites·20 claims
- 3959US8878252B2III-V compound semiconductor epitaxy from a non-III-V substrateTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Nov 4, 2014·0 cites·20 claims
- 4058US8435820B2Patterned substrate for hetero-epitaxial growth of group-III nitride filmYU CHEN-HUA·Filed 2012·Granted May 7, 2013·0 cites·20 claims
- 4158US8399273B2Light-emitting diode with current-spreading regionCHEN DING-YUAN·Filed 2009·Granted Mar 19, 2013·0 cites·17 claims
- 4257US9673082B2Method of fabricating semiconductor device isolation structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jun 6, 2017·0 cites·20 claims
- 4357US2013082296A1LED Device with Embedded Top ElectrodeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2012·Application pending·0 cites
- 4456US8686474B2III-V compound semiconductor epitaxy from a non-III-V substrateTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Apr 1, 2014·0 cites·19 claims
- 4556US8278679B2LED device with embedded top electrodeYU CHEN-HUA·Filed 2008·Granted Oct 2, 2012·0 cites·20 claims
- 4655US9472552B2CMOS devices having dual high-mobility channelsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Oct 18, 2016·0 cites·17 claims
- 4755US9224606B2Method of fabricating semiconductor device isolation structureYU CHEN-HUA·Filed 2011·Granted Dec 29, 2015·0 cites·19 claims
- 4852US8742441B2Light-emitting diode with embedded elementsCHEN DING-YUAN·Filed 2009·Granted Jun 3, 2014·0 cites·20 claims
- 4951US11163694B2Memory control method, memory storage device and memory control circuit unitPHISON ELECTRONICS CORP·Filed 2019·Granted Nov 2, 2021·0 cites·21 claims
- 5051US8525200B2Light-emitting diode with non-metallic reflectorCHEN DING-YUAN·Filed 2008·Granted Sep 3, 2013·0 cites·16 claims
Showing the top 50 of 65 patent records by PatentIndex Score.
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