Assignee
WILLMEROTH ARMIN
DE·12 granted patents·32 citations·filing 2007–2012
Top patents by PatentIndex Score
12 records- 0183US8803205B2Transistor with controllable compensation regionsWILLMEROTH ARMIN·Filed 2012·Granted Aug 12, 2014·7 cites·28 claims
- 0280US8411471B2Electronic circuit and semiconductor arrangement with a load, a sense and a start-up transistorWILLMEROTH ARMIN·Filed 2010·Granted Apr 2, 2013·5 cites·17 claims
- 0378US8569150B2Method for producing a semiconductor device with a semiconductor bodyWILLMEROTH ARMIN·Filed 2011·Granted Oct 29, 2013·4 cites·10 claims
- 0476US8698229B2Transistor with controllable compensation regionsWILLMEROTH ARMIN·Filed 2011·Granted Apr 15, 2014·4 cites·7 claims
- 0575US8101997B2Semiconductor device with a charge carrier compensation structure in a semiconductor body and method for its productionWILLMEROTH ARMIN·Filed 2008·Granted Jan 24, 2012·5 cites·10 claims
- 0666US8324686B2Semiconductor device and method for manufacturingWILLMEROTH ARMIN·Filed 2009·Granted Dec 4, 2012·3 cites·25 claims
- 0764US8063419B2Integrated circuit having compensation componentWILLMEROTH ARMIN·Filed 2007·Granted Nov 22, 2011·2 cites·9 claims
- 0863US8941188B2Semiconductor arrangement with a superjunction transistor and a further device integrated in a common semiconductor bodyWILLMEROTH ARMIN·Filed 2012·Granted Jan 27, 2015·1 cites·20 claims
- 0962US8502281B2Integrated circuit having vertical compensation componentWILLMEROTH ARMIN·Filed 2011·Granted Aug 6, 2013·1 cites·13 claims
- 1048US8421147B2MOS transistor with elevated gate drain capacityWILLMEROTH ARMIN·Filed 2010·Granted Apr 16, 2013·0 cites·10 claims
- 1147US8405146B2Component arrangement including a MOS transistor having a field electrodeWILLMEROTH ARMIN·Filed 2010·Granted Mar 26, 2013·0 cites·12 claims
- 1245US8294206B2Integrated circuit device and method for its productionWILLMEROTH ARMIN·Filed 2011·Granted Oct 23, 2012·0 cites·12 claims
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