Inventor · disambiguated record
Qingqing Sun
Also filed as: SUN QINGQING
25 granted patents·20 pending applications·31 citations·filing 2010–2025
93Inventor score
Files withWANG PENGFEI17UNIV FUDAN15SUN QINGQING5ALIBABA GROUP HOLDING LTD3BOE TECHNOLOGY GROUP CO LTD1
Top patents by PatentIndex Score
45 records- 0182US10726028B2Method and apparatus for matching namesALIBABA GROUP HOLDING LTD·Filed 2019·Granted Jul 28, 2020·3 cites·17 claims
- 0279US9153500B2Method for improving the electromigration resistance in the copper interconnection processSUN QINGQING·Filed 2012·Granted Oct 6, 2015·7 cites·2 claims
- 0378US10699076B2Risk address identification method and apparatus, and electronic deviceALIBABA GROUP HOLDING LTD·Filed 2020·Granted Jun 30, 2020·1 cites·20 claims
- 0478US9508811B2Semi-floating-gate device and its manufacturing methodUNIV FUDAN·Filed 2014·Granted Nov 29, 2016·3 cites·4 claims
- 0572US9054303B2Metal-oxide-semiconductor (MOS) transistor structure integrated with a resistance random access memory (RRAM) and the manufacturing methods thereofUNIV FUDAN·Filed 2012·Granted Jun 9, 2015·2 cites·3 claims
- 0670US10762296B2Risk address identification method and apparatus, and electronic deviceALIBABA GROUP HOLDING LTD·Filed 2019·Granted Sep 1, 2020·1 cites·23 claims
- 0770US8748267B2Method for manufacturing a tunneling field effect transistor with a U-shaped channelWANG PENGFEI·Filed 2012·Granted Jun 10, 2014·3 cites·8 claims
- 0870US8574958B2Method for manufacturing a gate-control diode semiconductor memory deviceWANG PENGFEI·Filed 2012·Granted Nov 5, 2013·3 cites·6 claims
- 0969US8486754B1Method for manufacturing a gate-control diode semiconductor deviceWANG PENGFEI·Filed 2012·Granted Jul 16, 2013·3 cites·7 claims
- 1068US2025284172A1Display panel and display apparatusSHANGHAI TIANMA MICROELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 1166US9431506B2Metal-oxide-semiconductor (MOS) transistor structure integrated with a resistance random access memory (RRAM) and the manufacturing methods thereofUNIV FUDAN·Filed 2015·Granted Aug 30, 2016·1 cites·11 claims
- 1263US9147835B2Tunnel transistor structure integrated with a resistance random access memory (RRAM) and a manufacturing method thereofUNIV FUDAN·Filed 2012·Granted Sep 29, 2015·1 cites·3 claims
- 1363US8860179B2Inductive loop formed by through silicon via interconnectionWANG PENGFEI·Filed 2011·Granted Oct 14, 2014·1 cites·12 claims
- 1458US8586432B2Method for manufacturing vertical-channel tunneling transistorWANG PENGFEI·Filed 2012·Granted Nov 19, 2013·1 cites·14 claims
- 1557US12360075B1Construction method and application of microRNA electrochemical biosensorXuzhou Central Hospital·Filed 2024·Granted Jul 15, 2025·0 cites·6 claims
- 1657US9263351B2Method of forming an integrated inductor by dry etching and metal fillingUNIV FUDAN·Filed 2014·Granted Feb 16, 2016·0 cites·5 claims
- 1757US2025265687A1Model training method and platform, image inpainting method and apparatus, device, and mediumBOE TECHNOLOGY GROUP CO LTD·Filed 2023·Application pending·0 cites
- 1856US8426271B1Method for manufacturing a gate-control diode semiconductor memory deviceWANG PENGFEI·Filed 2012·Granted Apr 23, 2013·1 cites·7 claims
- 1954US11869827B2Three-dimensional capacitor-inductor based on high functional density through silicon via structure and preparation method thereofUNIV FUDAN·Filed 2020·Granted Jan 9, 2024·0 cites·10 claims
- 2054US2014159129A1Near-infrared-visible light adjustable image sensorUNIV FUDAN·Filed 2013·Application pending·0 cites
- 2151US9748406B2Semi-floating-gate device and its manufacturing methodUNIV FUDAN·Filed 2016·Granted Aug 29, 2017·0 cites·4 claims
- 2250US2012182063A1Power Device Using Photoelectron Injection to Modulate Conductivity and the Method ThereofWANG PENGFEI·Filed 2011·Application pending·0 cites
- 2347US11881442B2SOI active transfer board for three-dimensional packaging and preparation method thereofUNIV FUDAN·Filed 2020·Granted Jan 23, 2024·0 cites·8 claims
- 2446US11887912B2Through silicon via structure for three-dimensional integrated circuit packaging and manufacturing method thereofUNIV FUDAN·Filed 2020·Granted Jan 30, 2024·0 cites·10 claims
- 2545US11854939B2Three-dimensional integrated system of dram chip and preparation method thereofUNIV FUDAN·Filed 2020·Granted Dec 26, 2023·0 cites·4 claims
- 2644US12159179B2Three-dimensional integrated system of RFID chip and super capacitor and preparation method thereofUNIV FUDAN·Filed 2020·Granted Dec 3, 2024·0 cites·4 claims
- 2744US2015333141A1A high electron mobility device based on the gate-first process and the production method thereofUNIV FUDAN·Filed 2014·Application pending·0 cites
- 2842US2013078761A1Method for manufacturing a flexible transparent 1t1r storage unit based on a completely low-temperature processSUN QINGQING·Filed 2012·Application pending·0 cites
- 2942US2016013304A1A radio frequency power device for implementing asymmetric self-alignment of the source, drain and gate and the production method thereofUNIV FUDAN·Filed 2014·Application pending·0 cites
- 3042US2013237010A1Method for manufacturing a gate-control diode semiconductor memory deviceWANG PENGFEI·Filed 2012·Application pending·0 cites
- 3139US9099178B2Resistive random access memory with electric-field strengthened layer and manufacturing method thereofZHANG WEI·Filed 2012·Granted Aug 4, 2015·0 cites·6 claims
- 3239US2012305882A1NiO-based Resistive Random Access Memory and the Preparation Method ThereofGU JINGJING·Filed 2011·Application pending·0 cites
- 3339US2013178012A1Method for manufacturing a gate-control diode semiconductor deviceWANG PENGFEI·Filed 2012·Application pending·0 cites
- 3438US8994095B2Semiconductor memory device with a buried drain and its memory arrayWANG PENGFEI·Filed 2010·Granted Mar 31, 2015·0 cites·8 claims
- 3538US2013237009A1Method for manufacturing a gate-control diode semiconductor deviceWANG PENGFEI·Filed 2012·Application pending·0 cites
- 3637US2013078797A1Method for manufacturing a copper-diffusion barrier layer used in nano integrated circuitSUN QINGQING·Filed 2012·Application pending·0 cites
- 3737US2014167134A1Self-aligned vertical nonvolatile semiconductor memory deviceWANG PENGFEI·Filed 2012·Application pending·0 cites
- 3837US2014084472A1Compound dielectric anti-copper-diffusion barrier layer for copper connection and manufacturing method thereofUNIV FUDAN·Filed 2013·Application pending·0 cites
- 3937US2012309118A1Silicon wafer alignment method used in through-silicon-via interconnectionWANG PENGFEI·Filed 2011·Application pending·0 cites
- 4036US8455372B2Method for cleaning and passivating gallium arsenide surface autologous oxide and depositing AL203 dielectricSUN QINGQING·Filed 2012·Granted Jun 4, 2013·0 cites·2 claims
- 4136US2014034891A1Semiconductor memory structure and its manufacturing method thereofWANG PENGFEI·Filed 2011·Application pending·0 cites
- 4234US2012261744A1Microelectronic device structure and manufacturing method thereofWANG PENGFEI·Filed 2010·Application pending·0 cites
- 4334US2013078793A1Method for depositing a gate oxide and a gate electrode selectivelySUN QINGQING·Filed 2012·Application pending·0 cites
- 4434US2014003122A1Semiconductor memory structure and control method thereofWANG PENGFEI·Filed 2011·Application pending·0 cites
- 4532US2012200342A1gate controlled pn field-effect transistor and the control method thereofWANG PENGFEI·Filed 2011·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →