Inventor · disambiguated record
Katja Huy
Also filed as: HUY KATJA
8 granted patents·1 pending application·53 citations·filing 2004–2013
84Inventor score
Top patents by PatentIndex Score
9 records- 0177US7326646B2Nitrogen-free ARC layer and a method of manufacturing the sameADVANCED MICRO DEVICES INC·Filed 2005·Granted Feb 5, 2008·6 cites·27 claims
- 0273US8084088B2Method of improving the wafer-to-wafer thickness uniformity of silicon nitride layersHUY KATJA·Filed 2004·Granted Dec 27, 2011·20 cites·24 claims
- 0369US7442638B2Method for forming a tungsten interconnect structure with enhanced sidewall coverage of the barrier layerADVANCED MICRO DEVICES INC·Filed 2006·Granted Oct 28, 2008·4 cites·16 claims
- 0464US7109086B2Technique for forming a spacer for a line element by using an etch stop layer deposited by a highly directional deposition techniqueADVANCED MICRO DEVICES INC·Filed 2004·Granted Sep 19, 2006·11 cites·27 claims
- 0560US7005358B2Technique for forming recessed sidewall spacers for a polysilicon lineADVANCED MICRO DEVICES INC·Filed 2004·Granted Feb 28, 2006·9 cites·33 claims
- 0654US8847205B2Spacer for a gate electrode having tensile stress and a method of forming the sameGLOBALFOUNDRIES INC·Filed 2013·Granted Sep 30, 2014·0 cites·21 claims
- 0751US8557667B2Spacer for a gate electrode having tensile stress and a method of forming the sameRUELKE HARTMUT·Filed 2004·Granted Oct 15, 2013·3 cites·15 claims
- 0842US2007096221A1Semiconductor device comprising copper-based contact plug and a method of forming the sameFROHBERG KAI·Filed 2006·Application pending·0 cites
- 0938US7807233B2Method of forming a TEOS cap layer at low temperature and reduced deposition rateGLOBALFOUNDRIES INC·Filed 2004·Granted Oct 5, 2010·0 cites·24 claims
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