Inventor · disambiguated record
Dong-Joo Bae
Also filed as: BAE DONG J · BAE DONG-JOO
13 granted patents·219 citations·filing 1988–2014
92Inventor score
Files withSAMSUNG ELECTRONICS CO LTD8TEXAS INSTRUMENTS INC2ANAM SEMICONDUCTOR INC1MCMULLAN RUSSELL CARLTON1SAMSUNG ELECTRONICW CO LTD1
Top patents by PatentIndex Score
13 records- 0179US5135883AProcess for producing a stacked capacitor of a dram cellSAMSUNG ELECTRONICS CO LTD·Filed 1990·Granted Aug 4, 1992·64 cites·14 claims
- 0278US8871587B2Complementary stress memorization technique layer methodMCMULLAN RUSSELL CARLTON·Filed 2009·Granted Oct 28, 2014·6 cites·9 claims
- 0373US5256585AProcess for fabricating a gate-drain overlapped semiconductorSAMSUNG ELECTRONICS CO LTD·Filed 1991·Granted Oct 26, 1993·38 cites·23 claims
- 0472US8962419B2Complementary stress memorization technique layer methodTEXAS INSTRUMENTS INC·Filed 2014·Granted Feb 24, 2015·2 cites·10 claims
- 0566US5095346AStacked-capacitor for a dram cellSAMSUNG ELECTRONICS CO LTD·Filed 1990·Granted Mar 10, 1992·26 cites·9 claims
- 0654US5187548AStacked capacitor of a dram cell with fin-shaped electrodes having supporting layersSAMSUNG ELECTRONICS CO LTD·Filed 1990·Granted Feb 16, 1993·18 cites·17 claims
- 0754US4965214AMethod for manufacturing poly-crystal sillicon having high resistanceSAMSUNG ELECTRONICS CO LTD·Filed 1988·Granted Oct 23, 1990·17 cites·21 claims
- 0849US6426277B1Methods and a device for heat treating a semiconductor wafer having different kinds of impuritiesANAM SEMICONDUCTOR INC·Filed 1999·Granted Jul 30, 2002·19 cites·19 claims
- 0948US5236859AMethod of making stacked-capacitor for a dram cell sameSAMSUNG ELECTRONICS CO LTD·Filed 1991·Granted Aug 17, 1993·14 cites·5 claims
- 1046US7927987B2Method of reducing channeling of ion implants using a sacrificial scattering layerTEXAS INSTRUMENTS INC·Filed 2007·Granted Apr 19, 2011·0 cites·6 claims
- 1135US5320980AInterconnection structure in semiconductor device and the method thereofSAMSUNG ELECTRONICS CO LTD·Filed 1992·Granted Jun 14, 1994·6 cites·3 claims
- 1231US5141884AIsolation method of semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 1990·Granted Aug 25, 1992·4 cites·4 claims
- 1329US5285110AInterconnection structure in semiconductor deviceSAMSUNG ELECTRONICW CO LTD·Filed 1991·Granted Feb 8, 1994·5 cites·6 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →