Inventor · disambiguated record
Witold P. Maszara
Also filed as: MASZARA WITOLD · MASZARA WITOLD P
60 granted patents·4 pending applications·1,899 citations·filing 1991–2016
99Inventor score
Files withADVANCED MICRO DEVICES INC39GLOBALFOUNDRIES INC11MASZARA WITOLD5MASZARA WITOLD P3ALLIED SIGNAL INC2
Top patents by PatentIndex Score
64 records- 0198US6680240B1Silicon-on-insulator device with strained device film and method for making the same with partial replacement of isolation oxideADVANCED MICRO DEVICES INC·Filed 2002·Granted Jan 20, 2004·216 cites·8 claims
- 0296US9362405B1Channel cladding last process flow for forming a channel region on a FinFET deviceGLOBALFOUNDRIES INC·Filed 2014·Granted Jun 7, 2016·20 cites·19 claims
- 0396US7078299B2Formation of finFET using a sidewall epitaxial layerADVANCED MICRO DEVICES INC·Filed 2003·Granted Jul 18, 2006·118 cites·11 claims
- 0496US6060364AFast Mosfet with low-doped source/drainADVANCED MICRO DEVICES INC·Filed 1999·Granted May 9, 2000·143 cites·17 claims
- 0595US8466034B2Method of manufacturing a finned semiconductor device structureMASZARA WITOLD·Filed 2010·Granted Jun 18, 2013·27 cites·19 claims
- 0694US8673718B2Methods of forming FinFET devices with alternative channel materialsMASZARA WITOLD P·Filed 2012·Granted Mar 18, 2014·27 cites·16 claims
- 0794US6955969B2Method of growing as a channel region to reduce source/drain junction capacitanceADVANCED MICRO DEVICES INC·Filed 2003·Granted Oct 18, 2005·89 cites·16 claims
- 0894US6630720B1Asymmetric semiconductor device having dual work function gate and method of fabricationADVANCED MICRO DEVICES INC·Filed 2001·Granted Oct 7, 2003·75 cites·21 claims
- 0994US6586808B1Semiconductor device having multi-work function gate electrode and multi-segment gate dielectricADVANCED MICRO DEVICES INC·Filed 2002·Granted Jul 1, 2003·86 cites·9 claims
- 1093US8828839B2Methods for fabricating electrically-isolated finFET semiconductor devicesGLOBALFOUNDRIES INC·Filed 2013·Granted Sep 9, 2014·15 cites·20 claims
- 1193US6184112B1Method of forming a MOSFET transistor with a shallow abrupt retrograde dopant profileADVANCED MICRO DEVICES INC·Filed 1998·Granted Feb 6, 2001·136 cites·9 claims
- 1292US8716074B2Methods for forming isolated fin structures on bulk semiconductor materialMASZARA WITOLD·Filed 2012·Granted May 6, 2014·15 cites·15 claims
- 1392US8580642B1Methods of forming FinFET devices with alternative channel materialsMASZARA WITOLD P·Filed 2012·Granted Nov 12, 2013·19 cites·21 claims
- 1492US6815297B1Ultra-thin fully depleted SOI device and method of fabricationADVANCED MICRO DEVICES INC·Filed 2002·Granted Nov 9, 2004·63 cites·11 claims
- 1591US7871873B2Method of forming fin structures using a sacrificial etch stop layer on bulk semiconductor materialGLOBAL FOUNDRIES INC·Filed 2009·Granted Jan 18, 2011·23 cites·19 claims
- 1690US9412822B2Methods of forming stressed channel regions for a FinFET semiconductor device and the resulting deviceGLOBALFOUNDRIES INC·Filed 2014·Granted Aug 9, 2016·9 cites·22 claims
- 1790US8101486B2Methods for forming isolated fin structures on bulk semiconductor materialMASZARA WITOLD·Filed 2009·Granted Jan 24, 2012·17 cites·4 claims
- 1890US6444534B1SOI semiconductor device opening implantation gettering methodADVANCED MICRO DEVICES INC·Filed 2001·Granted Sep 3, 2002·52 cites·24 claims
- 1989US6599831B1Metal gate electrode using silicidation and method of formation thereofADVANCED MICRO DEVICES INC·Filed 2002·Granted Jul 29, 2003·40 cites·23 claims
- 2089US6245636B1Method of formation of pseudo-SOI structures with direct contact of transistor body to the substrateADVANCED MICRO DEVICES INC·Filed 1999·Granted Jun 12, 2001·105 cites·23 claims
- 2188US8859389B2Methods of making fins and fin field effect transistors (FinFETs)KAWASAKI HIROHISA·Filed 2011·Granted Oct 14, 2014·20 cites·15 claims
- 2288US6204138B1Method for fabricating a MOSFET device structure which facilitates mitigation of junction capacitance and floating body effectsADVANCED MICRO DEVICES INC·Filed 1999·Granted Mar 20, 2001·71 cites·19 claims
- 2386US9564367B2Methods of forming different FinFET devices with different threshold voltages and integrated circuit products containing such devicesJACOB AJEY P·Filed 2012·Granted Feb 7, 2017·8 cites·14 claims
- 2485US7306998B2Formation of abrupt junctions in devices by using silicide growth dopant snowplow effectADVANCED MICRO DEVICES INC·Filed 2006·Granted Dec 11, 2007·10 cites·12 claims
- 2584US6812550B1Wafer pattern variation of integrated circuit fabricationADVANCED MICRO DEVICES INC·Filed 2003·Granted Nov 2, 2004·27 cites·20 claims
- 2684US6238960B1Fast MOSFET with low-doped source/drainADVANCED MICRO DEVICES INC·Filed 2000·Granted May 29, 2001·29 cites·8 claims
- 2783US6399452B1Method of fabricating transistors with low thermal budgetADVANCED MICRO DEVICES INC·Filed 2000·Granted Jun 4, 2002·28 cites·11 claims
- 2882US6495887B1Argon implantation after silicidation for improved floating-body effectsADVANCED MICRO DEVICES INC·Filed 2000·Granted Dec 17, 2002·26 cites·18 claims
- 2982US5965917AStructure and method of formation of body contacts in SOI MOSFETS to elimate floating body effectsADVANCED MICRO DEVICES INC·Filed 1999·Granted Oct 12, 1999·66 cites·9 claims
- 3081US6492209B1Selectively thin silicon film for creating fully and partially depleted SOI on same waferADVANCED MICRO DEVICES INC·Filed 2000·Granted Dec 10, 2002·28 cites·14 claims
- 3181US6429054B1Method of fabricating semiconductor-on-insulator (SOI) device with hyperabrupt source/drain junctionsADVANCED MICRO DEVICES INC·Filed 2001·Granted Aug 6, 2002·25 cites·12 claims
- 3280US7306997B2Strained fully depleted silicon on insulator semiconductor device and manufacturing method thereforADVANCED MICRO DEVICES INC·Filed 2004·Granted Dec 11, 2007·23 cites·8 claims
- 3378US9214553B2Methods of forming stressed channel regions for a FinFET semiconductor device and the resulting deviceGLOBALFOUNDRIES INC·Filed 2014·Granted Dec 15, 2015·3 cites·10 claims
- 3478US6506654B1Source-side stacking fault body-tie for partially-depleted SOI MOSFET hysteresis controlADVANCED MICRO DEVICES INC·Filed 2002·Granted Jan 14, 2003·22 cites·11 claims
- 3575US6465847B1Semiconductor-on-insulator (SOI) device with hyperabrupt source/drain junctionsADVANCED MICRO DEVICES INC·Filed 2001·Granted Oct 15, 2002·20 cites·17 claims
- 3673US9240342B2Methods of forming replacement fins for a FinFET semiconductor device by performing a replacement growth processGLOBALFOUNDRIES INC·Filed 2013·Granted Jan 19, 2016·2 cites·12 claims
- 3773US6486038B1Method for and device having STI using partial etch trench bottom linerADVANCED MICRO DEVICES INC·Filed 2001·Granted Nov 26, 2002·19 cites·20 claims
- 3872US6362063B1Formation of low thermal budget shallow abrupt junctions for semiconductor devicesADVANCED MICRO DEVICES INC·Filed 1999·Granted Mar 26, 2002·41 cites·12 claims
- 3971US7081655B2Formation of abrupt junctions in devices by using silicide growth dopant snowplow effectADVANCED MICRO DEVICES INC·Filed 2003·Granted Jul 25, 2006·13 cites·8 claims
- 4071US7033916B1Shallow junction semiconductor and method for the fabrication thereofADVANCED MICRO DEVICES INC·Filed 2004·Granted Apr 25, 2006·13 cites·14 claims
- 4171US5250454AMethod for forming thickened source/drain contact regions for field effect transistorsALLIED SIGNAL INC·Filed 1992·Granted Oct 5, 1993·30 cites·15 claims
- 4270US9508853B2Channel cladding last process flow for forming a channel region on a FinFET device having a reduced size fin in the channel regionGLOBALFOUNDRIES INC·Filed 2016·Granted Nov 29, 2016·1 cites·18 claims
- 4369US8334177B2Methods for forming isolated fin structures on bulk semiconductor materialMASZARA WITOLD·Filed 2011·Granted Dec 18, 2012·2 cites·15 claims
- 4469US6541821B1SOI device with source/drain extensions and adjacent shallow pocketsADVANCED MICRO DEVICES INC·Filed 2000·Granted Apr 1, 2003·14 cites·11 claims
- 4568US9614058B2Methods of forming low defect replacement fins for a FinFET semiconductor device and the resulting devicesGLOBALFOUNDRIES INC·Filed 2015·Granted Apr 4, 2017·1 cites·18 claims
- 4665US9460924B2Semiconductor device having structure with fractional dimension of the minimum dimension of a lithography systemMASZARA WITOLD P·Filed 2007·Granted Oct 4, 2016·2 cites·6 claims
- 4763US8084330B2Thin body semiconductor devices having improved contact resistance and methods for the fabrication thereofMASZARA WITOLD·Filed 2009·Granted Dec 27, 2011·2 cites·13 claims
- 4862US8502283B2Strained fully depleted silicon on insulator semiconductor deviceXIANG QI·Filed 2007·Granted Aug 6, 2013·3 cites·18 claims
- 4962US6830987B1Semiconductor device with a silicon-on-void structure and method of making the sameADVANCED MICRO DEVICES INC·Filed 2003·Granted Dec 14, 2004·11 cites·12 claims
- 5061US8008136B2Fully silicided gate structure for FinFET devicesADVANCED MICRO DEVICES INC·Filed 2006·Granted Aug 30, 2011·2 cites·12 claims
Showing the top 50 of 64 patent records by PatentIndex Score.
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