Inventor · disambiguated record
Bor Chiuan Hsieh
Also filed as: HSIEH BOR CHIUAN
22 granted patents·9 pending applications·395 citations·filing 2009–2025
94Inventor score
Top patents by PatentIndex Score
31 records- 0198US11053584B2System and method for supplying a precursor for an atomic layer deposition (ALD) processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 6, 2021·278 cites·20 claims
- 0296US7947551B1Method of forming a shallow trench isolation structureTAIWAN SEMICONDUCTOR MFG·Filed 2010·Granted May 24, 2011·49 cites·20 claims
- 0393US8609497B2Method of dual EPI process for semiconductor deviceCHUNG HAN-PIN·Filed 2010·Granted Dec 17, 2013·28 cites·20 claims
- 0489US10443127B2System and method for supplying a precursor for an atomic layer deposition (ALD) processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Oct 15, 2019·4 cites·24 claims
- 0589US9218974B2Sidewall free CESL for enlarging ILD gap-fill windowTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Dec 22, 2015·8 cites·20 claims
- 0687US8900957B2Method of dual epi process for semiconductor deviceTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Dec 2, 2014·7 cites·12 claims
- 0786US10157997B2FinFETs and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 18, 2018·4 cites·20 claims
- 0885US2025344422A1Dummy hybrid film for self alignment contact formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0983US8900956B2Method of dual EPI process for semiconductor deviceTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Dec 2, 2014·5 cites·20 claims
- 1082US12293947B2Gap patterning for metal-to-source/drain plugs in a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted May 6, 2025·0 cites·20 claims
- 1182US11355399B2Gap patterning for metal-to-source/drain plugs in a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 7, 2022·1 cites·20 claims
- 1281US2025261437A1Gap patterning for metal-to-source/drain plugs in a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1379US8299508B2CMOS structure with multiple spacersHSIEH BOR CHIUAN·Filed 2010·Granted Oct 30, 2012·9 cites·20 claims
- 1479US2025343051A1Method for forming a semiconductor device having a gate mask composing of a semiconductor layer over a dielectric layer formed on gate electrodeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1579US2024379815A1Dummy hybrid film for self alignment contact formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1678US11798984B2Seamless gap fillTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 24, 2023·0 cites·20 claims
- 1776US11842930B2Gap patterning for metal-to-source/drain plugs in a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 12, 2023·0 cites·20 claims
- 1875US2025323099A1Hybrid film scheme for self-aligned contactTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1973US12302595B2Dummy hybrid film for self-alignment contact formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 13, 2025·0 cites·20 claims
- 2073US10510867B2FinFETs and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 17, 2019·1 cites·20 claims
- 2172US11239310B2Seamless gap fillTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 1, 2022·0 cites·20 claims
- 2266US2023317469A1Semiconductor Device and Methods of Forming the SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 2364US8999834B2Sidewall-free CESL for enlarging ILD gap-fill windowTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Apr 7, 2015·1 cites·20 claims
- 2463US12417948B2Hybrid film scheme for self-aligned contactTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 16, 2025·0 cites·20 claims
- 2561US10672866B2Seamless gap fillTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 2, 2020·0 cites·20 claims
- 2658US12211924B2Semiconductor device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 28, 2025·0 cites·20 claims
- 2758US10084040B2Seamless gap fillTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Sep 25, 2018·0 cites·20 claims
- 2856US2024145302A1Semiconductor device and method for manufacturing interconnecting metal layer thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2949US2011084355A1Isolation Structure For Semiconductor DeviceTAIWAN SEMICONDUCTOR MFG·Filed 2009·Application pending·0 cites
- 3046US9437712B2High performance self aligned contacts and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Sep 6, 2016·0 cites·20 claims
- 3145US2010314690A1Sidewall-Free CESL for Enlarging ILD Gap-Fill WindowTAIWAN SEMICONDUCTOR MFG·Filed 2010·Application pending·0 cites
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