Inventor · disambiguated record
Changyuan Chen
Also filed as: CHEN CHANGYUAN
38 granted patents·5 pending applications·431 citations·filing 2004–2024
98Inventor score
Files withSANDISK TECHNOLOGIES LLC10SILICON STORAGE TECH INC10SANDISK TECHNOLOGIES INC9WESTERN DIGITAL TECH INC8CHEN CHANGYUAN3
Top patents by PatentIndex Score
43 records- 0198US8886877B1In-situ block folding for nonvolatile memorySANDISK TECHNOLOGIES INC·Filed 2014·Granted Nov 11, 2014·80 cites·23 claims
- 0297US9704588B1Apparatus and method for preconditioning currents to reduce errors in sensing for non-volatile memorySANDISK TECHNOLOGIES LLC·Filed 2016·Granted Jul 11, 2017·26 cites·20 claims
- 0396US9543028B2Word line dependent temperature compensation scheme during sensing to counteract cross-temperature effectSANDISK TECHNOLOGIES INC·Filed 2014·Granted Jan 10, 2017·25 cites·20 claims
- 0495US10008273B2Cell current based bit line voltageSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Jun 26, 2018·21 cites·20 claims
- 0595US9972396B1System and method for programming a memory device with multiple writes without an intervening eraseWESTERN DIGITAL TECH INC·Filed 2017·Granted May 15, 2018·37 cites·29 claims
- 0695US9711231B1System solution for first read issue using time dependent read voltagesSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Jul 18, 2017·25 cites·20 claims
- 0794US9530512B2Temperature dependent sensing scheme to counteract cross-temperature threshold voltage distribution wideningSANDISK TECHNOLOGIES INC·Filed 2014·Granted Dec 27, 2016·32 cites·20 claims
- 0893US8174895B2Programming non-volatile storage with fast bit detection and verify skipCHEN CHANGYUAN·Filed 2009·Granted May 8, 2012·29 cites·32 claims
- 0992US10566059B2Three dimensional NAND memory device with drain select gate electrode shared between multiple stringsSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Feb 18, 2020·13 cites·15 claims
- 1092US9704595B1Self-detecting a heating event to non-volatile storageSANDISK TECHNOLOGIES INC·Filed 2016·Granted Jul 11, 2017·14 cites·20 claims
- 1192US7247907B2Bidirectional split gate NAND flash memory structure and array, method of programming, erasing and reading thereof, and method of manufacturingSILICON STORAGE TECH INC·Filed 2005·Granted Jul 24, 2007·24 cites·18 claims
- 1288US10304551B2Erase speed based word line controlSANDISK TECHNOLOGIES LLC·Filed 2016·Granted May 28, 2019·9 cites·12 claims
- 1388US8456915B2Programming non-volatile storage with fast bit detection and verify skipCHEN CHANGYUAN·Filed 2012·Granted Jun 4, 2013·10 cites·16 claims
- 1487US10304559B2Memory write verification using temperature compensationWESTERN DIGITAL TECH INC·Filed 2016·Granted May 28, 2019·10 cites·20 claims
- 1583US9201788B1In-situ block folding for nonvolatile memorySANDISK TECHNOLOGIES INC·Filed 2014·Granted Dec 1, 2015·5 cites·20 claims
- 1683US7544569B2Bidirectional split gate NAND flash memory structure and array, method of programming, erasing and reading thereof, and method of manufacturingSILICON STORAGE TECH INC·Filed 2006·Granted Jun 9, 2009·9 cites·14 claims
- 1782US9472270B2Nonvolatile storage reflow detectionSANDISK TECHNOLOGIES INC·Filed 2014·Granted Oct 18, 2016·6 cites·27 claims
- 1881US7242051B2Split gate NAND flash memory structure and array, method of programming, erasing and reading thereof, and method of manufacturingSILICON STORAGE TECH INC·Filed 2005·Granted Jul 10, 2007·9 cites·23 claims
- 1979US10636501B1Memory device with reduced neighbor word line interference using adjustable voltage on source-side unselected word lineSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Apr 28, 2020·4 cites·20 claims
- 2078US10074440B2Erase for partially programmed blocks in non-volatile memorySANDISK TECHNOLOGIES LLC·Filed 2016·Granted Sep 11, 2018·4 cites·17 claims
- 2178US7723774B2Non-diffusion junction split-gate nonvolatile memory cells and arrays, methods of programming, erasing, and reading thereof, and methods of manufactureSILICON STORAGE TECH INC·Filed 2007·Granted May 25, 2010·6 cites·46 claims
- 2277US10818366B2Post write erase conditioningWESTERN DIGITAL TECH INC·Filed 2020·Granted Oct 27, 2020·1 cites·20 claims
- 2377US8780642B2Split gate NAND flash memory structure and array, method of programming, erasing and reading thereof, and method of manufacturingWIDJAJA YUNIARTO·Filed 2010·Granted Jul 15, 2014·4 cites·2 claims
- 2474US10553294B2Post write erase conditioningWESTERN DIGITAL TECH INC·Filed 2019·Granted Feb 4, 2020·2 cites·19 claims
- 2571US8164135B2Non-diffusion junction split-gate nonvolatile memory cells and arrays, methods of programming, erasing, and reading thereof, and methods of manufactureCHEN CHANGYUAN·Filed 2010·Granted Apr 24, 2012·3 cites·30 claims
- 2669US9449693B2Split gate NAND flash memory structure and array, method of programming, erasing and reading thereof, and method of manufacturingSILICON STORAGE TECH INC·Filed 2014·Granted Sep 20, 2016·2 cites·3 claims
- 2768US10978145B2Programming to minimize cross-temperature threshold voltage wideningSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Apr 13, 2021·2 cites·20 claims
- 2867USRE46056EProgramming non-volatile storage with fast bit detection and verify skipSANDISK TECHNOLOGIES INC·Filed 2014·Granted Jul 5, 2016·2 cites·44 claims
- 2965US7358559B2Bi-directional read/program non-volatile floating gate memory array, and method of formationSILICON STORAGE TECH INC·Filed 2005·Granted Apr 15, 2008·3 cites·13 claims
- 3064US8830745B2Memory system with unverified program stepSANDISK TECHNOLOGIES INC·Filed 2013·Granted Sep 9, 2014·3 cites·20 claims
- 3162US10269439B2Post write erase conditioningWESTERN DIGITAL TECH INC·Filed 2017·Granted Apr 23, 2019·1 cites·19 claims
- 3262US7826267B2Method and apparatus for reading and programming a non-volatile memory cell in a virtual ground arraySILICON STORAGE TECH INC·Filed 2008·Granted Nov 2, 2010·5 cites·22 claims
- 3359US10204689B1Non-volatile memory with methods to reduce creep-up field between dummy control gate and select gateSANDISK TECHNOLOGIES LLC·Filed 2017·Granted Feb 12, 2019·1 cites·20 claims
- 3459US2025323231A1Adaptable memory system with multiple chipletsWESTERN DIGITAL TECH INC·Filed 2024·Application pending·0 cites
- 3556US9583206B2Data storage device having reflow awarenessSANDISK TECHNOLOGIES INC·Filed 2014·Granted Feb 28, 2017·1 cites·20 claims
- 3656US7961511B2Hybrid programming methods and systems for non-volatile memory storage elementsSANDISK CORP·Filed 2006·Granted Jun 14, 2011·3 cites·3 claims
- 3750US2009096507A1Integrated Semiconductor Metal-Insulator-Semiconductor CapacitorSILICON STORAGE TECH INC·Filed 2008·Application pending·0 cites
- 3849US9892790B2Method of programming a continuous-channel flash memory deviceSILICON STORAGE TECH INC·Filed 2016·Granted Feb 13, 2018·0 cites·3 claims
- 3949US2025054550A1Non-volatile memory with sub-block mode and full block modeWESTERN DIGITAL TECH INC·Filed 2023·Application pending·0 cites
- 4043US7808839B2Split gate NAND flash memory structure and array, method of programming, erasing and reading thereof, and method of manufacturingSILICON STORAGE TECH INC·Filed 2007·Granted Oct 5, 2010·0 cites·10 claims
- 4140US2021104280A1Method of reducing neighboring word-line interferenceSANDISK TECHNOLOGIES LLC·Filed 2019·Application pending·0 cites
- 4239US2006017084A1Integrated semiconductor metal-insulator-semiconductor capacitorGAO FENG·Filed 2004·Application pending·0 cites
- 4336US10535411B2System and method for string-based erase verify to create partial good blocksWESTERN DIGITAL TECH INC·Filed 2017·Granted Jan 14, 2020·0 cites·18 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →