Inventor · disambiguated record
Ya-Fen Lin
Also filed as: LIN YA-FEN
22 granted patents·1 pending application·212 citations·filing 2004–2022
95Inventor score
Files withSILICON STORAGE TECH INC12CYPRESS SEMICONDUCTOR CORP3Longitude Flash Memory Solutions Ltd2CHEN CHANGYUAN1INVENTEC APPLIANCES CORP1
Top patents by PatentIndex Score
23 records- 0193US7403418B2Word line voltage boosting circuit and a memory array incorporating sameSILICON STORAGE TECH INC·Filed 2005·Granted Jul 22, 2008·42 cites·14 claims
- 0292US7247907B2Bidirectional split gate NAND flash memory structure and array, method of programming, erasing and reading thereof, and method of manufacturingSILICON STORAGE TECH INC·Filed 2005·Granted Jul 24, 2007·24 cites·18 claims
- 0392US7050316B1Differential non-volatile content addressable memory cell and array using phase changing resistor storage elementsSILICON STORAGE TECH INC·Filed 2004·Granted May 23, 2006·78 cites·10 claims
- 0490US9570458B2Gate fringing effect based channel formation for semiconductor deviceCYPRESS SEMICONDUCTOR CORP·Filed 2014·Granted Feb 14, 2017·5 cites·14 claims
- 0584US8692310B2Gate fringing effect based channel formation for semiconductor deviceSUH YOUSEOK·Filed 2009·Granted Apr 8, 2014·10 cites·14 claims
- 0683US7544569B2Bidirectional split gate NAND flash memory structure and array, method of programming, erasing and reading thereof, and method of manufacturingSILICON STORAGE TECH INC·Filed 2006·Granted Jun 9, 2009·9 cites·14 claims
- 0781US7242051B2Split gate NAND flash memory structure and array, method of programming, erasing and reading thereof, and method of manufacturingSILICON STORAGE TECH INC·Filed 2005·Granted Jul 10, 2007·9 cites·23 claims
- 0878US7723774B2Non-diffusion junction split-gate nonvolatile memory cells and arrays, methods of programming, erasing, and reading thereof, and methods of manufactureSILICON STORAGE TECH INC·Filed 2007·Granted May 25, 2010·6 cites·46 claims
- 0977US8780642B2Split gate NAND flash memory structure and array, method of programming, erasing and reading thereof, and method of manufacturingWIDJAJA YUNIARTO·Filed 2010·Granted Jul 15, 2014·4 cites·2 claims
- 1076US11950412B2Gate fringing effect based channel formation for semiconductor deviceLongitude Flash Memory Solutions Ltd·Filed 2022·Granted Apr 2, 2024·0 cites·20 claims
- 1175US8638609B2Partial local self boosting for NANDLIN YA-FEN·Filed 2010·Granted Jan 28, 2014·6 cites·20 claims
- 1271US8164135B2Non-diffusion junction split-gate nonvolatile memory cells and arrays, methods of programming, erasing, and reading thereof, and methods of manufactureCHEN CHANGYUAN·Filed 2010·Granted Apr 24, 2012·3 cites·30 claims
- 1369US9449693B2Split gate NAND flash memory structure and array, method of programming, erasing and reading thereof, and method of manufacturingSILICON STORAGE TECH INC·Filed 2014·Granted Sep 20, 2016·2 cites·3 claims
- 1463US11251189B2Gate fringing effect based channel formation for semiconductor deviceLongitude Flash Memory Solutions Ltd·Filed 2019·Granted Feb 15, 2022·0 cites·24 claims
- 1563US7351613B2Method of trimming semiconductor elements with electrical resistance feedbackSILICON STORAGE TECH INC·Filed 2004·Granted Apr 1, 2008·7 cites·12 claims
- 1662US7826267B2Method and apparatus for reading and programming a non-volatile memory cell in a virtual ground arraySILICON STORAGE TECH INC·Filed 2008·Granted Nov 2, 2010·5 cites·22 claims
- 1758US10297606B2Gate fringing effect based channel formation for semiconductor deviceCYPRESS SEMICONDUCTOR CORP·Filed 2017·Granted May 21, 2019·0 cites·12 claims
- 1857US9514824B2Partial local self boosting for NANDCYPRESS SEMICONDUCTOR CORP·Filed 2013·Granted Dec 6, 2016·1 cites·16 claims
- 1954US7790518B2Method of trimming semiconductor elements with electrical resistance feedbackSILICON STORAGE TECH INC·Filed 2008·Granted Sep 7, 2010·0 cites·13 claims
- 2049US9892790B2Method of programming a continuous-channel flash memory deviceSILICON STORAGE TECH INC·Filed 2016·Granted Feb 13, 2018·0 cites·3 claims
- 2145US2006166661A1Wireless communication device having a telephone number-limited back calling functionINVENTEC APPLIANCES CORP·Filed 2005·Application pending·0 cites
- 2243US7848146B2Partial local self-boosting of a memory cell channelSPANSION LLC·Filed 2009·Granted Dec 7, 2010·1 cites·20 claims
- 2343US7808839B2Split gate NAND flash memory structure and array, method of programming, erasing and reading thereof, and method of manufacturingSILICON STORAGE TECH INC·Filed 2007·Granted Oct 5, 2010·0 cites·10 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →