Inventor · disambiguated record
Aomar Halimaoui
Also filed as: HALIMAOUI AOMAR
22 granted patents·6 pending applications·64 citations·filing 1997–2020
92Inventor score
Files withCOMMISSARIAT ENERGIE ATOMIQUE8HALIMAOUI AOMAR4ST MICROELECTRONICS SA4ST MICROELECTRONICS CROLLES 23ST MICROELECTRONICS CROLLES 2 SAS3
Top patents by PatentIndex Score
28 records- 0179US10319806B2Electrode for a metal-insulator-metal structure, capacitor of metal-insulator-metal type, and method for fabricating one such electrode and one such capacitorCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2016·Granted Jun 11, 2019·5 cites·19 claims
- 0276US9704709B2Method for causing tensile strain in a semiconductor filmCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2016·Granted Jul 11, 2017·2 cites·14 claims
- 0373US11276652B2Method for securing an integrated circuit upon making itCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2019·Granted Mar 15, 2022·2 cites·13 claims
- 0465US6177235B1Antireflection treatment of reflective surfacesFRANCE TELECOM·Filed 1997·Granted Jan 23, 2001·37 cites·10 claims
- 0562US11749807B2Electrically conductive elementCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2020·Granted Sep 5, 2023·0 cites·19 claims
- 0659US8178426B2Method for manufacturing a structure of semiconductor-on-insulator typeHALIMAOUI AOMAR·Filed 2008·Granted May 15, 2012·2 cites·27 claims
- 0759US7638844B2Manufacturing method of semiconductor-on-insulator region structuresST MICROELECTRONICS SA·Filed 2007·Granted Dec 29, 2009·1 cites·55 claims
- 0857US9525067B2Method for forming integrated circuits on a strained semiconductor substrateST MICROELECTRONICS CROLLES 2 SAS·Filed 2014·Granted Dec 20, 2016·0 cites·12 claims
- 0955US9356094B2Method for making a semi-conducting substrate located on an insulation layerST MICROELECTRONICS CROLLES 2·Filed 2013·Granted May 31, 2016·0 cites·24 claims
- 1054US8536027B2Method for making a semi-conducting substrate located on an insulation layerHALIMAOUI AOMAR·Filed 2008·Granted Sep 17, 2013·0 cites·14 claims
- 1150US9219286B2Housing, in particular for a biofuel cellMAZOYER PASCALE·Filed 2011·Granted Dec 22, 2015·0 cites·27 claims
- 1250US7569482B2Method for the selective removal of an unsilicided metalST MICROELECTRONICS CROLLES 2·Filed 2007·Granted Aug 4, 2009·0 cites·21 claims
- 1349US9460923B2Method of forming a strained silicon layerST MICROELECTRONICS CROLLES 2 SAS·Filed 2014·Granted Oct 4, 2016·0 cites·14 claims
- 1449US6969661B2Method for forming a localized region of a material difficult to etchST MICROELECTRONICS SA·Filed 2003·Granted Nov 29, 2005·2 cites·9 claims
- 1548US9330957B2Process for assembling two wafers and corresponding deviceHALIMAOUI AOMAR·Filed 2011·Granted May 3, 2016·0 cites·15 claims
- 1647US7279404B2Process for fabricating strained layers of silicon or of a silicon/germanium alloyST MICROELECTRONICS SA·Filed 2004·Granted Oct 9, 2007·1 cites·8 claims
- 1746US10651376B2Method of manufacturing a memory deviceCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2018·Granted May 12, 2020·0 cites·30 claims
- 1846US2016218178A1Process for assembling two wafers and corresponding deviceST MICROELECTRONICS CROLLES 2 SAS·Filed 2016·Application pending·0 cites
- 1945US8906776B2Method for forming integrated circuits on a strained semiconductor substrateBENSAHEL DANIEL·Filed 2011·Granted Dec 9, 2014·0 cites·28 claims
- 2044US2015155175A1Method for the metallization of a porous materialCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2014·Application pending·0 cites
- 2143US6287936B1Method of forming porous silicon in a silicon substrate, in particular for improving the performance of an inductive circuitST MICROELECTRONICS SA·Filed 1999·Granted Sep 11, 2001·12 cites·34 claims
- 2241US2012225326A1Module element, in particular for a biofuel cell, and manufacturing processFOURNEL RICHARD·Filed 2012·Application pending·0 cites
- 2341US2005085026A1Manufacturing method of semiconductor-on-insulator region structuresFiled 2004·Application pending·0 cites
- 2441US2006088988A1Method for forming silicon-germanium in the upper portion of a silicon substrateST MICROELECTRONICS CROLLES 2·Filed 2005·Application pending·0 cites
- 2540US7781296B2Integrated circuit comprising a capacitor with metal electrodes and process for fabricating such a capacitorSTMICROELECTRONICS SAS·Filed 2005·Granted Aug 24, 2010·0 cites·14 claims
- 2639US8975682B2Integrated circuit comprising a capacitor with HSG metal electrodesHALIMAOUI AOMAR·Filed 2010·Granted Mar 10, 2015·0 cites·7 claims
- 2739US7635615B2Manufacturing processing for an isolated transistor with strained channelCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2006·Granted Dec 22, 2009·0 cites·29 claims
- 2838US2020044138A1Device based on alkali metal niobate comprising a barrier layer and manufacturing processCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2019·Application pending·0 cites
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