Inventor · disambiguated record
Shingo Satou
Also filed as: SATOU SHINGO
10 granted patents·1 pending application·157 citations·filing 2000–2019
90Inventor score
Top patents by PatentIndex Score
11 records- 0195US9418778B2Method of manufacturing a feedthroughKYOCERA CORP·Filed 2014·Granted Aug 16, 2016·17 cites·15 claims
- 0288US8588916B2Feedthrough configured for interconnectMORIOKA KENGO·Filed 2011·Granted Nov 19, 2013·13 cites·27 claims
- 0386US10471266B2Hermetic feedthrough for an implantable medical deviceMEDTRONIC INC·Filed 2016·Granted Nov 12, 2019·2 cites·20 claims
- 0485US6429501B1Semiconductor device having high breakdown voltage and method for manufacturing the deviceTOSHIBA KK·Filed 2000·Granted Aug 6, 2002·40 cites·14 claims
- 0584US9008779B2Insulator for a feedthroughKYOCERA CORP·Filed 2014·Granted Apr 14, 2015·21 cites·23 claims
- 0684US8841558B2Hermetic feedthroughMORIOKA KENGO·Filed 2011·Granted Sep 23, 2014·26 cites·38 claims
- 0784US8670829B2Insulator for a feedthroughMORIOKA KENGO·Filed 2011·Granted Mar 11, 2014·20 cites·22 claims
- 0879US8872035B2Hermetic feedthroughMORIOKA KENGO·Filed 2012·Granted Oct 28, 2014·15 cites·38 claims
- 0957US10222949B2Scenario generation method in which various data are associated with each other, scenario execution method in which various data are associated with each other, scenario generation device, and scenario execution deviceFUJITSU LTD·Filed 2014·Granted Mar 5, 2019·1 cites·18 claims
- 1049US2019146649A1Scenario generation method in which various data are associated with each other, scenario execution method in which various data are associated with each other, scenario generation device, and scenario execution deviceFUJITSU LTD·Filed 2019·Application pending·0 cites
- 1146US6222231B1Semiconductor device of high breakdown voltage using semiconductive film and its manufacturing methodTOSHIBA KK·Filed 2000·Granted Apr 24, 2001·2 cites·6 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →