Inventor · disambiguated record
Mutsuo Morikado
Also filed as: MORIKADO MUTSUO
20 granted patents·8 pending applications·325 citations·filing 1994–2012
93Inventor score
Top patents by PatentIndex Score
28 records- 0196US5447884AShallow trench isolation with thin nitride linerIBM·Filed 1994·Granted Sep 5, 1995·264 cites·9 claims
- 0270US8369152B2Semiconductor memory device including charge accumulation layerTOSHIBA KK·Filed 2010·Granted Feb 5, 2013·3 cites·22 claims
- 0369US7145220B2Fin semiconductor device and method for fabricating the sameTOSHIBA KK·Filed 2004·Granted Dec 5, 2006·13 cites·10 claims
- 0467US8238159B2Non-volatile semiconductor storage device and method of controlling the sameMORIKADO MUTSUO·Filed 2010·Granted Aug 7, 2012·4 cites·20 claims
- 0563US7449375B2Fin semiconductor device and method for fabricating the sameTOSHIBA KK·Filed 2006·Granted Nov 11, 2008·2 cites·6 claims
- 0661US7750404B2Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2007·Granted Jul 6, 2010·2 cites·16 claims
- 0760US8013382B2NAND flash memory and method of manufacturing the sameTOSHIBA KK·Filed 2009·Granted Sep 6, 2011·1 cites·18 claims
- 0858US8358537B2Nonvolatile semiconductor memory deviceTOSHIBA KK·Filed 2011·Granted Jan 22, 2013·2 cites·20 claims
- 0958US7915680B2Semiconductor device and manufacturing method of the sameTOSHIBA KK·Filed 2006·Granted Mar 29, 2011·1 cites·6 claims
- 1056US8154069B2NAND flash memory with selection transistor having two-layer inter-layer insulation filmMORIKADO MUTSUO·Filed 2007·Granted Apr 10, 2012·1 cites·8 claims
- 1156US7433234B2Floating-body cell (FBC) semiconductor storage device having a buried electrode serving as gate electrode, and a surface electrode serving as plate electrodeTOSHIBA KK·Filed 2005·Granted Oct 7, 2008·1 cites·12 claims
- 1251US8017987B2Semiconductor memory device and method for manufacturing the sameTOSHIBA KK·Filed 2007·Granted Sep 13, 2011·0 cites·16 claims
- 1350US2009173983A1Semiconductor device and method of fabricating the sameTOSHIBA KK·Filed 2009·Application pending·0 cites
- 1449US6479368B1Method of manufacturing a semiconductor device having a shallow trench isolating regionTOSHIBA KK·Filed 1998·Granted Nov 12, 2002·16 cites·11 claims
- 1548US8362543B2Semiconductor nonvolatile memory device with inter-gate insulating film formed on the side surface of a memory cell and method for manufacturing the sameTOSHIBA KK·Filed 2008·Granted Jan 29, 2013·0 cites·12 claims
- 1648US5866946ASemiconductor device having a plug for diffusing hydrogen into a semiconductor substrateTOSHIBA KK·Filed 1996·Granted Feb 2, 1999·15 cites·12 claims
- 1747US8349720B2Nonvolatile semiconductor memory and manufacturing method thereofTOSHIBA KK·Filed 2012·Granted Jan 8, 2013·0 cites·8 claims
- 1846US8319270B2Semiconductor device and method for manufacturing the sameMORIKADO MUTSUO·Filed 2009·Granted Nov 27, 2012·0 cites·8 claims
- 1946US2007013007A1Semiconductor device and method of fabricating the sameTOSHIBA KK·Filed 2006·Application pending·0 cites
- 2045US8541285B2Semiconductor memory device and method for manufacturing the sameMORIKADO MUTSUO·Filed 2011·Granted Sep 24, 2013·0 cites·6 claims
- 2144US2011147841A1Semiconductor device and manufacturing method of the sameTOSHIBA KK·Filed 2011·Application pending·0 cites
- 2243US7583538B2Semiconductor memory and read method of the sameTOSHIBA KK·Filed 2007·Granted Sep 1, 2009·0 cites·17 claims
- 2338US8492825B2Nonvolatile semiconductor memory device and method of fabricating the sameMORIKADO MUTSUO·Filed 2011·Granted Jul 23, 2013·0 cites·11 claims
- 2437US2006138558A1Semiconductor memory device and method of fabricating the sameTOSHIBA KK·Filed 2005·Application pending·0 cites
- 2536US2011024824A1Nonvolatile semiconductor memory device and method for manufacturing sameTOSHIBA KK·Filed 2010·Application pending·0 cites
- 2635US2004188773A1Semiconductor device having bit-line contacts, and method of manufacturing the sameFiled 2004·Application pending·0 cites
- 2735US2010187593A1Nand flash memory and method for manufacturing the sameTOSHIBA KK·Filed 2010·Application pending·0 cites
- 2833US2011001180A1Nonvolatile semiconductor memory deviceMASUDA KAZUNORI·Filed 2010·Application pending·0 cites
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