Inventor · disambiguated record
Mahito Sawada
Also filed as: SAWADA MAHITO
12 granted patents·5 pending applications·91 citations·filing 1999–2015
90Inventor score
Files withRENESAS TECH CORP7MITSUBISHI ELECTRIC CORP4RENESAS ELECTRONICS CORP4RYODEN SEMICONDUCTOR SYST ENG1YAMAGUCHI TADASHI1
Top patents by PatentIndex Score
17 records- 0183US8384187B2Semiconductor device with shallow trench isolationRENESAS ELECTRONICS CORP·Filed 2010·Granted Feb 26, 2013·6 cites·8 claims
- 0283US6579787B2Semiconductor device with a fluorinated silicate glass film as an interlayer metal dielectric film, and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Jun 17, 2003·29 cites·10 claims
- 0368US7875539B2Semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2008·Granted Jan 25, 2011·3 cites·19 claims
- 0466US6645859B1Semiconductor device and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 2002·Granted Nov 11, 2003·11 cites·6 claims
- 0562US8084343B2Semiconductor deviceYAMAGUCHI TADASHI·Filed 2010·Granted Dec 27, 2011·1 cites·20 claims
- 0661US7154184B2Interconnection structure of semiconductor deviceRENESAS TECH CORP·Filed 2003·Granted Dec 26, 2006·9 cites·5 claims
- 0758US6544904B1Method of manufacturing semiconductor deviceRYODEN SEMICONDUCTOR SYST ENG·Filed 2002·Granted Apr 8, 2003·7 cites·9 claims
- 0855US6213852B1Polishing apparatus and method of manufacturing a semiconductor device using the sameMITSUBISHI ELECTRIC CORP·Filed 1999·Granted Apr 10, 2001·20 cites·7 claims
- 0953US7012336B2Semiconductor device with a fluorinated silicate glass film as an interlayer metal dielectric film, and manufacturing method thereofRENESAS TECH CORP·Filed 2003·Granted Mar 14, 2006·4 cites·7 claims
- 1052US9029237B2Semiconductor device and method of manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2013·Granted May 12, 2015·0 cites·6 claims
- 1149US7489040B2Interconnection structure of semiconductor deviceRENESAS TECH CORP·Filed 2006·Granted Feb 10, 2009·0 cites·4 claims
- 1249US2015221722A1Semiconductor device with shallow trench isolationRENESAS ELECTRONICS CORP·Filed 2015·Application pending·0 cites
- 1347US2006081992A1Semiconductor device with a fluorinated silicate glass film as an interlayer metal dielectric film, and manufacturing method thereofRENESAS TECH CORP·Filed 2005·Application pending·0 cites
- 1446US2006091451A1Semiconductor deviceRENESAS TECH CORP·Filed 2005·Application pending·0 cites
- 1542US6759317B2Method of manufacturing semiconductor device having passivation film and buffer coating filmRENESAS TECH CORP·Filed 2001·Granted Jul 6, 2004·1 cites·5 claims
- 1640US2007049046A1Oxide film filled structure, oxide film filling method, semiconductor device and manufacturing method thereofRENESAS TECH CORP·Filed 2006·Application pending·0 cites
- 1735US2004016987A1Semiconductor device with insulator and manufacturing method thereforMITSUBISHI ELECTRIC CORP·Filed 2003·Application pending·0 cites
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