Inventor · disambiguated record
Reinaldo Vega
Also filed as: VEGA REINALDO · VEGA REINALDO A · VEGA REINALDO ARIEL
171 granted patents·83 pending applications·621 citations·filing 2007–2024
99Inventor score
Top patents by PatentIndex Score
254 records- 0199US9530700B1Method of fabricating vertical field effect transistors with protective fin liner during bottom spacer recess etchIBM·Filed 2016·Granted Dec 27, 2016·65 cites·15 claims
- 0299US9437503B1Vertical FETs with variable bottom spacer recessIBM·Filed 2015·Granted Sep 6, 2016·73 cites·20 claims
- 0398US11211452B1Transistor having stacked source/drain regions with formation assistance regions and multi-region wrap-around source/drain contactsIBM·Filed 2020·Granted Dec 28, 2021·7 cites·19 claims
- 0498US9859421B1Vertical field effect transistor with subway etch replacement metal gateIBM·Filed 2016·Granted Jan 2, 2018·25 cites·10 claims
- 0597US10170584B2Nanosheet field effect transistors with partial inside spacersIBM·Filed 2017·Granted Jan 1, 2019·11 cites·14 claims
- 0697US9728466B1Vertical field effect transistors with metallic source/drain regionsIBM·Filed 2016·Granted Aug 8, 2017·24 cites·14 claims
- 0796US10096607B1Three-dimensional stacked junctionless channels for dense SRAMIBM·Filed 2017·Granted Oct 9, 2018·14 cites·20 claims
- 0896US9761727B2Vertical FETs with variable bottom spacer recessIBM·Filed 2016·Granted Sep 12, 2017·12 cites·6 claims
- 0996US9601491B1Vertical field effect transistors having epitaxial fin channel with spacers below gate structureIBM·Filed 2016·Granted Mar 21, 2017·10 cites·20 claims
- 1096US9305835B2Formation of air-gap spacer in transistorIBM·Filed 2014·Granted Apr 5, 2016·29 cites·20 claims
- 1196US8643122B2Silicide contacts having different shapes on regions of a semiconductor deviceIBM·Filed 2012·Granted Feb 4, 2014·26 cites·9 claims
- 1296US8415250B2Method of forming silicide contacts of different shapes selectively on regions of a semiconductor deviceALPTEKIN EMRE·Filed 2011·Granted Apr 9, 2013·40 cites·9 claims
- 1395US11710699B2Complementary FET (CFET) buried sidewall contact with spacer footIBM·Filed 2021·Granted Jul 25, 2023·2 cites·14 claims
- 1495US9911804B1Vertical fin field effect transistor with air gap spacersIBM·Filed 2016·Granted Mar 6, 2018·8 cites·6 claims
- 1595US9111962B1Selective dielectric spacer deposition for exposing sidewalls of a finFETIBM·Filed 2014·Granted Aug 18, 2015·18 cites·17 claims
- 1693US11588105B2Phase-change memory device with reduced programming voltageIBM·Filed 2021·Granted Feb 21, 2023·2 cites·20 claims
- 1793US10249739B2Nanosheet MOSFET with partial release and source/drain epitaxyIBM·Filed 2017·Granted Apr 2, 2019·9 cites·18 claims
- 1893US10109535B2Method of fabricating vertical field effect transistors with protective fin liner during bottom spacer recess ETCHIBM·Filed 2016·Granted Oct 23, 2018·6 cites·13 claims
- 1992US9349789B1Coaxial carbon nanotube capacitor for eDRAMIBM·Filed 2014·Granted May 24, 2016·10 cites·11 claims
- 2092US9082851B2FinFET having suppressed leakage currentIBM·Filed 2013·Granted Jul 14, 2015·15 cites·13 claims
- 2192US8815693B2FinFET device formationIBM·Filed 2013·Granted Aug 26, 2014·13 cites·17 claims
- 2291US11289573B2Contact resistance reduction in nanosheet device structureIBM·Filed 2019·Granted Mar 29, 2022·5 cites·20 claims
- 2391US10283416B2Vertical FETS with variable bottom spacer recessIBM·Filed 2018·Granted May 7, 2019·4 cites·20 claims
- 2491US10236344B2Tunnel transistors with abrupt junctionsIBM·Filed 2015·Granted Mar 19, 2019·7 cites·13 claims
- 2591US10128347B2Gate-all-around field effect transistor having multiple threshold voltagesIBM·Filed 2017·Granted Nov 13, 2018·6 cites·14 claims
- 2691US9466693B1Self aligned replacement metal source/drain finFETIBM·Filed 2015·Granted Oct 11, 2016·5 cites·17 claims
- 2791US9312185B2Formation of metal resistor and e-fuseIBM·Filed 2014·Granted Apr 12, 2016·11 cites·14 claims
- 2890US12057387B2Decoupling capacitor inside gate cut trenchIBM·Filed 2020·Granted Aug 6, 2024·2 cites·21 claims
- 2990US9349836B2Fin end spacer for preventing merger of raised active regionsIBM·Filed 2014·Granted May 24, 2016·6 cites·11 claims
- 3090US9231072B2Multi-composition gate dielectric field effect transistorsIBM·Filed 2014·Granted Jan 5, 2016·10 cites·10 claims
- 3189US9431395B2Protection of semiconductor-oxide-containing gate dielectric during replacement gate formationIBM·Filed 2014·Granted Aug 30, 2016·7 cites·10 claims
- 3289US9035430B2Semiconductor fin on local oxideVEGA REINALDO A·Filed 2012·Granted May 19, 2015·9 cites·19 claims
- 3388US10164119B2Vertical field effect transistors with protective fin liner during bottom spacer recess etchIBM·Filed 2017·Granted Dec 25, 2018·3 cites·19 claims
- 3488US9875939B1Methods of forming uniform and pitch independent fin recessGLOBALFOUNDRIES INC·Filed 2016·Granted Jan 23, 2018·5 cites·20 claims
- 3588US8853862B2Contact structures for semiconductor transistorsALPTEKIN EMRE·Filed 2011·Granted Oct 7, 2014·9 cites·13 claims
- 3688US8629510B2Two-step silicide formationIBM·Filed 2013·Granted Jan 14, 2014·7 cites·6 claims
- 3787US10340340B2Multiple-threshold nanosheet transistorsIBM·Filed 2016·Granted Jul 2, 2019·3 cites·2 claims
- 3887US10170485B2Three-dimensional stacked junctionless channels for dense SRAMIBM·Filed 2018·Granted Jan 1, 2019·4 cites·20 claims
- 3986US10418450B2Self aligned replacement metal source/drain finFETIBM·Filed 2016·Granted Sep 17, 2019·3 cites·2 claims
- 4086US9190406B2Fin field effect transistors having heteroepitaxial channelsIBM·Filed 2014·Granted Nov 17, 2015·7 cites·20 claims
- 4186US2025142872A1Self aligned replacement metal source/drain finfetTESSERA LLC·Filed 2024·Application pending·0 cites
- 4285US11342446B2Nanosheet field effect transistors with partial inside spacersTESSERA INC·Filed 2019·Granted May 24, 2022·2 cites·20 claims
- 4385US11056391B2Subtractive vFET process flow with replacement metal gate and metallic source/drainIBM·Filed 2016·Granted Jul 6, 2021·4 cites·3 claims
- 4485US10586854B2Gate-all-around field effect transistor having multiple threshold voltagesIBM·Filed 2018·Granted Mar 10, 2020·2 cites·19 claims
- 4585US9680019B1Fin-type field-effect transistors with strained channelsGLOBALFOUNDRIES INC·Filed 2016·Granted Jun 13, 2017·3 cites·13 claims
- 4685US9536900B2Forming fins of different semiconductor materials on the same substrateGLOBALFOUNDRIES INC·Filed 2014·Granted Jan 3, 2017·7 cites·13 claims
- 4783US10915811B1Intercalation cells for multi-task learningIBM·Filed 2019·Granted Feb 9, 2021·4 cites·20 claims
- 4883US10559670B2Nanosheet field effect transistors with partial inside spacersIBM·Filed 2017·Granted Feb 11, 2020·2 cites·20 claims
- 4982US11244864B2Reducing parasitic capacitance within semiconductor devicesIBM·Filed 2020·Granted Feb 8, 2022·1 cites·20 claims
- 5082US9859384B2Vertical field effect transistors with metallic source/drain regionsIBM·Filed 2017·Granted Jan 2, 2018·3 cites·14 claims
Showing the top 50 of 254 patent records by PatentIndex Score.
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