Inventor · disambiguated record
Masataka Higashiwaki
Also filed as: HIGASHIWAKI MASATAKA
13 granted patents·7 pending applications·53 citations·filing 2005–2018
89Inventor score
Top patents by PatentIndex Score
20 records- 0193US10249767B2Ga2O3-based semiconductor elementTAMURA SEISAKUSHO KK·Filed 2016·Granted Apr 2, 2019·9 cites·19 claims
- 0292US9461124B2Ga2O3 semiconductor elementSASAKI KOHEI·Filed 2012·Granted Oct 4, 2016·15 cites·14 claims
- 0390US9437689B2Ga2O3 semiconductor elementSASAKI KOHEI·Filed 2012·Granted Sep 6, 2016·10 cites·17 claims
- 0484US10230007B2Semiconductor element, method for manufacturing same, semiconductor substrate, and crystal laminate structureTAMURA SEISAKUSHO KK·Filed 2015·Granted Mar 12, 2019·4 cites·7 claims
- 0583US9245749B2Method of forming Ga2O3-based crystal film and crystal multilayer structureTAMURA SEISAKUSHO KK·Filed 2014·Granted Jan 26, 2016·5 cites·4 claims
- 0674US10861945B2Semiconductor element and crystalline laminate structureTAMURA SEISAKUSHO KK·Filed 2015·Granted Dec 8, 2020·2 cites·7 claims
- 0772US7547911B2Gan-based field effect transistor and production method thereforNAT INST INF & COMM TECH·Filed 2005·Granted Jun 16, 2009·5 cites·6 claims
- 0870US11081598B2Trench MOS Schottky diodeTAMURA SEISAKUSHO KK·Filed 2018·Granted Aug 3, 2021·1 cites·12 claims
- 0967US10199512B2High voltage withstand Ga2O3-based single crystal schottky barrier diodeTAMURA SEISAKUSHO KK·Filed 2016·Granted Feb 5, 2019·1 cites·12 claims
- 1065US11563092B2GA2O3-based semiconductor deviceNAT INST INF & COMM TECH·Filed 2018·Granted Jan 24, 2023·1 cites·2 claims
- 1156US2018350967A1Ga2O3 SEMICONDUCTOR ELEMENTTAMURA SEISAKUSHO KK·Filed 2018·Application pending·0 cites
- 1251US2016365418A1Ga2O3 SEMICONDUCTOR ELEMENTTAMURA SEISAKUSHO KK·Filed 2016·Application pending·0 cites
- 1349US9611567B2Method for controlling donor concentration in Ga2O3-based and method for forming ohmic contactTAMURA SEISAKUSHO KK·Filed 2014·Granted Apr 4, 2017·0 cites·20 claims
- 1445US11264241B2Semiconductor substrate, semiconductor element and method for producing semiconductor substrateTAMURA SEISAKUSHO KK·Filed 2018·Granted Mar 1, 2022·0 cites·7 claims
- 1545US10825935B2Trench MOS-type Schottky diodeTAMURA SEISAKUSHO KK·Filed 2017·Granted Nov 3, 2020·0 cites·10 claims
- 1641US2016141372A1Ga2O3 SEMICONDUCTOR ELEMENTTAMURA SEISAKUSHO KK·Filed 2014·Application pending·0 cites
- 1740US2014217470A1Ga2O3 SEMICONDUCTOR ELEMENTUNIV KYOTO·Filed 2012·Application pending·0 cites
- 1839US2014217471A1Ga2O3 SEMICONDUCTOR ELEMENTSASAKI KOHEI·Filed 2012·Application pending·0 cites
- 1934US2016042949A1METHOD OF FORMING HIGH-RESISTIVITY REGION IN Ga2O3-BASED SINGLE CRYSTAL, AND CRYSTAL LAMINATE STRUCTURE AND SEMICONDUCTOR ELEMENTTAMURA SEISAKUSHO KK·Filed 2015·Application pending·0 cites
- 2033US2017288061A1Semiconductor element and production method for sameTAMURA SEISAKUSHO KK·Filed 2015·Application pending·0 cites
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