Inventor · disambiguated record
Robert R. Robison
Also filed as: RANKIN JED H · RANKIN JR JED H · ROBISON ROBERT · ROBISON ROBERT R
146 granted patents·18 pending applications·366 citations·filing 2008–2024
99Inventor score
Top patents by PatentIndex Score
164 records- 0198US9859421B1Vertical field effect transistor with subway etch replacement metal gateIBM·Filed 2016·Granted Jan 2, 2018·25 cites·10 claims
- 0297US11152257B2Barrier-less prefilled via formationIBM·Filed 2020·Granted Oct 19, 2021·5 cites·18 claims
- 0397US10170584B2Nanosheet field effect transistors with partial inside spacersIBM·Filed 2017·Granted Jan 1, 2019·11 cites·14 claims
- 0497US9728466B1Vertical field effect transistors with metallic source/drain regionsIBM·Filed 2016·Granted Aug 8, 2017·24 cites·14 claims
- 0596US11380836B2Topological qubit deviceIBM·Filed 2020·Granted Jul 5, 2022·5 cites·20 claims
- 0696US10096607B1Three-dimensional stacked junctionless channels for dense SRAMIBM·Filed 2017·Granted Oct 9, 2018·14 cites·20 claims
- 0796US9318622B1Fin-type PIN diode arrayIBM·Filed 2015·Granted Apr 19, 2016·15 cites·20 claims
- 0895US11894265B2Top via with damascene line and viaIBM·Filed 2021·Granted Feb 6, 2024·2 cites·19 claims
- 0995US9917196B1Semiconductor device and method of forming the semiconductor deviceIBM·Filed 2016·Granted Mar 13, 2018·8 cites·8 claims
- 1095US9911804B1Vertical fin field effect transistor with air gap spacersIBM·Filed 2016·Granted Mar 6, 2018·8 cites·6 claims
- 1195US9530798B1High performance heat shields with reduced capacitanceGLOBALFOUNDRIES INC·Filed 2015·Granted Dec 27, 2016·16 cites·15 claims
- 1294US11276639B2Conductive lines with subtractive cutsIBM·Filed 2020·Granted Mar 15, 2022·3 cites·18 claims
- 1394US11195795B1Well-controlled edge-to-edge spacing between adjacent interconnectsIBM·Filed 2020·Granted Dec 7, 2021·3 cites·20 claims
- 1494US10381437B2Semiconductor device and method of forming the semiconductor deviceIBM·Filed 2017·Granted Aug 13, 2019·6 cites·11 claims
- 1593US11239316B2Semiconductor device and method of forming the semiconductor deviceIBM·Filed 2019·Granted Feb 1, 2022·4 cites·20 claims
- 1693US10249739B2Nanosheet MOSFET with partial release and source/drain epitaxyIBM·Filed 2017·Granted Apr 2, 2019·9 cites·18 claims
- 1792US11127815B2Semiconductor device and method of forming the semiconductor deviceIBM·Filed 2019·Granted Sep 21, 2021·4 cites·20 claims
- 1891US10128347B2Gate-all-around field effect transistor having multiple threshold voltagesIBM·Filed 2017·Granted Nov 13, 2018·6 cites·14 claims
- 1991US9466693B1Self aligned replacement metal source/drain finFETIBM·Filed 2015·Granted Oct 11, 2016·5 cites·17 claims
- 2090US8685817B1Metal gate structures for CMOS transistor devices having reduced parasitic capacitanceIBM·Filed 2012·Granted Apr 1, 2014·10 cites·11 claims
- 2189US11189568B2Top via interconnect having a line with a reduced bottom dimensionIBM·Filed 2020·Granted Nov 30, 2021·2 cites·4 claims
- 2289US11171084B2Top via with next level line selective growthIBM·Filed 2020·Granted Nov 9, 2021·2 cites·14 claims
- 2389US9059203B2Semiconductor-on-insulator (SOI) structure with selectivity placed sub-insulator layer void(s) and method of forming the SOI structureIBM·Filed 2013·Granted Jun 16, 2015·7 cites·14 claims
- 2489US8361872B2High performance low power bulk FET device and method of manufactureIBM·Filed 2010·Granted Jan 29, 2013·8 cites·19 claims
- 2588US11195792B2Top via stackIBM·Filed 2020·Granted Dec 7, 2021·2 cites·20 claims
- 2688US9240406B2Precision trench capacitorGLOBALFOUNDRIES INC·Filed 2014·Granted Jan 19, 2016·9 cites·20 claims
- 2788US8815669B2Metal gate structures for CMOS transistor devices having reduced parasitic capacitanceIBM·Filed 2013·Granted Aug 26, 2014·8 cites·5 claims
- 2887US10998193B1Spacer-assisted lithographic double patterningIBM·Filed 2020·Granted May 4, 2021·2 cites·17 claims
- 2987US10340340B2Multiple-threshold nanosheet transistorsIBM·Filed 2016·Granted Jul 2, 2019·3 cites·2 claims
- 3087US10170485B2Three-dimensional stacked junctionless channels for dense SRAMIBM·Filed 2018·Granted Jan 1, 2019·4 cites·20 claims
- 3187US9847416B1Performance-enhanced vertical device and method of forming thereofGLOBALFOUNDRIES INC·Filed 2016·Granted Dec 19, 2017·5 cites·20 claims
- 3286US10418450B2Self aligned replacement metal source/drain finFETIBM·Filed 2016·Granted Sep 17, 2019·3 cites·2 claims
- 3386US8610211B2Semiconductor-on-insulator (SOI) structure with selectively placed sub-insulator layer void(s) and method of forming the SOI structureFURUKAWA TOSHIHARU·Filed 2010·Granted Dec 17, 2013·6 cites·20 claims
- 3486US2025142872A1Self aligned replacement metal source/drain finfetTESSERA LLC·Filed 2024·Application pending·0 cites
- 3585US11342446B2Nanosheet field effect transistors with partial inside spacersTESSERA INC·Filed 2019·Granted May 24, 2022·2 cites·20 claims
- 3685US11056391B2Subtractive vFET process flow with replacement metal gate and metallic source/drainIBM·Filed 2016·Granted Jul 6, 2021·4 cites·3 claims
- 3785US10586854B2Gate-all-around field effect transistor having multiple threshold voltagesIBM·Filed 2018·Granted Mar 10, 2020·2 cites·19 claims
- 3884US8686508B2Structures, methods and applications for electrical pulse anneal processesABOU-KHALIL MICHEL J·Filed 2009·Granted Apr 1, 2014·5 cites·9 claims
- 3983US10559670B2Nanosheet field effect transistors with partial inside spacersIBM·Filed 2017·Granted Feb 11, 2020·2 cites·20 claims
- 4083US8741725B2Butted SOI junction isolation structures and devices and method of fabricationJOHNSON JEFFREY B·Filed 2010·Granted Jun 3, 2014·6 cites·22 claims
- 4182US11682617B2High aspect ratio vias for integrated circuitsIBM·Filed 2020·Granted Jun 20, 2023·1 cites·20 claims
- 4282US9859384B2Vertical field effect transistors with metallic source/drain regionsIBM·Filed 2017·Granted Jan 2, 2018·3 cites·14 claims
- 4381US11289371B2Top vias with selectively retained etch stopsIBM·Filed 2020·Granted Mar 29, 2022·1 cites·20 claims
- 4481US10056382B2Modulating transistor performanceIBM·Filed 2016·Granted Aug 21, 2018·3 cites·18 claims
- 4581US9935106B2Multi-finger devices in mutliple-gate-contacted-pitch, integrated structuresGLOBALFOUNDRIES INC·Filed 2016·Granted Apr 3, 2018·3 cites·20 claims
- 4680US11152464B1Self-aligned isolation for nanosheet transistorIBM·Filed 2020·Granted Oct 19, 2021·1 cites·14 claims
- 4779US11869937B2Semiconductor device and method of forming the semiconductor deviceIBM·Filed 2022·Granted Jan 9, 2024·0 cites·17 claims
- 4879US8110483B2Forming an extremely thin semiconductor-on-insulator (ETSOI) layerABADEER WAGDI W·Filed 2009·Granted Feb 7, 2012·7 cites·8 claims
- 4978US11139201B2Top via with hybrid metallizationIBM·Filed 2019·Granted Oct 5, 2021·2 cites·19 claims
- 5078US10170543B2Vertical fin field effect transistor with air gap spacersIBM·Filed 2017·Granted Jan 1, 2019·1 cites·20 claims
Showing the top 50 of 164 patent records by PatentIndex Score.
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