Inventor · disambiguated record
Timothy S. Henderson
Also filed as: HENDERSON TIMOTHY · HENDERSON TIMOTHY S
18 granted patents·1 pending application·220 citations·filing 1986–2019
94Inventor score
Files withTEXAS INSTRUMENTS INC8TRIQUINT SEMICONDUCTOR INC5QORVO US INC3HENDERSON TIMOTHY1TRIQUINT SEMICONDUCTOR TEXAS I1
Top patents by PatentIndex Score
19 records- 0190US4827320ASemiconductor device with strained InGaAs layerUNIV ILLINOIS·Filed 1986·Granted May 2, 1989·74 cites·20 claims
- 0286US9608084B2Emitter contact epitaxial structure and ohmic contact formation for heterojunction bipolar transistorTRIQUINT SEMICONDUCTOR INC·Filed 2015·Granted Mar 28, 2017·5 cites·8 claims
- 0379US5445976AMethod for producing bipolar transistor having reduced base-collector capacitanceTEXAS INSTRUMENTS INC·Filed 1994·Granted Aug 29, 1995·43 cites·14 claims
- 0477US10535784B2Dual stack varactorQORVO US INC·Filed 2018·Granted Jan 14, 2020·2 cites·18 claims
- 0576US10109623B2Dual-series varactor EPITRIQUINT SEMICONDUCTOR INC·Filed 2016·Granted Oct 23, 2018·2 cites·8 claims
- 0670US5552617ABipolar transistorTEXAS INSTRUMENTS INC·Filed 1995·Granted Sep 3, 1996·26 cites·16 claims
- 0766US9099518B1Electrostatic discharge protection deviceTRIQUINT SEMICONDUCTOR INC·Filed 2014·Granted Aug 4, 2015·2 cites·20 claims
- 0863US9231088B2Emitter contact epitaxial structure and ohmic contact formation for heterojunction bipolar transistorTRIQUINT SEMICONDUCTOR INC·Filed 2014·Granted Jan 5, 2016·1 cites·12 claims
- 0963US5569944ACompound semiconductor heterojunction bipolar transistorTEXAS INSTRUMENTS INC·Filed 1994·Granted Oct 29, 1996·24 cites·17 claims
- 1055US10833071B2Dual-series varactor EPIQORVO US INC·Filed 2018·Granted Nov 10, 2020·0 cites·8 claims
- 1152US2015325573A1Dual stack varactorTRIQUINT SEMICONDUCTOR INC·Filed 2014·Application pending·0 cites
- 1250US11282923B2Bipolar transistorQORVO US INC·Filed 2019·Granted Mar 22, 2022·0 cites·20 claims
- 1345US5455440AMethod to reduce emitter-base leakage current in bipolar transistorsTEXAS INSTRUMENTS INC·Filed 1994·Granted Oct 3, 1995·10 cites·16 claims
- 1442US5330932AMethod for fabricating GaInP/GaAs structuresTEXAS INSTRUMENTS INC·Filed 1992·Granted Jul 19, 1994·12 cites·24 claims
- 1536US6159816AMethod of fabricating a bipolar transistorTRIQUINT SEMICONDUCTOR TEXAS I·Filed 1995·Granted Dec 12, 2000·6 cites·7 claims
- 1634US5474652AMethod of dry etching InAlAs and InGaAs lattice matched to InPTEXAS INSTRUMENTS INC·Filed 1994·Granted Dec 12, 1995·5 cites·19 claims
- 1733US5362657ALateral complementary heterojunction bipolar transistor and processing procedureTEXAS INSTRUMENTS INC·Filed 1994·Granted Nov 8, 1994·6 cites·16 claims
- 1832US5616213AMethod of dry etching InAlAs and InGaAs lattice matched to InPTEXAS INSTRUMENTS INC·Filed 1995·Granted Apr 1, 1997·2 cites·10 claims
- 1931US8193609B2Heterojunction bipolar transistor device with electrostatic discharge ruggednessHENDERSON TIMOTHY·Filed 2008·Granted Jun 5, 2012·0 cites·12 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →