Inventor · disambiguated record
Jeff Babcock
Also filed as: BABCOCK JEFF · BABCOCK JEFF A · BABCOCK JEFF ARCHIMEDES
10 granted patents·2 pending applications·125 citations·filing 2001–2021
89Inventor score
Files withNAT SEMICONDUCTOR CORP4CREE MICROWAVE INC2CREE MICROWAVE LLC2BABCOCK JEFF A1ROVEC ACQUISITIONS LTD LLC1
Top patents by PatentIndex Score
12 records- 0188US7719048B1Heating element for enhanced E2PROMNAT SEMICONDUCTOR CORP·Filed 2007·Granted May 18, 2010·13 cites·5 claims
- 0288US7061057B2Laterally diffused MOS transistor having N+ source contact to N-doped substrateCREE MICROWAVE LLC·Filed 2004·Granted Jun 13, 2006·47 cites·22 claims
- 0380US7663173B1Non-volatile memory cell with poly filled trench as control gate and fully isolated substrate as charge storageNAT SEMICONDUCTOR CORP·Filed 2007·Granted Feb 16, 2010·12 cites·19 claims
- 0479US8247862B2Method of enhancing charge storage in an E2PROM cellBABCOCK JEFF A·Filed 2010·Granted Aug 21, 2012·8 cites·2 claims
- 0575USRE42403ELaterally diffused MOS transistor having N+ source contact to N-doped substrateROVEC ACQUISITIONS LTD LLC·Filed 2008·Granted May 31, 2011·7 cites·29 claims
- 0669US7307314B2LDMOS transistor with improved gate shieldCREE MICROWAVE LLC·Filed 2004·Granted Dec 11, 2007·19 cites·7 claims
- 0766US7572708B1Utilization of doped glass on the sidewall of the emitter window in a bipolar transistor structureNAT SEMICONDUCTOR CORP·Filed 2007·Granted Aug 11, 2009·5 cites·18 claims
- 0864US6759592B1Kaolin additive in mineral insulated metal sheathed cablesTYCO THERMAL CONTROL UK LTD·Filed 2001·Granted Jul 6, 2004·14 cites·15 claims
- 0941US11955530B2RF MOS varactorTEXAS INSTRUMENTS INC·Filed 2021·Granted Apr 9, 2024·0 cites·22 claims
- 1037US2005280087A1Laterally diffused MOS transistor having source capacitor and gate shieldCREE MICROWAVE INC·Filed 2004·Application pending·0 cites
- 1134US2005280085A1LDMOS transistor having gate shield and trench source capacitorCREE MICROWAVE INC·Filed 2004·Application pending·0 cites
- 1229US7808034B1Non-volatile memory cell with fully isolated substrate as charge storageNAT SEMICONDUCTOR CORP·Filed 2007·Granted Oct 5, 2010·0 cites·9 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →