Inventor · disambiguated record
Masato Yonezawa
Also filed as: YONEZAWA MASATO
38 granted patents·1 pending application·937 citations·filing 1996–2024
98Inventor score
Files withSEMICONDUCTOR ENERGY LAB23TOKYO ELECTRON LTD9MATSUNAGA MASANOBU2MITSUBISHI ELECTRIC CORP1TDK CORP1
Top patents by PatentIndex Score
39 records- 0199US7030551B2Area sensor and display apparatus provided with an area sensorSEMICONDUCTOR ENERGY LAB·Filed 2001·Granted Apr 18, 2006·148 cites·48 claims
- 0296US8563096B2Vertical film formation apparatus and method for using sameMATSUNAGA MASANOBU·Filed 2010·Granted Oct 22, 2013·31 cites·13 claims
- 0396US8298628B2Low temperature deposition of silicon-containing filmsYANG LIU·Filed 2009·Granted Oct 30, 2012·58 cites·4 claims
- 0495US6027960ALaser annealing method and laser annealing deviceSEMICONDUCTOR ENERGY LAB·Filed 1996·Granted Feb 22, 2000·146 cites·107 claims
- 0594US6846696B2Method for manufacturing solar batterySEMICONDUCTOR ENERGY LAB·Filed 2002·Granted Jan 25, 2005·73 cites·20 claims
- 0693US7786544B2Area sensor and display apparatus provided with an area sensorSEMICONDUCTOR ENERGY LAB·Filed 2006·Granted Aug 31, 2010·13 cites·26 claims
- 0792US9376751B2Plasma processing device and operation methodTOKYO ELECTRON LTD·Filed 2015·Granted Jun 28, 2016·3 cites·12 claims
- 0892US8058699B2Area sensor and display apparatus provided with an area sensorYAMAZAKI SHUNPEI·Filed 2010·Granted Nov 15, 2011·8 cites·23 claims
- 0991US6743700B2Semiconductor film, semiconductor device and method of their productionSEMICONDUCTOR ENERGY LAB·Filed 2002·Granted Jun 1, 2004·48 cites·13 claims
- 1090US7528057B2Laser annealing method and laser annealing deviceSEMICONDUCTOR ENERGY LAB·Filed 2006·Granted May 5, 2009·11 cites·24 claims
- 1190US6827787B2Conveyor device and film formation apparatus for a flexible substrateSEMICONDUCTOR ENERGY LAB·Filed 2001·Granted Dec 7, 2004·35 cites·12 claims
- 1290US6444506B1Method of manufacturing silicon thin film devices using laser annealing in a hydrogen mixture gas followed by nitride formationSEMICONDUCTOR ENERGY LAB·Filed 1996·Granted Sep 3, 2002·114 cites·75 claims
- 1388US6348369B1Method for manufacturing semiconductor devicesSEMICONDUCTOR ENERGY LAB·Filed 1999·Granted Feb 19, 2002·63 cites·30 claims
- 1487US7365004B2Method for manufacturing semiconductor deviceSEMICONDUCTOR ENERGY LAB·Filed 2005·Granted Apr 29, 2008·8 cites·32 claims
- 1585US6692984B2Method of manufacturing a semiconductor deviceSEMICONDUCTOR ENERGY LAB·Filed 2002·Granted Feb 17, 2004·49 cites·26 claims
- 1684US6825492B2Method of manufacturing a semiconductor deviceSEMICONDUCTOR ENERGY LAB·Filed 2004·Granted Nov 30, 2004·28 cites·15 claims
- 1784US6620288B2Substrate treatment apparatusSEMICONDUCTOR ENERGY LAB·Filed 2001·Granted Sep 16, 2003·31 cites·16 claims
- 1882US8216648B2Film formation method and apparatusMATSUNAGA MASANOBU·Filed 2010·Granted Jul 10, 2012·6 cites·3 claims
- 1981US8378443B2Area sensor and display apparatus provided with an area sensorSEMICONDUCTOR ENERGY LAB·Filed 2011·Granted Feb 19, 2013·2 cites·21 claims
- 2079US7041580B2Laser annealing method and laser annealing deviceSEMICONDUCTOR ENERGY LAB·Filed 2001·Granted May 9, 2006·15 cites·16 claims
- 2174US7510901B2Conveyor device and film formation apparatus for a flexible substrateSEMICONDUCTOR ENERGY LAB·Filed 2005·Granted Mar 31, 2009·1 cites·8 claims
- 2274US6916509B2Conveyor device and film formation apparatus for a flexible substrateTDK CORP·Filed 2004·Granted Jul 12, 2005·9 cites·3 claims
- 2373US10668512B2Particle removal method and substrate processing methodTOKYO ELECTRON LTD·Filed 2017·Granted Jun 2, 2020·1 cites·13 claims
- 2471US11390948B2Film forming apparatusTOKYO ELECTRON LTD·Filed 2019·Granted Jul 19, 2022·0 cites·5 claims
- 2570US7351605B2Method of manufacturing a semiconductor deviceSEMICONDUCTOR ENERGY LAB·Filed 2004·Granted Apr 1, 2008·14 cites·9 claims
- 2666US7594479B2Plasma CVD device and discharge electrodeSEMICONDUCTOR ENERGY LAB·Filed 2001·Granted Sep 29, 2009·7 cites·30 claims
- 2766US7384828B2Semiconductor film, semiconductor device and method of their productionSEMICONDUCTOR ENERGY LAB·Filed 2004·Granted Jun 10, 2008·8 cites·16 claims
- 2864US9941343B2Area sensor and display apparatus provided with an area sensorSEMICONDUCTOR ENERGY LAB·Filed 2017·Granted Apr 10, 2018·0 cites·17 claims
- 2964US8012787B2Photovoltaic device and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 2008·Granted Sep 6, 2011·1 cites·8 claims
- 3063US9082677B2Area sensor and display apparatus provided with an area sensorSEMICONDUCTOR ENERGY LAB·Filed 2013·Granted Jul 14, 2015·0 cites·20 claims
- 3162US10385453B2Film forming apparatusTOKYO ELECTRON LTD·Filed 2016·Granted Aug 20, 2019·0 cites·3 claims
- 3262US9711582B2Area sensor and display apparatus provided with an area sensorSEMICONDUCTOR ENERGY LAB·Filed 2016·Granted Jul 18, 2017·0 cites·23 claims
- 3361US9337243B2Area sensor and display apparatus provided with an area sensorSEMICONDUCTOR ENERGY LAB·Filed 2015·Granted May 10, 2016·0 cites·23 claims
- 3461US2024347351A1Substrate-processing method and substrate-processing apparatusTOKYO ELECTRON LTD·Filed 2024·Application pending·0 cites
- 3560US7953512B2Substrate processing system, control method for substrate processing apparatus and program stored on mediumTokyo Electron Limitetd·Filed 2008·Granted May 31, 2011·2 cites·6 claims
- 3654US10103009B2Plasma processing device and operation methodTOKYO ELECTRON LTD·Filed 2016·Granted Oct 16, 2018·0 cites·8 claims
- 3751US7462376B2CVD method for forming silicon nitride filmTOKYO ELECTRON LTD·Filed 2004·Granted Dec 9, 2008·4 cites·12 claims
- 3847US9865454B2Substrate processing apparatus and substrate processing methodTOKYO ELECTRON LTD·Filed 2014·Granted Jan 9, 2018·0 cites·8 claims
- 3943US11328901B2Deposition methodTOKYO ELECTRON LTD·Filed 2020·Granted May 10, 2022·0 cites·9 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →