Inventor · disambiguated record
Chih-Ping Chao
Also filed as: CHAO CHIH-PING
44 granted patents·4 pending applications·408 citations·filing 1995–2025
97Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD18TAIWAN SEMICONDUCTOR MFG15YEH DER-CHYANG3CHANG CHUNG-LONG2UNIV PRINCETON2
Top patents by PatentIndex Score
48 records- 0197US7701038B2High-gain vertex lateral bipolar junction transistorTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Apr 20, 2010·81 cites·20 claims
- 0293US6287924B1Integrated circuit and methodTEXAS INSTRUMENTS INC·Filed 1999·Granted Sep 11, 2001·118 cites·2 claims
- 0391US2025359336A1Multi-function substrateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0489US9761546B2Trap layer substrate stacking technique to improve performance for RF devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Sep 12, 2017·5 cites·20 claims
- 0588US12471379B2Multi-function substrateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Nov 11, 2025·0 cites·20 claims
- 0687US7335956B2Capacitor device with vertically arranged capacitor regions of various kindsTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Feb 26, 2008·18 cites·22 claims
- 0786US8324713B2Profile design for lateral-vertical bipolar junction transistorCHEN SHUO-MAO·Filed 2010·Granted Dec 4, 2012·9 cites·17 claims
- 0884US8765600B2Contact structure for reducing gate resistance and method of making the sameCHANG CHUNG-LONG·Filed 2010·Granted Jul 1, 2014·10 cites·20 claims
- 0984US7545022B2Capacitor pairs with improved mismatch performanceTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Jun 9, 2009·11 cites·5 claims
- 1081US12113071B2Multi-function substrateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 8, 2024·0 cites·20 claims
- 1181US8334579B2Schottky diodeYEH PING CHUN·Filed 2010·Granted Dec 18, 2012·8 cites·20 claims
- 1281US8330251B2Semiconductor device structure for reducing mismatch effectsCHANG CHUNG-LONG·Filed 2006·Granted Dec 11, 2012·11 cites·18 claims
- 1380US8080461B2Method of making a thin film resistorYEH DER-CHYANG·Filed 2010·Granted Dec 20, 2011·6 cites·17 claims
- 1480US6903644B2Inductor device having improved quality factorTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Jun 7, 2005·28 cites·31 claims
- 1579US8169014B2Interdigitated capacitive structure for an integrated circuitCHEN YUEH-YOU·Filed 2006·Granted May 1, 2012·14 cites·14 claims
- 1675US7923817B2Capacitor pairs with improved mismatch performanceTAIWAN SEMICONDUCTOR MFG·Filed 2009·Granted Apr 12, 2011·5 cites·10 claims
- 1775US2025056894A1Semiconductor structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1874US11532642B2Multi-function substrateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 20, 2022·0 cites·20 claims
- 1974US8334187B2Hard mask for thin film resistor manufactureCHANG LI-WEN·Filed 2010·Granted Dec 18, 2012·4 cites·20 claims
- 2073US10515949B2Integrated circuit and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Dec 24, 2019·3 cites·20 claims
- 2171US11264378B2Integrated circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 1, 2022·1 cites·20 claims
- 2271US5859866APhotonic integration using a twin waveguide structureUNIV PRINCETON·Filed 1997·Granted Jan 12, 1999·45 cites·26 claims
- 2365US12159873B2Semiconductor structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 3, 2024·0 cites·20 claims
- 2465US7718494B2Method for forming high-drain-voltage tolerance MOSFET transistor in a CMOS process flow with double well dose approachTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted May 18, 2010·8 cites·16 claims
- 2564US11121100B2Trap layer substrate stacking technique to improve performance for RF devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 14, 2021·0 cites·20 claims
- 2662US8941211B2Integrated circuit using deep trench through silicon (DTS)TAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jan 27, 2015·1 cites·20 claims
- 2762US7612984B2Layout for capacitor pair with high capacitance matchingTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Nov 3, 2009·2 cites·19 claims
- 2858US11121098B2Trap layer substrate stacking technique to improve performance for RF devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Sep 14, 2021·0 cites·20 claims
- 2956US9607121B2Cascode CMOS structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Mar 28, 2017·0 cites·19 claims
- 3056US8993393B2Multiple silicide integration structure and methodYEH DER-CHYANG·Filed 2010·Granted Mar 31, 2015·1 cites·20 claims
- 3156US7968968B2Inductor utilizing pad metal layerTAIWAN SEMICONDUCTOR MFG·Filed 2010·Granted Jun 28, 2011·1 cites·12 claims
- 3255US8971014B2Protection structure for metal-oxide-metal capacitorHUA WEI-CHUN·Filed 2011·Granted Mar 3, 2015·1 cites·20 claims
- 3353US9230988B2Mechanisms for forming radio frequency (RF) area of integrated circuit structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Jan 5, 2016·0 cites·20 claims
- 3452US5655041AMethod and apparatus for active alignment of semiconductor optical waveguidesUNIV PRINCETON·Filed 1995·Granted Aug 5, 1997·17 cites·30 claims
- 3551US10068836B2Metal gate transistor, integrated circuits, systems, and fabrication methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Sep 4, 2018·0 cites·20 claims
- 3650US9589831B2Mechanisms for forming radio frequency (RF) area of integrated circuit structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Mar 7, 2017·0 cites·20 claims
- 3748US9391067B2Multiple silicide integration structure and methodTAIWAN SEMICONDUCTOR MFG·Filed 2015·Granted Jul 12, 2016·0 cites·20 claims
- 3846US10090327B2Semiconductor device and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Oct 2, 2018·0 cites·19 claims
- 3946US8847321B2Cascode CMOS structureHSUEH FU-LUNG·Filed 2010·Granted Sep 30, 2014·0 cites·11 claims
- 4045US10102972B2Method of forming capacitor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Oct 16, 2018·0 cites·20 claims
- 4145US9620421B2Metal gate transistor, integrated circuits, systems, and fabrication methods thereofHO CHIEN-CHIH·Filed 2010·Granted Apr 11, 2017·0 cites·21 claims
- 4245US9343352B2Integrated circuit using deep trench through silicon (DTS)TAIWAN SEMICONDUCTOR MFG·Filed 2015·Granted May 17, 2016·0 cites·20 claims
- 4344US7521330B2Methods for forming capacitor structuresTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Apr 21, 2009·0 cites·20 claims
- 4442US7468305B2Forming pocket and LDD regions using separate masksTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Dec 23, 2008·0 cites·14 claims
- 4541US2008122029A1Inductor utilizing pad metal layerTAIWAN SEMICONDUCTOR MFG·Filed 2006·Application pending·0 cites
- 4640US9583564B2Isolation structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Feb 28, 2017·0 cites·21 claims
- 4740US2008029830A1Forming reverse-extension MOS in standard CMOS flowTAIWAN SEMICONDUCTOR MFG·Filed 2006·Application pending·0 cites
- 4832US8581347B2Forming bipolar transistor through fast EPI-growth on polysiliconYEH DER-CHYANG·Filed 2010·Granted Nov 12, 2013·0 cites·12 claims
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