Inventor · disambiguated record
Keith Doran Weeks
Also filed as: WEEKS KEITH D · WEEKS KEITH DORAN
43 granted patents·18 pending applications·2,939 citations·filing 2003–2025
98Inventor score
Top patents by PatentIndex Score
61 records- 0199US11978771B2Gate-all-around (GAA) device including a superlatticeATOMERA INC·Filed 2022·Granted May 7, 2024·7 cites·21 claims
- 0299US11848356B2Method for making semiconductor device including superlattice with oxygen and carbon monolayersATOMERA INC·Filed 2021·Granted Dec 19, 2023·6 cites·21 claims
- 0399US11837634B2Semiconductor device including superlattice with oxygen and carbon monolayersATOMERA INC·Filed 2021·Granted Dec 5, 2023·10 cites·21 claims
- 0499US11728385B2Semiconductor device including superlattice with O18 enriched monolayersATOMERA INC·Filed 2021·Granted Aug 15, 2023·7 cites·24 claims
- 0599US11721546B2Method for making semiconductor device with selective etching of superlattice to accumulate non-semiconductor atomsATOMERA INC·Filed 2021·Granted Aug 8, 2023·6 cites·20 claims
- 0699US11430869B2Method for making superlattice structures with reduced defect densitiesATOMERA INC·Filed 2020·Granted Aug 30, 2022·8 cites·13 claims
- 0799US10109479B1Method of making a semiconductor device with a buried insulating layer formed by annealing a superlatticeATOMERA INC·Filed 2017·Granted Oct 23, 2018·82 cites·23 claims
- 0899US9324811B2Structures and devices including a tensile-stressed silicon arsenic layer and methods of forming sameASM IP HOLDING BV·Filed 2013·Granted Apr 26, 2016·496 cites·10 claims
- 0999US7297641B2Method to form ultra high quality silicon-containing compound layersASM INC·Filed 2003·Granted Nov 20, 2007·625 cites·20 claims
- 1098US11923418B2Semiconductor device including a superlattice and enriched silicon 28 epitaxial layerATOMERA INC·Filed 2021·Granted Mar 5, 2024·7 cites·24 claims
- 1198US11810784B2Method for making semiconductor device including a superlattice and enriched silicon 28 epitaxial layerATOMERA INC·Filed 2021·Granted Nov 7, 2023·9 cites·27 claims
- 1298US11682712B2Method for making semiconductor device including superlattice with O18 enriched monolayersATOMERA INC·Filed 2021·Granted Jun 20, 2023·7 cites·24 claims
- 1398US11631584B1Method for making semiconductor device with selective etching of superlattice to define etch stop layerATOMERA INC·Filed 2021·Granted Apr 18, 2023·7 cites·20 claims
- 1498US11302823B2Method for making semiconductor device including a superlattice with different non-semiconductor material monolayersATOMERA INC·Filed 2020·Granted Apr 12, 2022·11 cites·21 claims
- 1598US11177351B2Semiconductor device including a superlattice with different non-semiconductor material monolayersATOMERA INC·Filed 2020·Granted Nov 16, 2021·16 cites·21 claims
- 1698US11075078B1Method for making a semiconductor device including a superlattice within a recessed etchATOMERA INC·Filed 2020·Granted Jul 27, 2021·21 cites·24 claims
- 1798US10811498B2Method for making superlattice structures with reduced defect densitiesATOMERA INC·Filed 2018·Granted Oct 20, 2020·35 cites·16 claims
- 1898US10727049B2Method for making a semiconductor device including compound semiconductor materials and an impurity and point defect blocking superlatticeATOMERA INC·Filed 2018·Granted Jul 28, 2020·30 cites·25 claims
- 1998US10566191B1Semiconductor device including superlattice structures with reduced defect densitiesATOMERA INC·Filed 2018·Granted Feb 18, 2020·51 cites·22 claims
- 2098US10468245B2Semiconductor device including compound semiconductor materials and an impurity and point defect blocking superlatticeATOMERA INC·Filed 2018·Granted Nov 5, 2019·46 cites·25 claims
- 2198US9099423B2Doped semiconductor films and processingASM IP HOLDING BV·Filed 2013·Granted Aug 4, 2015·414 cites·28 claims
- 2298US8278176B2Selective epitaxial formation of semiconductor filmsBAUER MATTHIAS·Filed 2006·Granted Oct 2, 2012·559 cites·19 claims
- 2398US7964513B2Method to form ultra high quality silicon-containing compound layersASM INC·Filed 2009·Granted Jun 21, 2011·75 cites·19 claims
- 2498US7651953B2Method to form ultra high quality silicon-containing compound layersASM INC·Filed 2007·Granted Jan 26, 2010·79 cites·24 claims
- 2597US7438760B2Methods of making substitutionally carbon-doped crystalline Si-containing materials by chemical vapor depositionASM INC·Filed 2006·Granted Oct 21, 2008·37 cites·31 claims
- 2696US9312131B2Selective epitaxial formation of semiconductive filmsBAUER MATTHIAS·Filed 2012·Granted Apr 12, 2016·38 cites·8 claims
- 2796US7816236B2Selective deposition of silicon-containing filmsASM INC·Filed 2006·Granted Oct 19, 2010·42 cites·34 claims
- 2895US12046470B2Method for making semiconductor device including a superlattice and enriched silicon 28 epitaxial layerATOMERA INC·Filed 2023·Granted Jul 23, 2024·1 cites·27 claims
- 2995US7294582B2Low temperature silicon compound depositionASM INT·Filed 2005·Granted Nov 13, 2007·116 cites·44 claims
- 3091US8088223B2System for control of gas injectorsTODD MICHAEL A·Filed 2006·Granted Jan 3, 2012·14 cites·15 claims
- 3191US7901968B2Heteroepitaxial deposition over an oxidized surfaceASM INC·Filed 2006·Granted Mar 8, 2011·16 cites·16 claims
- 3291US2025048701A1Method for making gate-all-around (gaa) device including a superlatticeATOMERA INC·Filed 2024·Application pending·0 cites
- 3389US12119380B2Method for making semiconductor device including superlattice with oxygen and carbon monolayersATOMERA INC·Filed 2023·Granted Oct 15, 2024·0 cites·15 claims
- 3488US12322594B2Method for making semiconductor device including a superlattice and enriched silicon 28 epitaxial layerATOMERA INC·Filed 2024·Granted Jun 3, 2025·0 cites·20 claims
- 3588US2024194740A1Gate-all-around (gaa) device including a superlatticeATOMERA INC·Filed 2024·Application pending·0 cites
- 3687US7029995B2Methods for depositing amorphous materials and using them as templates for epitaxial films by solid phase epitaxyASM INC·Filed 2004·Granted Apr 18, 2006·39 cites·36 claims
- 3784US12142641B2Method for making gate-all-around (GAA) device including a superlatticeATOMERA INC·Filed 2022·Granted Nov 12, 2024·0 cites·21 claims
- 3884US2025273460A1Method for making semiconductor device including a superlattice and enriched silicon 28 epitaxial layerATOMERA INC·Filed 2025·Application pending·0 cites
- 3983US12477798B2Semiconductor device including a superlattice and enriched silicon 28 epitaxial layerATOMERA INC·Filed 2024·Granted Nov 18, 2025·0 cites·8 claims
- 4081US12315723B2Method for making semiconductor device with selective etching of superlattice to accumulate non-semiconductor atomsATOMERA INC·Filed 2023·Granted May 27, 2025·0 cites·20 claims
- 4181US7648690B2Methods of making substitutionally carbon-doped crystalline Si-containing materials by chemical vapor depositionASM INC·Filed 2008·Granted Jan 19, 2010·4 cites·27 claims
- 4281US7005160B2Methods for depositing polycrystalline films with engineered grain structuresASM INC·Filed 2003·Granted Feb 28, 2006·18 cites·41 claims
- 4381US2025107192A1Semiconductor device including superlattice with o18 enriched monolayersATOMERA INC·Filed 2024·Application pending·0 cites
- 4481US2025259841A1Method for making semiconductor device with selective etching of superlattice to accumulate non-semiconductor atomsATOMERA INC·Filed 2025·Application pending·0 cites
- 4580US12199148B2Semiconductor device including superlattice with O18 enriched monolayersATOMERA INC·Filed 2023·Granted Jan 14, 2025·0 cites·28 claims
- 4679US12315722B2Method for making a radio frequency silicon-on-insulator (RFSOI) wafer including a superlatticeATOMERA INC·Filed 2024·Granted May 27, 2025·0 cites·19 claims
- 4777US2025105021A1Method for making a semiconductor device using superlattices with different non-semiconductor thermal stabilitiesATOMERA INC·Filed 2024·Application pending·0 cites
- 4875US2025259840A1Method for making a radio frequency silicon-on-insulator (rfsoi) wafer including a superlatticeATOMERA INC·Filed 2025·Application pending·0 cites
- 4974US2024371883A1Methods for making semiconductor devices including localized semiconductor-on-insulator (soi) regionsATOMERA INC·Filed 2024·Application pending·0 cites
- 5074US2024371943A1Semiconductor devices including localized semiconductor-on-insulator (soi) regionsATOMERA INC·Filed 2024·Application pending·0 cites
Showing the top 50 of 61 patent records by PatentIndex Score.
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