Inventor · disambiguated record
Changsup Mun
Also filed as: MUN CHANGSUP
9 granted patents·2 pending applications·50 citations·filing 2010–2023
84Inventor score
Top patents by PatentIndex Score
11 records- 0194US9368647B2Compositions for etchingSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Jun 14, 2016·15 cites·20 claims
- 0293US7972955B2Three dimensional semiconductor memory device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2010·Granted Jul 5, 2011·17 cites·15 claims
- 0387US8940182B2Compositions for etching and methods of forming a semiconductor device using the sameHONG YOUNG-TAEK·Filed 2012·Granted Jan 27, 2015·12 cites·16 claims
- 0477US9136120B2Compositions for etching and methods of forming a semiconductor device using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Sep 15, 2015·3 cites·8 claims
- 0571US8614511B2Three dimensional semiconductor memory device and method of fabricating the sameCHOI SUKHUN·Filed 2011·Granted Dec 24, 2013·3 cites·5 claims
- 0652US12506010B2Wet etching method and method of fabricating semiconductor device by using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Dec 23, 2025·0 cites·20 claims
- 0745US11653493B2Semiconductor memory device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted May 16, 2023·0 cites·18 claims
- 0842US10128120B2Method of treating a layerSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Nov 13, 2018·0 cites·20 claims
- 0935US2012070944A1Methods of Manufacturing Three Dimensional Semiconductor DevicesKIM HYU-JUNG·Filed 2011·Application pending·0 cites
- 1034US10242880B2Method of wet etching and method of fabricating semiconductor device using the sameKIM KWANGSU·Filed 2017·Granted Mar 26, 2019·0 cites·17 claims
- 1133US2015287590A1Method of rinsing and drying semiconductor device and method of manufacturing semiconductor device using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2015·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →