Inventor · disambiguated record
Tadakatsu Ohkubo
Also filed as: OHKUBO TADAKATSU
12 granted patents·5 pending applications·21 citations·filing 2011–2024
85Inventor score
Top patents by PatentIndex Score
17 records- 0190US9842636B2Perpendicular magnetization film, perpendicular magnetization film structure, magnetoresistance element, and perpendicular magnetic recording mediumNAT INST MATERIALS SCIENCE·Filed 2016·Granted Dec 12, 2017·5 cites·12 claims
- 0287US11915920B2Emitter, electron gun in which same is used, electronic device in which same is used, and method for manufacturing sameNAT INST MATERIALS SCIENCE·Filed 2020·Granted Feb 27, 2024·2 cites·21 claims
- 0385US10305027B2Magnetoresistive element and magnetic memory deviceTOSHIBA KK·Filed 2017·Granted May 28, 2019·5 cites·18 claims
- 0482US11004465B2Magneto-resistance element in which I-III-VI2 compound semiconductor is used, method for manufacturing said magneto-resistance element, and magnetic storage device and spin transistor in which said magneto-resistance element is usedNAT INST MATERIALS SCIENCE·Filed 2017·Granted May 11, 2021·5 cites·7 claims
- 0575US8872291B2Ferromagnetic tunnel junction structure and magnetoresistive effect device and spintronics device utilizing sameNAT INST FOR MATERIALS SCIENCE·Filed 2012·Granted Oct 28, 2014·4 cites·6 claims
- 0665US10665776B2Magnetoresistance effect element and method for manufacturing the sameTDK CORP·Filed 2019·Granted May 26, 2020·0 cites·16 claims
- 0762US2025054664A1HOT-DEFORMED R-Fe-B MAGNET FOR VARIABLE-MAGNETIC-FORCE MOTOR, VARIABLE-MAGNETIC-FORCE MOTOR, AND ELECTRONIC DEVICE FOR VEHICLE AND HOUSEHOLDNAT INST MATERIALS SCIENCE·Filed 2022·Application pending·0 cites
- 0859US11585873B2Magnetoresistive effect element containing two non-magnetic layers with different crystal structuresTDK CORP·Filed 2021·Granted Feb 21, 2023·0 cites·12 claims
- 0959US2025212473A1Nitride semiconductor device and method of manufacturing the sameFUJI ELECTRIC CO LTD·Filed 2024·Application pending·0 cites
- 1056US10832719B2Underlayer for perpendicularly magnetized film, perpendicularly magnetized film structure, perpendicular MTJ element, and perpendicular magnetic recording medium using the sameNAT INST MATERIALS SCIENCE·Filed 2018·Granted Nov 10, 2020·0 cites·15 claims
- 1155US12293893B2Electron source, manufacturing method therefor, and device comprising electron sourceDENKA COMPANY LTD·Filed 2022·Granted May 6, 2025·0 cites·9 claims
- 1253US10199063B2Underlayer for perpendicularly magnetized film, perpendicularly magnetized film structure, perpendicular MTJ element, and perpendicular magnetic recording medium using the sameNAT INST MATERIALS SCIENCE·Filed 2015·Granted Feb 5, 2019·0 cites·8 claims
- 1346US2023066150A1Rare-earth magnetLG ELECTRONICS INC·Filed 2020·Application pending·0 cites
- 1445US11133459B2Magnetic element, magnetic memory device, and magnetic sensorAIST·Filed 2018·Granted Sep 28, 2021·0 cites·13 claims
- 1544US11105867B2Magnetic tunnel junction, magnetoresistive element and spintronics device in which said magnetic tunnel junction is used, and method of manufacturing magnetic tunnel junctionNAT INST MATERIALS SCIENCE·Filed 2017·Granted Aug 31, 2021·0 cites·10 claims
- 1643US2023049280A1Nanocrystalline soft magnetic alloyTOHOKU MAGNET INST CO LTD·Filed 2020·Application pending·0 cites
- 1741US2013068992A1Method for producing rare earth permanent magnets, and rare earth permanent magnetsHONO KAZUHIRO·Filed 2011·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →