Inventor · disambiguated record
Shintaro Aoyama
Also filed as: AOYAMA SHINTARO
21 granted patents·14 pending applications·317 citations·filing 1996–2018
95Inventor score
Top patents by PatentIndex Score
35 records- 0193US6467491B1Processing apparatus and processing methodTOKYO ELECTRON LTD·Filed 2000·Granted Oct 22, 2002·97 cites·7 claims
- 0286US7129185B2Substrate processing method and a computer readable storage medium storing a program for controlling sameTOKYO ELECTRON LTD·Filed 2004·Granted Oct 31, 2006·36 cites·17 claims
- 0386US6927112B2Radical processing of a sub-nanometer insulation filmTOKYO ELECTRON LTD·Filed 2002·Granted Aug 9, 2005·27 cites·47 claims
- 0486US6146135AOxide film forming methodOHMI TADAHIRO·Filed 1996·Granted Nov 14, 2000·54 cites·9 claims
- 0583US7754293B2Film forming methodTOKYO ELECTRON LTD·Filed 2006·Granted Jul 13, 2010·9 cites·19 claims
- 0679US6949478B2Oxide film forming methodOHMI TADAHIRO·Filed 2002·Granted Sep 27, 2005·13 cites·18 claims
- 0775US6866890B2Method of forming a dielectric filmTOKYO ELECTRON LTD·Filed 2001·Granted Mar 15, 2005·18 cites·30 claims
- 0875US6617207B1Method and system for forming a stacked gate insulating filmTOKYO ELECTRON LTD·Filed 2000·Granted Sep 9, 2003·21 cites·14 claims
- 0973US7497964B2Plasma igniting method and substrate processing methodTOKYO ELECTRON LTD·Filed 2006·Granted Mar 3, 2009·4 cites·6 claims
- 1067US7867920B2Method for modifying high-k dielectric thin film and semiconductor deviceTOKYO ELECTRON LTD·Filed 2006·Granted Jan 11, 2011·2 cites·20 claims
- 1162US7125799B2Method and device for processing substrate, and apparatus for manufacturing semiconductor deviceTOKYO ELECTRON LTD·Filed 2002·Granted Oct 24, 2006·8 cites·18 claims
- 1260US10612139B2Method of forming a tungsten film having a low resistanceTOKYO ELECTRON LTD·Filed 2018·Granted Apr 7, 2020·0 cites·5 claims
- 1358US2005206018A1Oxide film forming methodOHMI TADAHIRO·Filed 2005·Application pending·0 cites
- 1455US8722548B2Structures and techniques for atomic layer depositionAOYAMA SHINTARO·Filed 2010·Granted May 13, 2014·1 cites·15 claims
- 1555US2008139000A1Radical Processing of a Sub-Nanometer Insulation FilmTOKYO ELECTRON LTD·Filed 2008·Application pending·0 cites
- 1654US6730613B1Method for reducing by-product deposition in wafer processing equipmentTEXAS INSTRUMENTS INC·Filed 1999·Granted May 4, 2004·17 cites·13 claims
- 1753US10886170B2Method of forming tungsten filmTOKYO ELECTRON LTD·Filed 2018·Granted Jan 5, 2021·0 cites·9 claims
- 1851US7378358B2Method for forming insulating film on substrate, method for manufacturing semiconductor device and substrate-processing apparatusTOKYO ELECTRON LTD·Filed 2003·Granted May 27, 2008·3 cites·3 claims
- 1951US7105101B2Method of removing oxide film on a substrate with hydrogen and fluorine radicalsTOKYO ELECTRON LTD·Filed 2003·Granted Sep 12, 2006·2 cites·8 claims
- 2051US2007190802A1Method for manufacturing semiconductor device, substrate treater, and substrate treatment systemTOKYO ELECTRON LTD·Filed 2007·Application pending·0 cites
- 2150US2006207724A1Method of removing oxide film on a substrate with hydrogen and fluorine radicalsTOKYO ELECTRON LTD·Filed 2006·Application pending·0 cites
- 2249US2005170541A1Radical processing of a sub-nanometer insulation filmTOKYO ELECTRON LTD·Filed 2005·Application pending·0 cites
- 2347US9418837B2Semiconductor device manufacturing method and substrate treatment systemTOKYO ELECTRON LTD·Filed 2014·Granted Aug 16, 2016·0 cites·7 claims
- 2442US2009269494A1Film-forming apparatus, film-forming method and recording mediumTOKYO ELECTRON LTD·Filed 2006·Application pending·0 cites
- 2541US7858509B2High-dielectric film substrate processing methodTOKYO ELECTRON LTD·Filed 2007·Granted Dec 28, 2010·0 cites·5 claims
- 2641US2008242113A1Film forming method of high-k dielectric filmTOKYO ELECTRON LTD·Filed 2008·Application pending·0 cites
- 2740US6794308B2Method for reducing by-product deposition in wafer processing equipmentTEXAS INSTRUMENTS INC·Filed 2000·Granted Sep 21, 2004·0 cites·6 claims
- 2840US2008233764A1Formation of Gate Insulation FilmTAKAHASHI TSUYOSHI·Filed 2005·Application pending·0 cites
- 2939US2004023513A1Method for manufacturing semiconductor device, substrate treater, and substrate treatment systemFiled 2001·Application pending·0 cites
- 3038US2019161853A1Method for forming tungsten filmTOKYO ELECTRON LTD·Filed 2017·Application pending·0 cites
- 3138US2007141257A1Method and apparatus for forming metal silicate film, and method for manufacturing semiconductor deviceTOKYO ELECTRON LTD·Filed 2005·Application pending·0 cites
- 3238US2006174833A1Substrate treating apparatus and method of substrate treatmentTOKYO ELECTRON LTD·Filed 2003·Application pending·0 cites
- 3337US6194292B1Method of fabricating in-situ doped rough polycrystalline silicon using a single wafer reactorTEXAS INSTRUMENTS INC·Filed 1999·Granted Feb 27, 2001·5 cites·4 claims
- 3435US2004053472A1Method for film formation of gate insulator, apparatus for film formation of gate insulator, and cluster toolFiled 2001·Application pending·0 cites
- 3533US2014242808A1Semiconductor device manufacturing method and substrate processing systemAKIYAMA KOJI·Filed 2012·Application pending·0 cites
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