Inventor · disambiguated record
Jeremy I. Martin
Also filed as: MARTIN JEREMY · MARTIN JEREMY I · MARTIN JEREMY ISAAC
16 granted patents·1 pending application·321 citations·filing 2000–2005
94Inventor score
Top patents by PatentIndex Score
17 records- 0194US6436808B1NH3/N2-plasma treatment to prevent organic ILD degradationADVANCED MICRO DEVICES INC·Filed 2000·Granted Aug 20, 2002·82 cites·30 claims
- 0288US6498112B1Graded oxide caps on low dielectric constant (low K) chemical vapor deposition (CVD) filmsADVANCED MICRO DEVICES INC·Filed 2001·Granted Dec 24, 2002·34 cites·16 claims
- 0385US6797652B1Copper damascene with low-k capping layer and improved electromigration reliabilityADVANCED MICRO DEVICES INC·Filed 2002·Granted Sep 28, 2004·35 cites·12 claims
- 0482US6600333B1Method and test structure for characterizing sidewall damage in a semiconductor deviceADVANCED MICRO DEVICES INC·Filed 2000·Granted Jul 29, 2003·28 cites·10 claims
- 0581US6927113B1Semiconductor component and method of manufactureADVANCED MICRO DEVICES INC·Filed 2003·Granted Aug 9, 2005·31 cites·24 claims
- 0677US6610594B2Locally increasing sidewall density by ion implantationADVANCED MICRO DEVICES INC·Filed 2001·Granted Aug 26, 2003·20 cites·45 claims
- 0777US6500755B2Resist trim process to define small openings in dielectric layersADVANCED MICRO DEVICES INC·Filed 2000·Granted Dec 31, 2002·18 cites·23 claims
- 0876US6514844B1Sidewall treatment for low dielectric constant (low K) materials by ion implantationADVANCED MICRO DEVICES INC·Filed 2001·Granted Feb 4, 2003·21 cites·32 claims
- 0971US7369905B1Method and apparatus for pressure and plasma control during transitions used to create graded interfaces by multi-step PECVD depositionADVANCED MICRO DEVICES INC·Filed 2005·Granted May 6, 2008·1 cites·18 claims
- 1071US6294472B1Dual slurry particle sizes for reducing microscratching of wafersADVANCED MICRO DEVICES INC·Filed 2000·Granted Sep 25, 2001·15 cites·59 claims
- 1168US6420193B1Repair of film having an SI-O backboneADVANCE MICRO DEVICES INC·Filed 2000·Granted Jul 16, 2002·15 cites·26 claims
- 1260US7737021B1Resist trim process to define small openings in dielectric layersGLOBALFOUNDRIES INC·Filed 2002·Granted Jun 15, 2010·6 cites·26 claims
- 1355US6989601B1Copper damascene with low-k capping layer and improved electromigration reliabilityADVANCED MICRO DEVICES INC·Filed 2004·Granted Jan 24, 2006·5 cites·8 claims
- 1455US6406993B1Method of defining small openings in dielectric layersADVANCED MICRO DEVICES INC·Filed 2000·Granted Jun 18, 2002·7 cites·28 claims
- 1551US6642619B1System and method for adhesion improvement at an interface between fluorine doped silicon oxide and tantalumADVANCED MICRO DEVICES INC·Filed 2000·Granted Nov 4, 2003·3 cites·7 claims
- 1639US7381660B2Dielectric barrier layer for a copper metallization layer having a varying silicon concentration along its thicknessADVANCED MICRO DEVICES INC·Filed 2003·Granted Jun 3, 2008·0 cites·18 claims
- 1734US2001051420A1Dielectric formation to seal porosity of low dielectic constant (low k) materials after etchFiled 2000·Application pending·0 cites
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