Inventor · disambiguated record
Shigehiko Saida
Also filed as: SAIDA SHIGEHIKO
25 granted patents·6 pending applications·585 citations·filing 1996–2015
97Inventor score
Files withTOSHIBA KK29
Top patents by PatentIndex Score
31 records- 0197US6333547B1Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2000·Granted Dec 25, 2001·110 cites·14 claims
- 0290US6774462B2Semiconductor device comprising dual silicon nitride layers with varying nitrogen ratioTOSHIBA KK·Filed 2002·Granted Aug 10, 2004·39 cites·14 claims
- 0389US6903422B2Semiconductor integrated circuits, fabrication method for the same and semiconductor integrated circuit systemsTOSHIBA KK·Filed 2003·Granted Jun 7, 2005·38 cites·4 claims
- 0488US7372113B2Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2004·Granted May 13, 2008·31 cites·20 claims
- 0588US6326658B1Semiconductor device including an interface layer containing chlorineTOSHIBA KK·Filed 1999·Granted Dec 4, 2001·52 cites·2 claims
- 0684US6790723B2Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2001·Granted Sep 14, 2004·22 cites·4 claims
- 0784US6284583B1Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 1998·Granted Sep 4, 2001·60 cites·20 claims
- 0881US5866930ASemiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 1996·Granted Feb 2, 1999·49 cites·20 claims
- 0978US5869858ASemiconductor device for reducing variations in characteristics of the deviceTOSHIBA KK·Filed 1996·Granted Feb 9, 1999·55 cites·21 claims
- 1077US7081386B2Semiconductor device and method of manufactuing the sameTOSHIBA KK·Filed 2004·Granted Jul 25, 2006·17 cites·16 claims
- 1176US5949102ASemiconductor device having a gate electrode with only two crystal grainsTOSHIBA KK·Filed 1997·Granted Sep 7, 1999·37 cites·14 claims
- 1272US6794713B2Semiconductor device and method of manufacturing the same including a dual layer raised source and drainTOSHIBA KK·Filed 2003·Granted Sep 21, 2004·14 cites·4 claims
- 1368US6713359B1Semiconductor device and method of manufacturing the same including raised source/drain comprising SiGe or SiCTOSHIBA KK·Filed 2000·Granted Mar 30, 2004·12 cites·15 claims
- 1465US7098115B2Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2004·Granted Aug 29, 2006·7 cites·9 claims
- 1562US6772045B2System for determining dry cleaning timing, method for determining dry cleaning timing, dry cleaning method, and method for manufacturing semiconductor deviceTOSHIBA KK·Filed 2002·Granted Aug 3, 2004·8 cites·27 claims
- 1660US7060555B2Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2004·Granted Jun 13, 2006·5 cites·6 claims
- 1755USRE46122ESemiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2015·Granted Aug 23, 2016·0 cites·23 claims
- 1855US6146938AMethod of fabricating semiconductor deviceTOSHIBA KK·Filed 1999·Granted Nov 14, 2000·18 cites·12 claims
- 1954US7129132B2Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2004·Granted Oct 31, 2006·3 cites·3 claims
- 2054US6538271B2Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2001·Granted Mar 25, 2003·3 cites·6 claims
- 2154US2007215958A1Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2007·Application pending·0 cites
- 2253US7148158B2Semiconductor device and method for manufacturing the sameTOSHIBA KK·Filed 2004·Granted Dec 12, 2006·4 cites·15 claims
- 2352US7541233B2Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2008·Granted Jun 2, 2009·0 cites·13 claims
- 2449US7612401B2Non-volatile memory cellTOSHIBA KK·Filed 2006·Granted Nov 3, 2009·0 cites·4 claims
- 2548US6841850B2Semiconductor device having silicon nitride film and silicon oxide film, and method of fabricating the sameTOSHIBA KK·Filed 2002·Granted Jan 11, 2005·1 cites·9 claims
- 2648US2006141701A1Semiconductor device having trench capacitors and method for making the trench capacitorsTOSHIBA KK·Filed 2006·Application pending·0 cites
- 2745US6992020B2Method of fabricating semiconductor deviceTOSHIBA KK·Filed 2004·Granted Jan 31, 2006·0 cites·12 claims
- 2838US2003127695A1Semiconductor device and method for manufacturing the sameTOSHIBA KK·Filed 2003·Application pending·0 cites
- 2938US2005006686A1Semiconductor device having trench capacitors and method for making the trench capacitorsFiled 2004·Application pending·0 cites
- 3036US2002024082A1Semiconductor memory and manufacturing method thereofTOSHIBA KK·Filed 2001·Application pending·0 cites
- 3135US2003042558A1Nonvolatile semiconductor memory device having erasing characteristic improvedFiled 2002·Application pending·0 cites
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