Inventor · disambiguated record
Peijie Feng
Also filed as: FENG PEIJIE
18 granted patents·12 pending applications·22 citations·filing 2012–2023
89Inventor score
Top patents by PatentIndex Score
30 records- 0195US11502079B2Integrated device comprising a CMOS structure comprising well-less transistorsQUALCOMM INC·Filed 2020·Granted Nov 15, 2022·4 cites·26 claims
- 0288US11257917B2Gate-all-around (GAA) transistors with additional bottom channel for reduced parasitic capacitance and methods of fabricationQUALCOMM INC·Filed 2020·Granted Feb 22, 2022·2 cites·24 claims
- 0383US9406752B2FinFET conformal junction and high EPI surface dopant concentration method and deviceGLOBALFOUNDRIES INC·Filed 2015·Granted Aug 2, 2016·3 cites·13 claims
- 0483US8907378B2High electron mobility transistor with multiple channelsMITSUBISHI ELECTRIC RES LAB·Filed 2013·Granted Dec 9, 2014·7 cites·10 claims
- 0581US11380685B2Semiconductor device with superlattice finQUALCOMM INC·Filed 2020·Granted Jul 5, 2022·1 cites·20 claims
- 0674US8624667B2High electron mobility transistors with multiple channelsTEO KOON HOO·Filed 2012·Granted Jan 7, 2014·4 cites·18 claims
- 0770US9577040B2FinFET conformal junction and high epi surface dopant concentration method and deviceGLOBALFOUNDRIES INC·Filed 2016·Granted Feb 21, 2017·1 cites·20 claims
- 0861US11545555B2Gate-all-around (GAA) transistors with shallow source/drain regions and methods of fabricating the sameQUALCOMM INC·Filed 2020·Granted Jan 3, 2023·0 cites·29 claims
- 0960US10763364B1Circuits having a diffusion break with avoided or reduced adjacent semiconductor channel strain relaxation, and related methodsQUALCOMM INC·Filed 2020·Granted Sep 1, 2020·0 cites·19 claims
- 1057US2025096075A1Memory cell structures using full backside connectivityQUALCOMM INC·Filed 2023·Application pending·0 cites
- 1156US11387335B2Optimized contact structureQUALCOMM INC·Filed 2020·Granted Jul 12, 2022·0 cites·39 claims
- 1255US2024371924A1Enhanced-shaped extension region(s) for gate-all-around (gaa) field effect transistor (fet) device, and related fabrication methodsQUALCOMM INC·Filed 2023·Application pending·0 cites
- 1355US2024429236A1Variable vertical-stack nanosheet for gate-all-around devicesQUALCOMM INC·Filed 2023·Application pending·0 cites
- 1455US2024421209A1Semiconductor devices with different gate dielectric thicknessesQUALCOMM INC·Filed 2023·Application pending·0 cites
- 1555US2024429300A1GATE-ALL-AROUND (GAA) FIELD-EFFECT TRANSISTOR (FET) DEVICE HAVING FETs WITH DIFFERENT CRYSTALLINE ORIENTATION CHANNELS THROUGH A SUBSTRATEQUALCOMM INC·Filed 2023·Application pending·0 cites
- 1654US9559176B2FinFET conformal junction and abrupt junction with reduced damage method and deviceGLOBALFOUNDRIES INC·Filed 2016·Granted Jan 31, 2017·0 cites·20 claims
- 1753US10700204B2Circuits having a diffusion break with avoided or reduced adjacent semiconductor channel strain relaxation, and related methodsQUALCOMM INC·Filed 2018·Granted Jun 30, 2020·0 cites·25 claims
- 1851US11189617B2Gate-all-around devices with reduced parasitic capacitanceQUALCOMM INC·Filed 2020·Granted Nov 30, 2021·0 cites·20 claims
- 1950US11411092B2Field effect transistor (FET) comprising inner spacers and voids between channelsQUALCOMM INC·Filed 2020·Granted Aug 9, 2022·0 cites·30 claims
- 2050US9397162B1FinFET conformal junction and abrupt junction with reduced damage method and deviceGLOBALFOUNDRIES INC·Filed 2015·Granted Jul 19, 2016·0 cites·15 claims
- 2149US11437379B2Field-effect transistors (FET) circuits employing topside and backside contacts for topside and backside routing of FET power and logic signals, and related complementary metal oxide semiconductor (CMOS) circuitsQUALCOMM INC·Filed 2020·Granted Sep 6, 2022·0 cites·21 claims
- 2246US11855198B2Multi-gate high electron mobility transistors (HEMTs) employing tuned recess depth gates for improved device linearityQUALCOMM INC·Filed 2020·Granted Dec 26, 2023·0 cites·9 claims
- 2346US2021305155A1Via zero interconnect layer metal resistor integrationQUALCOMM INC·Filed 2020·Application pending·0 cites
- 2444US2021233909A1Flexible gaa nanosheet height and channel materialsQUALCOMM INC·Filed 2020·Application pending·0 cites
- 2543US2020066858A1High performance thin film transistor with negative index materialQUALCOMM INC·Filed 2018·Application pending·0 cites
- 2643US2021028115A1Low parasitic middle-of-line schemeQUALCOMM INC·Filed 2019·Application pending·0 cites
- 2742US10686031B2Finger metal-oxide-metal (FMOM) capacitorQUALCOMM INC·Filed 2018·Granted Jun 16, 2020·0 cites·11 claims
- 2840US2020234999A1Gaps in transistor gate metalQUALCOMM INC·Filed 2019·Application pending·0 cites
- 2938US2017207313A1NANOWIRE METAL-OXIDE SEMICONDUCTOR (MOS) FIELD-EFFECT TRANSISTORS (FETs) (MOSFETs) EMPLOYING A NANOWIRE CHANNEL STRUCTURE EMPLOYING RECESSED CONDUCTIVE STRUCTURES FOR CONDUCTIVELY COUPLING NANOWIRE STRUCTURESQUALCOMM INC·Filed 2016·Application pending·0 cites
- 3037US2017170268A1NANOWIRE METAL-OXIDE SEMICONDUCTOR (MOS) FIELD-EFFECT TRANSISTORS (FETs) (MOSFETs) EMPLOYING A NANOWIRE CHANNEL STRUCTURE HAVING ROUNDED NANOWIRE STRUCTURESQUALCOMM INC·Filed 2016·Application pending·0 cites
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →