Inventor · disambiguated record
Takeharu Kuroiwa
Also filed as: KUROIWA TAKEHARU
39 granted patents·3 pending applications·671 citations·filing 1993–2018
98Inventor score
Files withMITSUBISHI ELECTRIC CORP21RENESAS ELECTRONICS CORP7RENESAS TECH CORP3TAKENAGA TAKASHI3FURUTA HARUO2
Top patents by PatentIndex Score
42 records- 0196US8492881B2Magnetic storage deviceKUROIWA TAKEHARU·Filed 2010·Granted Jul 23, 2013·97 cites·16 claims
- 0290US8362581B2Magnetic memory element and magnetic memory deviceRENESAS ELECTRONICS CORP·Filed 2011·Granted Jan 29, 2013·13 cites·11 claims
- 0389US8378674B2Magnetic field detection deviceMITSUBISHI ELECTRIC CORP·Filed 2008·Granted Feb 19, 2013·18 cites·2 claims
- 0488US5442213ASemiconductor device with high dielectric capacitor having sidewall spacersMITSUBISHI ELECTRIC CORP·Filed 1994·Granted Aug 15, 1995·82 cites·13 claims
- 0587US7605420B2Semiconductor tunneling magneto resistance device and method of manufacturing the sameRENESAS TECH CORP·Filed 2006·Granted Oct 20, 2009·15 cites·5 claims
- 0687US5418388ASemiconductor device having a capacitor with an adhesion layerMITSUBISHI ELECTRIC CORP·Filed 1994·Granted May 23, 1995·72 cites·11 claims
- 0784US8791692B2Magnetic position detecting deviceFURUKAWA TAISUKE·Filed 2010·Granted Jul 29, 2014·8 cites·10 claims
- 0884US6344991B1Nonvolatile semiconductor memory deviceMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Feb 5, 2002·38 cites·10 claims
- 0980US6015989ASemiconductor device having a capacitor electrode formed of iridum or ruthenium and a quantity of oxygenMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Jan 18, 2000·53 cites·6 claims
- 1079US8013407B2Magnetic memory device having a recording layerRENESAS ELECTRONICS CORP·Filed 2009·Granted Sep 6, 2011·10 cites·5 claims
- 1178US8269295B2Magnetic memory device having a recording layerTAKENAGA TAKASHI·Filed 2011·Granted Sep 18, 2012·6 cites·7 claims
- 1277US7786725B2Magnetic field detection apparatus for detecting an external magnetic field applied to a magnetoresistance effect element, and method of adjusting the sameMITSUBISHI ELECTRIC CORP·Filed 2006·Granted Aug 31, 2010·9 cites·6 claims
- 1377US7375516B2Magnetic field detector, current detector, position detector and rotation detector employing itMITSUBISHI ELECTRIC CORP·Filed 2004·Granted May 20, 2008·22 cites·18 claims
- 1476US6239460B1Semiconductor device which includes a capacitor having a lower electrode formed of iridium or rutheniumMITSUBISHI ELECTRIC CORP·Filed 1996·Granted May 29, 2001·36 cites·7 claims
- 1575US7773408B2Nonvolatile memory deviceRENESAS TECH CORP·Filed 2006·Granted Aug 10, 2010·8 cites·11 claims
- 1674US9988738B2Method for manufacturing SiC epitaxial waferMITSUBISHI ELECTRIC CORP·Filed 2013·Granted Jun 5, 2018·3 cites·20 claims
- 1774US8036024B2Magnetic storage element storing data by magnetoresistive effectRENESAS ELECTRONICS CORP·Filed 2006·Granted Oct 11, 2011·5 cites·3 claims
- 1874US5372850AMethod of manufacturing an oxide-system dielectric thin film using CVD methodMITSUBISHI ELECTRIC CORP·Filed 1993·Granted Dec 13, 1994·39 cites·33 claims
- 1973US6049103ASemiconductor capacitorMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Apr 11, 2000·30 cites·2 claims
- 2071US8546151B2Method for manufacturing magnetic storage device and magnetic storage deviceFURUTA HARUO·Filed 2008·Granted Oct 1, 2013·5 cites·2 claims
- 2169US5534458AMethod of manufacturing a semiconductor device with high dielectric capacitor having sidewall spacersMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Jul 9, 1996·27 cites·2 claims
- 2268US8427866B2Magnetic storage element and magnetic storage deviceTAKENAGA TAKASHI·Filed 2012·Granted Apr 23, 2013·4 cites·7 claims
- 2368US7733210B2Magnetic field detector and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 2006·Granted Jun 8, 2010·3 cites·20 claims
- 2467US8383427B2Semiconductor device including a magnetic tunnel junction device including a laminated structure and manufacturing method thereforRENESAS ELECTRONICS CORP·Filed 2012·Granted Feb 26, 2013·1 cites·5 claims
- 2563US8679952B2Method of manufacturing silicon carbide epitaxial waferTOMITA NOBUYUKI·Filed 2011·Granted Mar 25, 2014·2 cites·20 claims
- 2663US8258592B2Semiconductor device including a magnetic tunnel junction device including a laminated structure and manufacturing method thereforMATSUDA RYOJI·Filed 2009·Granted Sep 4, 2012·2 cites·6 claims
- 2762US7508203B2Magnetic field detector, and current detection device, position detection device and rotation detection devices using the magnetic field detectorMITSUBISHI ELECTRIC CORP·Filed 2008·Granted Mar 24, 2009·3 cites·13 claims
- 2861US7983075B2Nonvolatile memory deviceRENESAS ELECTRONICS CORP·Filed 2010·Granted Jul 19, 2011·2 cites·12 claims
- 2961US7973376B2Semiconductor device and method of manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2009·Granted Jul 5, 2011·3 cites·9 claims
- 3061US5668041AMethod of manufacturing a semiconductor device having a capacitorMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Sep 16, 1997·18 cites·1 claims
- 3159US6187622B1Semiconductor memory device and method for producing the sameMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Feb 13, 2001·19 cites·16 claims
- 3258US8518562B2Magnetic storage deviceTAKENAGA TAKASHI·Filed 2009·Granted Aug 27, 2013·2 cites·20 claims
- 3349US5939744ASemiconductor device with x-ray absorption layerMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Aug 17, 1999·10 cites·4 claims
- 3448US2008168649A1Magnetic recording element and method of manufacturing magnetic recording elementRENESAS TECH CORP·Filed 2008·Application pending·0 cites
- 3547US7932573B2Magnetic memory element and magnetic memory deviceRENESAS ELECTRONICS CORP·Filed 2009·Granted Apr 26, 2011·0 cites·4 claims
- 3645US6420191B2Method of manufacturing semiconductor device which includes a capacitor having a lower electrode formed of iridium or rutheniumMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Jul 16, 2002·2 cites·10 claims
- 3744US11094835B2Silicon carbide substrate, method for manufacturing silicon carbide substrate, and method for manufacturing silicon carbide semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2018·Granted Aug 17, 2021·0 cites·10 claims
- 3841US2004246777A1Magnetic recording element and method of manufacturing magnetic recording elementFiled 2004·Application pending·0 cites
- 3939US10199457B2Silicon carbide semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2016·Granted Feb 5, 2019·0 cites·17 claims
- 4037US5652186ASemiconductor device and a method of manufacturing thereofMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Jul 29, 1997·4 cites·2 claims
- 4136US2011204458A1Semiconductor Device and Method of Manufacturing the SameFURUTA HARUO·Filed 2011·Application pending·0 cites
- 4228US9553063B2Semiconductor element, semiconductor device and method for manufacturing semiconductor elementOHTSU YOSHIJI·Filed 2011·Granted Jan 24, 2017·0 cites·11 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →