Inventor · disambiguated record
Armin Willmeroth
Also filed as: WILLMEROTH ARMIN
118 granted patents·20 pending applications·721 citations·filing 2001–2024
99Inventor score
Files withINFINEON TECHNOLOGIES AUSTRIA51INFINEON TECHNOLOGIES AUSTRIA AG28INFINEON TECHNOLOGIES AG22WILLMEROTH ARMIN12MAUDER ANTON6
Top patents by PatentIndex Score
138 records- 0199US8569842B2Semiconductor device arrangement with a first semiconductor device and with a plurality of second semiconductor devicesWEIS ROLF·Filed 2011·Granted Oct 29, 2013·83 cites·30 claims
- 0297US8970262B2Semiconductor device arrangement with a first semiconductor device and with a plurality of second semiconductor devicesWEIS ROLF·Filed 2012·Granted Mar 3, 2015·28 cites·25 claims
- 0394US6861723B2Schottky diode having overcurrent protection and low reverse currentINFINEON TECHNOLOGIES AG·Filed 2003·Granted Mar 1, 2005·80 cites·20 claims
- 0493US7459365B2Method for fabricating a semiconductor componentINFINEON TECHNOLOGIES AUSTRIA·Filed 2006·Granted Dec 2, 2008·29 cites·32 claims
- 0592US7777278B2Lateral semiconductor component with a drift zone having at least one field electrodeINFINEON TECHNOLOGIES AG·Filed 2008·Granted Aug 17, 2010·22 cites·20 claims
- 0691US9024383B2Semiconductor device with a super junction structure with one, two or more pairs of compensation layersINFINEON TECHNOLOGIES AUSTRIA·Filed 2013·Granted May 5, 2015·11 cites·18 claims
- 0791US8866253B2Semiconductor arrangement with active drift zoneWEIS ROLF·Filed 2012·Granted Oct 21, 2014·12 cites·20 claims
- 0890US8344415B2Semiconductor componentINFINEON TECHNOLOGIES AUSTRIA·Filed 2007·Granted Jan 1, 2013·12 cites·15 claims
- 0989US9281392B2Charge compensation structure and manufacturing thereforINFINEON TECHNOLOGIES AUSTRIA·Filed 2014·Granted Mar 8, 2016·11 cites·20 claims
- 1089US7709891B2Component arrangement including a power semiconductor component having a drift control zoneINFINEON TECHNOLOGIES AG·Filed 2008·Granted May 4, 2010·16 cites·22 claims
- 1188US9947741B2Field-effect semiconductor device having pillar regions of different conductivity type arranged in an active areaINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2017·Granted Apr 17, 2018·4 cites·19 claims
- 1287US9306064B2Semiconductor device and integrated apparatus comprising the sameINFINEON TECHNOLOGIES AUSTRIA·Filed 2014·Granted Apr 5, 2016·8 cites·16 claims
- 1385US8461648B2Semiconductor component with a drift region and a drift control regionPFIRSCH FRANK·Filed 2006·Granted Jun 11, 2013·12 cites·34 claims
- 1485US6639272B2Charge compensation semiconductor configurationINFINEON TECHNOLOGIES AG·Filed 2002·Granted Oct 28, 2003·38 cites·12 claims
- 1584US9209292B2Charge compensation semiconductor devicesINFINEON TECHNOLOGIES AUSTRIA·Filed 2013·Granted Dec 8, 2015·5 cites·20 claims
- 1684US7821033B2Semiconductor component comprising a drift zone and a drift control zoneINFINEON TECHNOLOGIES AUSTRIA·Filed 2007·Granted Oct 26, 2010·11 cites·13 claims
- 1784US7554137B2Power semiconductor component with charge compensation structure and method for the fabrication thereofINFINEON TECHNOLOGIES AUSTRIA·Filed 2006·Granted Jun 30, 2009·8 cites·29 claims
- 1883US8975136B2Manufacturing a super junction semiconductor deviceINFINEON TECHNOLOGIES AUSTRIA·Filed 2013·Granted Mar 10, 2015·4 cites·16 claims
- 1983US8803205B2Transistor with controllable compensation regionsWILLMEROTH ARMIN·Filed 2012·Granted Aug 12, 2014·7 cites·28 claims
- 2083US7973362B2Semiconductor component and method for producing itINFINEON TECHNOLOGIES AUSTRIA·Filed 2007·Granted Jul 5, 2011·11 cites·10 claims
- 2182US9293533B2Semiconductor switching devices with different local transconductanceINFINEON TECHNOLOGIES AUSTRIA·Filed 2014·Granted Mar 22, 2016·5 cites·26 claims
- 2282US7825467B2Semiconductor component having a drift zone and a drift control zoneINFINEON TECHNOLOGIES AUSTRIA·Filed 2008·Granted Nov 2, 2010·9 cites·20 claims
- 2381US9570596B2Super junction semiconductor device having a compensation structureINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2015·Granted Feb 14, 2017·3 cites·2 claims
- 2481US9070580B2Semiconductor device with a super junction structure based on a compensation structure with compensation layers and having a compensation rate gradientINFINEON TECHNOLOGIES AUSTRIA·Filed 2013·Granted Jun 30, 2015·6 cites·12 claims
- 2581US7872300B2Power semiconductor component with plate capacitor structureINFINEON TECHNOLOGIES AG·Filed 2006·Granted Jan 18, 2011·7 cites·6 claims
- 2681US6838729B2Semiconductor component with enhanced avalanche ruggednessINFINEON TECHNOLOGIES AG·Filed 2002·Granted Jan 4, 2005·32 cites·24 claims
- 2780US9349792B2Super junction semiconductor device having columnar super junction regionsINFINEON TECHNOLOGIES AUSTRIA·Filed 2015·Granted May 24, 2016·2 cites·14 claims
- 2880US9029944B2Super junction semiconductor device comprising implanted zonesINFINEON TECHNOLOGIES AUSTRIA·Filed 2013·Granted May 12, 2015·5 cites·16 claims
- 2980US8411471B2Electronic circuit and semiconductor arrangement with a load, a sense and a start-up transistorWILLMEROTH ARMIN·Filed 2010·Granted Apr 2, 2013·5 cites·17 claims
- 3079US9570607B2Field-effect semiconductor device having alternating n-type and p-type pillar regions arranged in an active areaINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2015·Granted Feb 14, 2017·2 cites·5 claims
- 3179US8643086B2Semiconductor component with high breakthrough tension and low forward resistancePFIRSCH FRANK DIETER·Filed 2012·Granted Feb 4, 2014·5 cites·45 claims
- 3279US8110868B2Power semiconductor component with a low on-state resistancePFIRSCH FRANK DIETER·Filed 2006·Granted Feb 7, 2012·8 cites·13 claims
- 3379US7112868B2IGBT with monolithic integrated antiparallel diodeINFINEON TECHNOLOGIES AG·Filed 2003·Granted Sep 26, 2006·26 cites·9 claims
- 3479US2024413198A1Semiconductor Device with Compensation StructureINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2024·Application pending·0 cites
- 3578US9190511B2Semiconductor component with a drift region and a drift control regionINFINEON TECHNOLOGIES AUSTRIA·Filed 2013·Granted Nov 17, 2015·4 cites·34 claims
- 3678US8569150B2Method for producing a semiconductor device with a semiconductor bodyWILLMEROTH ARMIN·Filed 2011·Granted Oct 29, 2013·4 cites·10 claims
- 3778US7612344B1Radiation detector and methodINFINEON TECHNOLOGIES AUSTRIA·Filed 2008·Granted Nov 3, 2009·4 cites·25 claims
- 3878US6667514B2Semiconductor component with a charge compensation structure and associated fabricationINFINEON TECHNOLOGIES AG·Filed 2002·Granted Dec 23, 2003·24 cites·15 claims
- 3977US11309434B2Semiconductor device and method of producing the sameINFINEON TECH DRESDEN GMBH & CO KG·Filed 2020·Granted Apr 19, 2022·1 cites·18 claims
- 4077US6914297B2Configuration for generating a voltage sense signal in a power semiconductor componentINFINEON TECHNOLOGIES AG·Filed 2003·Granted Jul 5, 2005·21 cites·14 claims
- 4176US9147763B2Charge-compensation semiconductor deviceINFINEON TECHNOLOGIES AUSTRIA·Filed 2013·Granted Sep 29, 2015·4 cites·20 claims
- 4276US8716792B2Semiconductor device with a charge carrier compensation structure and method for the production of a semiconductor deviceMAUDER ANTON·Filed 2008·Granted May 6, 2014·4 cites·10 claims
- 4376US8698229B2Transistor with controllable compensation regionsWILLMEROTH ARMIN·Filed 2011·Granted Apr 15, 2014·4 cites·7 claims
- 4476US7936010B2Power semiconductor having a lightly doped drift and buffer layerINFINEON TECHNOLOGIES AUSTRIA·Filed 2008·Granted May 3, 2011·6 cites·6 claims
- 4575USRE47710EPower semiconductor having a lightly doped drift and buffer layerINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2015·Granted Nov 5, 2019·2 cites·37 claims
- 4675US8101997B2Semiconductor device with a charge carrier compensation structure in a semiconductor body and method for its productionWILLMEROTH ARMIN·Filed 2008·Granted Jan 24, 2012·5 cites·10 claims
- 4775US7973359B2Semiconductor device with a charge carrier compensation structure and processINFINEON TECHNOLOGIES AUSTRIA·Filed 2008·Granted Jul 5, 2011·6 cites·11 claims
- 4873US10490656B2Charge-compensation semiconductor device and a manufacturing method thereforINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2018·Granted Nov 26, 2019·1 cites·20 claims
- 4973US9312346B2Semiconductor device with a charge carrier compensation structure and method for the production of a semiconductor deviceINFINEON TECHNOLOGIES AUSTRIA·Filed 2014·Granted Apr 12, 2016·2 cites·18 claims
- 5071US10468479B2VDMOS having a drift zone with a compensation structureINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2014·Granted Nov 5, 2019·2 cites·5 claims
Showing the top 50 of 138 patent records by PatentIndex Score.
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