Inventor · disambiguated record
Takeshi Miyajima
Also filed as: MIYAJIMA TAKESHI
30 granted patents·1,471 citations·filing 1982–2020
97Inventor score
Files withDENSO CORP17HITACHI CONSTRUCTION MACHINERY5NIPPON DENSO CO5MIYAJIMA TAKESHI2TOYOTA MOTOR CO LTD1
Top patents by PatentIndex Score
30 records- 0198US5976936ASilicon carbide semiconductor deviceDENSO CORP·Filed 1997·Granted Nov 2, 1999·275 cites·10 claims
- 0297US6020600ASilicon carbide semiconductor device with trenchNIPPON DENSO CO·Filed 1997·Granted Feb 1, 2000·211 cites·13 claims
- 0397US5915180AProcess for producing a semiconductor device having a single thermal oxidizing stepDENSO CORP·Filed 1995·Granted Jun 22, 1999·217 cites·13 claims
- 0496US6703707B1Semiconductor device having radiation structureDENSO CORP·Filed 2000·Granted Mar 9, 2004·151 cites·57 claims
- 0595US6133587ASilicon carbide semiconductor device and process for manufacturing sameDENSO CORP·Filed 1998·Granted Oct 17, 2000·156 cites·7 claims
- 0693US5744826ASilicon carbide semiconductor device and process for its productionDENSO CORP·Filed 1997·Granted Apr 28, 1998·123 cites·4 claims
- 0783US5696396ASemiconductor device including vertical MOSFET structure with suppressed parasitic diode operationNIPPON DENSO CO·Filed 1996·Granted Dec 9, 1997·59 cites·28 claims
- 0882US8421154B2Semiconductor device having super junction structure and method for manufacturing the sameMIYAJIMA TAKESHI·Filed 2011·Granted Apr 16, 2013·4 cites·11 claims
- 0979US5723376AMethod of manufacturing SiC semiconductor device having double oxide film formation to reduce film defectsNIPPON DENSO CO·Filed 1996·Granted Mar 3, 1998·46 cites·16 claims
- 1077US7932132B2Semiconductor device and method of manufacturing the sameDENSO CORP·Filed 2009·Granted Apr 26, 2011·6 cites·44 claims
- 1174US4484475AMethod of measuring contact stress at contacting surfaces of abutting solid massesHITACHI CONSTRUCTION MACHINERY·Filed 1982·Granted Nov 27, 1984·27 cites·11 claims
- 1273US8106453B2Semiconductor device having super junction structureMIYAJIMA TAKESHI·Filed 2007·Granted Jan 31, 2012·3 cites·4 claims
- 1371US6809348B1Semiconductor device and method for manufacturing the sameDENSO CORP·Filed 2000·Granted Oct 26, 2004·19 cites·34 claims
- 1470US9368575B2Semiconductor device having super junction structure and method for manufacturing the sameDENSO CORP·Filed 2013·Granted Jun 14, 2016·1 cites·6 claims
- 1570US6476458B2Semiconductor device capable of enhancing a withstand voltage at a peripheral region around an element in comparison with a withstand voltage at the elementDENSO CORP·Filed 2001·Granted Nov 5, 2002·16 cites·17 claims
- 1669US6548386B1Method for forming and patterning filmDENSO CORP·Filed 2000·Granted Apr 15, 2003·19 cites·48 claims
- 1768US7858475B2Method for manufacturing a vertical transistor that includes a super junction structureDENSO CORP·Filed 2009·Granted Dec 28, 2010·3 cites·20 claims
- 1865US4881056AFacedown-type semiconductor pressure sensor with spacerNIPPON DENSO CO·Filed 1988·Granted Nov 14, 1989·22 cites·28 claims
- 1964US5005420AUltrasonic method for measurement of depth of surface opening flaw in solid massHITACHI CONSTRUCTION MACHINERY·Filed 1987·Granted Apr 9, 1991·22 cites·4 claims
- 2064US4914952AUltrasonic method for measurement of size of any flaw within solid massHITACHI CONSTRUCTION MACHINERY·Filed 1988·Granted Apr 10, 1990·24 cites·1 claims
- 2159US7635622B2Method for manufacturing a vertical transistor that includes a super junction structureDENSO CORP·Filed 2007·Granted Dec 22, 2009·1 cites·43 claims
- 2257US8659082B2Method for manufacturing a semiconductor device having super junction structureDENSO CORP·Filed 2013·Granted Feb 25, 2014·0 cites·9 claims
- 2357US4785667AMethod of measuring inclining angle of planar defect of solid material by ultrasonic waveHITACHI CONSTRUCTION MACHINERY·Filed 1985·Granted Nov 22, 1988·23 cites·7 claims
- 2453US8018028B2Semiconductor device and method for manufacturing the sameDENSO CORP·Filed 2010·Granted Sep 13, 2011·1 cites·15 claims
- 2550US6133120ABoron-doped p-type single crystal silicon carbide semiconductor and process for preparing sameNIPPON DENSO CO·Filed 1996·Granted Oct 17, 2000·19 cites·16 claims
- 2648US8008768B2Semiconductor device having heat radiating configurationDENSO CORP·Filed 2011·Granted Aug 30, 2011·0 cites·4 claims
- 2748US4694698AMethod of measuring factor of stress concentration by utilizing ultrasoundHITACHI CONSTRUCTION MACHINERY·Filed 1985·Granted Sep 22, 1987·12 cites·6 claims
- 2847US11225217B2Airbag apparatusTOYOTA MOTOR CO LTD·Filed 2020·Granted Jan 18, 2022·0 cites·5 claims
- 2945US7910411B2Semiconductor device and method for manufacturing the sameDENSO CORP·Filed 2008·Granted Mar 22, 2011·1 cites·4 claims
- 3045US5998268AManufacturing method of semiconductor device with a grooveDENSO CORP·Filed 1997·Granted Dec 7, 1999·10 cites·25 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →