Inventor · disambiguated record
Larry Zhao
Also filed as: ZHAO LARRY · ZHAO LARRY L
28 granted patents·5 pending applications·338 citations·filing 2000–2019
96Inventor score
Files withGLOBALFOUNDRIES INC18ADVANCED MICRO DEVICES INC8LAM RES CORP4LIN SEAN X2GLOBAL FOUNDRIES INC1
Top patents by PatentIndex Score
33 records- 0195US9159610B2Hybrid manganese and manganese nitride barriers for back-end-of-line metallization and methods for fabricating the sameGLOBALFOUNDRIES INC·Filed 2013·Granted Oct 13, 2015·22 cites·20 claims
- 0293US10262943B2Interlevel conductor pre-fill utilizing selective barrier depositionLAM RES CORP·Filed 2018·Granted Apr 16, 2019·7 cites·19 claims
- 0393US9583386B2Interlevel conductor pre-fill utilizing selective barrier depositionLAM RES CORP·Filed 2015·Granted Feb 28, 2017·8 cites·21 claims
- 0493US9287183B1Using electroless deposition as a metrology tool to highlight contamination, residue, and incomplete via etchLAM RES CORP·Filed 2015·Granted Mar 15, 2016·11 cites·17 claims
- 0592US9431294B2Methods of producing integrated circuits with an air gapGLOBALFOUNDRIES INC·Filed 2014·Granted Aug 30, 2016·14 cites·19 claims
- 0692US6429128B1Method of forming nitride capped Cu lines with reduced electromigration along the Cu/nitride interfaceADVANCED MICRO DEVICES INC·Filed 2001·Granted Aug 6, 2002·63 cites·20 claims
- 0791US9070711B2Methods of forming cap layers for semiconductor devices with self-aligned contact elements and the resulting devicesGLOBALFOUNDRIES INC·Filed 2013·Granted Jun 30, 2015·10 cites·23 claims
- 0891US6261963B1Reverse electroplating of barrier metal layer to improve electromigration performance in copper interconnect devicesADVANCED MICRO DEVICES INC·Filed 2000·Granted Jul 17, 2001·62 cites·40 claims
- 0989US8753975B1Methods of forming conductive copper-based structures using a copper-based nitride seed layer without a barrier layer and the resulting deviceGLOBALFOUNDRIES INC·Filed 2013·Granted Jun 17, 2014·10 cites·21 claims
- 1089US8517769B1Methods of forming copper-based conductive structures on an integrated circuit deviceLIN SEAN X·Filed 2012·Granted Aug 27, 2013·14 cites·41 claims
- 1187US9362228B2Electro-migration enhancing method for self-forming barrier process in copper metalizationGLOBALFOUNDRIES INC·Filed 2013·Granted Jun 7, 2016·7 cites·13 claims
- 1287US8907483B2Semiconductor device having a self-forming barrier layer at via bottomGLOBALFOUNDRIES INC·Filed 2012·Granted Dec 9, 2014·7 cites·19 claims
- 1383US6633085B1Method of selectively alloying interconnect regions by ion implantationADVANCED MICRO DEVICES INC·Filed 2001·Granted Oct 14, 2003·37 cites·20 claims
- 1482US6600333B1Method and test structure for characterizing sidewall damage in a semiconductor deviceADVANCED MICRO DEVICES INC·Filed 2000·Granted Jul 29, 2003·28 cites·10 claims
- 1581US9875968B2Interlevel conductor pre-fill utilizing selective barrier depositionLAM RES CORP·Filed 2017·Granted Jan 23, 2018·2 cites·19 claims
- 1677US9087881B2Electroless fill of trench in semiconductor structureGLOBALFOUNDRIES INC·Filed 2013·Granted Jul 21, 2015·4 cites·12 claims
- 1776US9054052B2Methods for integration of pore stuffing materialGLOBALFOUNDRIES INC·Filed 2013·Granted Jun 9, 2015·3 cites·17 claims
- 1869US6897144B1Cu capping layer deposition with improved integrated circuit reliabilityADVANCED MICRO DEVICES INC·Filed 2002·Granted May 24, 2005·15 cites·14 claims
- 1964US9236299B2Methods of forming a metal cap layer on copper-based conductive structures on an integrated circuit deviceGLOBALFOUNDRIES INC·Filed 2014·Granted Jan 12, 2016·1 cites·25 claims
- 2064US8859419B2Methods of forming copper-based nitride liner/passivation layers for conductive copper structures and the resulting deviceGLOBALFOUNDRIES INC·Filed 2013·Granted Oct 14, 2014·1 cites·15 claims
- 2164US8673766B2Methods of forming copper-based conductive structures by forming a copper-based seed layer having an as-deposited thickness profile and thereafter performing an etching process and electroless copper depositionLIN SEAN X·Filed 2012·Granted Mar 18, 2014·2 cites·18 claims
- 2262USRE49820ESemiconductor device having a self-forming barrier layer at via bottomGLOBALFOUNDRIES INC·Filed 2019·Granted Jan 30, 2024·0 cites·39 claims
- 2362US6656834B1Method of selectively alloying interconnect regions by deposition processADVANCED MICRO DEVICES INC·Filed 2001·Granted Dec 2, 2003·10 cites·11 claims
- 2456US9318436B2Copper based nitride liner passivation layers for conductive copper structuresGLOBALFOUNDRIES INC·Filed 2014·Granted Apr 19, 2016·0 cites·10 claims
- 2555USRE47630ESemiconductor device having a self-forming barrier layer at via bottomGLOBALFOUNDRIES INC·Filed 2016·Granted Oct 1, 2019·0 cites·19 claims
- 2652US9666524B2Electro-migration enhancing method for self-forming barrier process in copper mettalizationGLOBALFOUNDRIES INC·Filed 2016·Granted May 30, 2017·0 cites·20 claims
- 2749US9484252B2Integrated circuits including selectively deposited metal capping layers on copper lines and methods for fabricating the sameGLOBAL FOUNDRIES INC·Filed 2014·Granted Nov 1, 2016·0 cites·19 claims
- 2845US2015243604A1Cap layers for semiconductor devices with self-aligned contact elementsGLOBALFOUNDRIES INC·Filed 2015·Application pending·0 cites
- 2943US2015228585A1Self-forming barrier integrated with self-aligned capGLOBALFOUNDRIES INC·Filed 2014·Application pending·0 cites
- 3042US2014145332A1Methods of forming graphene liners and/or cap layers on copper-based conductive structuresGLOBALFOUNDRIES INC·Filed 2012·Application pending·0 cites
- 3142US2014353805A1Methods of semiconductor contaminant removal using supercritical fluidGLOBALFOUNDRIES INC·Filed 2013·Application pending·0 cites
- 3239US7381660B2Dielectric barrier layer for a copper metallization layer having a varying silicon concentration along its thicknessADVANCED MICRO DEVICES INC·Filed 2003·Granted Jun 3, 2008·0 cites·18 claims
- 3338US2004061237A1Method of reducing voiding in copper interconnects with copper alloys in the seed layerADVANCED MICRO DEVICES INC·Filed 2002·Application pending·0 cites
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →