Inventor · disambiguated record
Gaku Minamihaba
Also filed as: MINAMIHABA GAKU
63 granted patents·33 pending applications·1,031 citations·filing 1994–2015
99Inventor score
Top patents by PatentIndex Score
96 records- 0197US6375545B1Chemical mechanical method of polishing wafer surfacesTOSHIBA KK·Filed 2000·Granted Apr 23, 2002·131 cites·17 claims
- 0295US6740590B1Aqueous dispersion, aqueous dispersion for chemical mechanical polishing used for manufacture of semiconductor devices, method for manufacture of semiconductor devices, and method for formation of embedded writingTOSHIBA KK·Filed 2000·Granted May 25, 2004·102 cites·22 claims
- 0395US6454819B1Composite particles and production process thereof, aqueous dispersion, aqueous dispersion composition for chemical mechanical polishing, and process for manufacture of semiconductor deviceTOSHIBA KK·Filed 2000·Granted Sep 24, 2002·108 cites·37 claims
- 0493US5592024ASemiconductor device having a wiring layer with a barrier layerTOSHIBA KK·Filed 1994·Granted Jan 7, 1997·133 cites·5 claims
- 0591US7332104B2Slurry for CMP, polishing method and method of manufacturing semiconductor deviceTOSHIBA KK·Filed 2006·Granted Feb 19, 2008·15 cites·15 claims
- 0691US6794286B2Process for fabricating a metal wiring and metal contact in a semicondutor deviceTOSHIBA KK·Filed 2000·Granted Sep 21, 2004·55 cites·11 claims
- 0790US7307344B2Semiconductor device including a discontinuous film and method for manufacturing the sameTOSHIBA KK·Filed 2005·Granted Dec 11, 2007·17 cites·4 claims
- 0888US7166017B2Slurry for CMP, polishing method and method of manufacturing semiconductor deviceTOSHIBA KK·Filed 2004·Granted Jan 23, 2007·23 cites·24 claims
- 0987US7042099B2Semiconductor device containing a dummy wireTOSHIBA KK·Filed 2003·Granted May 9, 2006·35 cites·22 claims
- 1084US6611060B1Semiconductor device having a damascene type wiring layerTOSHIBA KK·Filed 2000·Granted Aug 26, 2003·26 cites·10 claims
- 1183US7842191B2CMP slurry for metallic film, polishing method and method of manufacturing semiconductor deviceTOSHIBA KK·Filed 2006·Granted Nov 30, 2010·7 cites·11 claims
- 1283US7402521B2Method for chemically mechanically polishing organic film, method of manufacturing semiconductor device, and program thereforTOSHIBA KK·Filed 2006·Granted Jul 22, 2008·8 cites·20 claims
- 1383US6924227B2Slurry for chemical mechanical polishing and method of manufacturing semiconductor deviceJSR CORP·Filed 2001·Granted Aug 2, 2005·28 cites·20 claims
- 1483US6858539B2Post-CMP treating liquid and method for manufacturing semiconductor deviceTOSHIBA KK·Filed 2002·Granted Feb 22, 2005·24 cites·9 claims
- 1583US6576554B2Slurry for CMP, method of forming thereof and method of manufacturing semiconductor device including a CMP processTOSHIBA KK·Filed 2001·Granted Jun 10, 2003·25 cites·6 claims
- 1682US6312321B1Polishing apparatusTOSHIBA KK·Filed 2000·Granted Nov 6, 2001·22 cites·8 claims
- 1781US7435682B2Method of manufacturing semiconductor deviceTOSHIBA KK·Filed 2005·Granted Oct 14, 2008·8 cites·20 claims
- 1880US8871644B2Method of manufacturing semiconductor deviceTOSHIBA KK·Filed 2013·Granted Oct 28, 2014·4 cites·20 claims
- 1980US6935928B2Chemical mechanical polishing aqueous dispersion and chemical mechanical polishing methodTOSHIBA KK·Filed 2004·Granted Aug 30, 2005·24 cites·20 claims
- 2080US6794285B2Slurry for CMP, and method of manufacturing semiconductor deviceTOSHIBA KK·Filed 2003·Granted Sep 21, 2004·19 cites·13 claims
- 2179US7655559B2Post-CMP treating liquid and manufacturing method of semiconductor device using the sameTOSHIBA KK·Filed 2006·Granted Feb 2, 2010·5 cites·9 claims
- 2279US7459398B2Slurry for CMP, polishing method and method of manufacturing semiconductor deviceTOSHIBA KK·Filed 2005·Granted Dec 2, 2008·6 cites·7 claims
- 2378US9144879B2Planarization method and planarization apparatusTOSHIBA KK·Filed 2013·Granted Sep 29, 2015·3 cites·7 claims
- 2476US8575030B2Semiconductor device manufacturing methodMINAMIHABA GAKU·Filed 2011·Granted Nov 5, 2013·4 cites·20 claims
- 2574US6444139B1Slurry for CMP and CMP methodTOSHIBA KK·Filed 2000·Granted Sep 3, 2002·13 cites·9 claims
- 2674US6090699AMethod of making a semiconductor deviceTOSHIBA KK·Filed 1996·Granted Jul 18, 2000·35 cites·6 claims
- 2773US7071108B2Chemical mechanical polishing slurry containing abrasive particles exhibiting photocatalytic functionTOSHIBA KK·Filed 2002·Granted Jul 4, 2006·15 cites·22 claims
- 2872US7521350B2Manufacturing method of a semiconductor deviceTOSHIBA KK·Filed 2006·Granted Apr 21, 2009·4 cites·18 claims
- 2972US6858936B2Semiconductor device having an improved construction in the interlayer insulating filmTOSHIBA KK·Filed 2003·Granted Feb 22, 2005·15 cites·10 claims
- 3071US7833431B2Aqueous dispersion for CMP, polishing method and method for manufacturing semiconductor deviceTOSHIBA KK·Filed 2006·Granted Nov 16, 2010·3 cites·20 claims
- 3171US6653267B2Aqueous dispersion for chemical mechanical polishing used for polishing of copperTOSHIBA KK·Filed 2001·Granted Nov 25, 2003·13 cites·14 claims
- 3270US8337715B2CMP slurry for metallic film, polishing method and method of manufacturing semiconductor deviceMINAMIHABA GAKU·Filed 2010·Granted Dec 25, 2012·2 cites·12 claims
- 3370US7465668B2Method of manufacturing semiconductor deviceTOSHIBA KK·Filed 2005·Granted Dec 16, 2008·3 cites·9 claims
- 3470US7419910B2Slurry for CMP, polishing method and method of manufacturing semiconductor deviceTOSHIBA KK·Filed 2004·Granted Sep 2, 2008·12 cites·12 claims
- 3569US8703004B2Method for chemical planarization and chemical planarization apparatusMATSUI YUKITERU·Filed 2012·Granted Apr 22, 2014·2 cites·20 claims
- 3667US7307023B2Polishing method of Cu film and method for manufacturing semiconductor deviceTOSHIBA KK·Filed 2006·Granted Dec 11, 2007·2 cites·20 claims
- 3766US8685857B2Chemical mechanical polishing method of organic film and method of manufacturing semiconductor deviceMATSUI YUKITERU·Filed 2008·Granted Apr 1, 2014·2 cites·8 claims
- 3866US7060621B2Slurry for CMP, polishing method and method of manufacturing semiconductor deviceTOSHIBA KK·Filed 2004·Granted Jun 13, 2006·8 cites·15 claims
- 3965US7138073B2Slurry for chemical mechanical polishing for copper and method of manufacturing semiconductor device using the slurryTOSHIBA KK·Filed 2004·Granted Nov 21, 2006·7 cites·3 claims
- 4065US6896590B2CMP slurry and method for manufacturing a semiconductor deviceTOSHIBA KK·Filed 2002·Granted May 24, 2005·9 cites·20 claims
- 4164US8778802B2Polishing method and method for fabricating semiconductor deviceFUKUSHIMA DAI·Filed 2007·Granted Jul 15, 2014·2 cites·17 claims
- 4263US7494931B2Method for fabricating semiconductor device and polishing methodTOSHIBA KK·Filed 2006·Granted Feb 24, 2009·1 cites·16 claims
- 4363US6720250B2Method of manufacturing a semiconductor device using a slurry for chemical mechanical polishing of copperTOSHIBA KK·Filed 2002·Granted Apr 13, 2004·7 cites·11 claims
- 4461US6790769B2CMP slurry and method of manufacturing semiconductor deviceTOSHIBA KK·Filed 2002·Granted Sep 14, 2004·6 cites·8 claims
- 4559US7364667B2Slurry for CMP and CMP methodTOSHIBA KK·Filed 2002·Granted Apr 29, 2008·5 cites·4 claims
- 4659US6995090B2Polishing slurry for use in CMP of SiC series compound, polishing method, and method of manufacturing semiconductor deviceTOSHIBA KK·Filed 2002·Granted Feb 7, 2006·6 cites·17 claims
- 4758US7144804B2Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2004·Granted Dec 5, 2006·6 cites·10 claims
- 4857US6984582B2Method of making semiconductor device by polishing with intermediate clean polishingTOSHIBA KK·Filed 2003·Granted Jan 10, 2006·5 cites·20 claims
- 4955US7951717B2Post-CMP treating liquid and manufacturing method of semiconductor device using the sameTOSHIBA KK·Filed 2007·Granted May 31, 2011·0 cites·9 claims
- 5055US7700489B2Method of manufacturing a semiconductor deviceTOSHIBA KK·Filed 2004·Granted Apr 20, 2010·4 cites·14 claims
Showing the top 50 of 96 patent records by PatentIndex Score.
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