Inventor · disambiguated record
Aryan Afzalian
Also filed as: AFZALIAN ARYAN
21 granted patents·2 pending applications·35 citations·filing 2014–2024
91Inventor score
Top patents by PatentIndex Score
23 records- 0197US9349860B1Field effect transistors and methods of forming sameTAIWAN SEMICONDUCTOR MFG·Filed 2015·Granted May 24, 2016·18 cites·20 claims
- 0290US9472468B2Nanowire CMOS structure and formation methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Oct 18, 2016·10 cites·20 claims
- 0382US11024729B2Method for manufacturing semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 1, 2021·2 cites·20 claims
- 0482US10483380B2Semiconductor device and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Nov 19, 2019·2 cites·20 claims
- 0580US12283626B2Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Apr 22, 2025·0 cites·20 claims
- 0680US11018226B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 25, 2021·2 cites·20 claims
- 0771US11894451B2Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 6, 2024·0 cites·20 claims
- 0870US10276566B2Leakage current suppression methods and related structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 30, 2019·1 cites·20 claims
- 0967US11688771B2Method for manufacturing semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 27, 2023·0 cites·20 claims
- 1062US10541303B2Nanowire FinFET TransistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jan 21, 2020·0 cites·20 claims
- 1160US10896974B2Method of fabricating semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jan 19, 2021·0 cites·20 claims
- 1260US10861962B2Semiconductor device and method of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 8, 2020·0 cites·20 claims
- 1359US10475908B2Semiconductor device and method of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Nov 12, 2019·0 cites·20 claims
- 1459US10008567B2Nanowire FinFet transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jun 26, 2018·0 cites·20 claims
- 1558US12446246B2Field-effect transistor deviceIMEC VZW·Filed 2022·Granted Oct 14, 2025·0 cites·22 claims
- 1658US2024213321A1Tunneling Enabled Feedback FETIMEC VZW·Filed 2023·Application pending·0 cites
- 1756US9679968B2Field effect transistors and methods of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jun 13, 2017·0 cites·20 claims
- 1855US9818744B2Leakage current suppression methods and related structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Nov 14, 2017·0 cites·19 claims
- 1955US2023178635A1Method for forming a fet deviceIMEC VZW·Filed 2022·Application pending·0 cites
- 2053US10269944B2Fin semiconductor device and method of manufacture with source/drain regions having opposite conductivitiesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 23, 2019·0 cites·20 claims
- 2149US12154979B2Dynamically doped field-effect transistor and a method for controlling suchIMEC VZW·Filed 2021·Granted Nov 26, 2024·0 cites·11 claims
- 2248US9685528B2Fin semiconductor device and method of manufacture with source/drain regions having opposite conductivitiesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jun 20, 2017·0 cites·20 claims
- 2336US11264452B2Hetero-tunnel field-effect transistor (TFET) having a tunnel barrier formed directly above channel region, directly below first source/drain region and adjacent gate electrodeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Mar 1, 2022·0 cites·20 claims
Join the waitlist — get patent alerts
Get an alert when Aryan Afzalian files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →