Inventor · disambiguated record
Suk-Hun Choi
Also filed as: CHOI SUK-HUN
24 granted patents·16 pending applications·331 citations·filing 2004–2013
96Inventor score
Top patents by PatentIndex Score
40 records- 0196US8575753B2Semiconductor device having a conductive structure including oxide and non oxide portionsCHOI SUK-HUN·Filed 2010·Granted Nov 5, 2013·43 cites·32 claims
- 0296US7291556B2Method for forming small features in microelectronic devices using sacrificial layersSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Nov 6, 2007·118 cites·28 claims
- 0394US8921940B2Semiconductor device and a method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Dec 30, 2014·20 cites·11 claims
- 0491US8034705B2Method of forming a seam-free tungsten plugSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Oct 11, 2011·22 cites·6 claims
- 0590US7223693B2Methods for fabricating memory devices using sacrificial layers and memory devices fabricated by sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted May 29, 2007·21 cites·43 claims
- 0688US7803657B2Method of manufacturing a variable resistance structure and method of manufacturing a phase-change memory device using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Sep 28, 2010·13 cites·16 claims
- 0788US7666789B2Method of manufacturing a variable resistance structure and method of manufacturing a phase-change memory device using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Feb 23, 2010·14 cites·20 claims
- 0884US8580648B2Capacitor having an electrode structure, method of manufacturing a capacitor having an electrode structure and semiconductor device having an electrode structureCHOI SUK-HUN·Filed 2011·Granted Nov 12, 2013·8 cites·2 claims
- 0982US8288289B2Method of fabricating semiconductor deviceJEONG JUN-HO·Filed 2011·Granted Oct 16, 2012·8 cites·20 claims
- 1081US7678625B2Methods of fabricating semiconductor devices including channel layers having improved defect density and surface roughness characteristicsSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Mar 16, 2010·8 cites·19 claims
- 1177US8168521B2Methods of manufacturing semiconductor devices having low resistance buried gate structuresJEON IN-SANG·Filed 2010·Granted May 1, 2012·7 cites·12 claims
- 1276US8723297B2Memory deviceSON YOON-HO·Filed 2011·Granted May 13, 2014·5 cites·15 claims
- 1376US8148710B2Phase-change memory device using a variable resistance structureCHOI SUK-HUN·Filed 2010·Granted Apr 3, 2012·3 cites·11 claims
- 1475US7265050B2Methods for fabricating memory devices using sacrificial layersSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Sep 4, 2007·21 cites·17 claims
- 1569US8357613B2Methods of fabricating semiconductor devices and semiconductor devices including a contact plug processed by rapid thermal annealingSAMSUNG ELECTRONICS CO LTD·Filed 2010·Granted Jan 22, 2013·6 cites·13 claims
- 1669US8008172B2Methods of forming semiconductor devices including multistage planarization and crystalization of a semiconductor layerSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Aug 30, 2011·3 cites·14 claims
- 1768US8168535B2Method fabricating semiconductor device using multiple polishing processesBAE JUN-SOO·Filed 2011·Granted May 1, 2012·2 cites·20 claims
- 1866US7867902B2Methods of forming a contact structureSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Jan 11, 2011·3 cites·17 claims
- 1964US7622379B2Methods of forming metal contact structures and methods of fabricating phase-change memory devices using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Nov 24, 2009·3 cites·15 claims
- 2063US8124526B2Methods of forming a thin ferroelectric layer and methods of manufacturing a semiconductor device including the sameCHOI SUK-HUN·Filed 2009·Granted Feb 28, 2012·1 cites·16 claims
- 2163US7517703B2Method for forming ferroelectric memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Apr 14, 2009·2 cites·9 claims
- 2251US7612359B2Microelectronic devices using sacrificial layers and structures fabricated by sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Nov 3, 2009·0 cites·12 claims
- 2349US2008128853A1Non-Volatile Memory Devices with Discrete Resistive Memory Material Regions and Methods of Fabricating the SameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 2448US7932163B2Methods of forming stacked semiconductor devices with single-crystal semiconductor regionsSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Apr 26, 2011·0 cites·17 claims
- 2545US9034742B2Method for fabricating semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted May 19, 2015·0 cites·20 claims
- 2645US2008048226A1Direct cell via structures for ferroelectric random access memory devices and methods of fabricating such structuresSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 2745US2008124930A1Methods of recycling a substrate including using a chemical mechanical polishing processSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 2844US2011081762A1Methods of fabricating non-volatile memory devices with discrete resistive memory material regionsSAMSUNG ELECTRONICS CO LTD·Filed 2010·Application pending·0 cites
- 2944US2009146304A1Carbon nanotube integrated circuit devices and methods of fabrication therefor using protected catalyst layersSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 3043US2007284743A1Fabricating Memory Devices Using Sacrificial Layers and Memory Devices Fabricated by SameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 3142US2006076641A1Methods of fabricating phase changeable semiconductor memory devices including multi-plug conductive structures and related devicesSAMSUNG ELECTRONICS CO LTD·Filed 2005·Application pending·0 cites
- 3242US2006183250A1Methods of fabricating ferroelectric capacitors utilizing a partial chemical mechanical polishing processSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 3342US2008164503A1Ferroelectric Memory Devices Having a Protruding Bottom Electrode and Methods of Forming the SameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Application pending·0 cites
- 3441US2009302302A1Metal oxide resistive memory and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2009·Application pending·0 cites
- 3539US2006027848A1Ferroelectric memory device and method of forming the sameSON YOON-HO·Filed 2005·Application pending·0 cites
- 3638US2006263909A1Methods of fabricating thin ferroelectric layers and capacitors having ferroelectric dielectric layers thereinCHOI SUK-HUN·Filed 2006·Application pending·0 cites
- 3738US2007212797A1Method of forming a ferroelectric deviceCHOI SUK-HUN·Filed 2007·Application pending·0 cites
- 3838US2006263289A1Metal oxide resistive memory and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 3935US2008247219A1Resistive Random Access Memory Devices Including Sidewall Resistive Layers and Related MethodsSAMSUNG ELECTRONICS CO LTD·Filed 2008·Application pending·0 cites
- 4035US2010213541A1Semiconductor device having recess channel structureSAMSUNG ELECTRONICS CO LTD·Filed 2010·Application pending·0 cites
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