Inventor · disambiguated record
Ki-Ha Hong
Also filed as: HONG KI-HA
46 granted patents·4 pending applications·135 citations·filing 2005–2019
97Inventor score
Top patents by PatentIndex Score
50 records- 0194US8569769B2E-mode high electron mobility transistors and methods of manufacturing the sameHWANG IN-JUN·Filed 2011·Granted Oct 29, 2013·21 cites·18 claims
- 0292US9070706B2Semiconductor device including a gate electrode on a protruding group III-V material layer and method of manufacturing the semiconductor deviceCHO YOUNG-JIN·Filed 2012·Granted Jun 30, 2015·10 cites·20 claims
- 0392US8816396B2E-mode high electron mobility transistor and method of manufacturing the sameHWANG IN-JUN·Filed 2011·Granted Aug 26, 2014·15 cites·14 claims
- 0488US9443968B2High electron mobility transistors including lightly doped drain regions and methods of manufacturing the sameHWANG IN-JUN·Filed 2011·Granted Sep 13, 2016·10 cites·30 claims
- 0582US8796737B2High electron mobility transistors and methods of manufacturing the sameHWANG IN-JUN·Filed 2011·Granted Aug 5, 2014·5 cites·25 claims
- 0682US8203863B2Nonvolatile memory cells and nonvolatile memory devices including the sameKIM HO-JUNG·Filed 2010·Granted Jun 19, 2012·8 cites·21 claims
- 0781US7936028B2Spin field effect transistor using half metal and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted May 3, 2011·8 cites·20 claims
- 0879US8269293B2Spin transistor and method of operating the sameHONG KI-HA·Filed 2008·Granted Sep 18, 2012·7 cites·29 claims
- 0979US8263449B2Method of manufacturing high electron mobility transistorHONG KI-HA·Filed 2011·Granted Sep 11, 2012·5 cites·12 claims
- 1078US10804412B2Perovskite solar cell having excellent stability and high efficiencyHYUNDAI MOTOR CO LTD·Filed 2017·Granted Oct 13, 2020·2 cites·2 claims
- 1178US9660048B2High electron mobility transistors exhibiting dual depletion and methods of manufacturing the sameHWANG IN-JUN·Filed 2011·Granted May 23, 2017·5 cites·3 claims
- 1277US8878246B2High electron mobility transistors and methods of fabricating the sameHWANG IN-JUN·Filed 2011·Granted Nov 4, 2014·3 cites·8 claims
- 1374US8803565B2Driving circuits, power devices and electronic devices including the sameKIM HO-JUNG·Filed 2011·Granted Aug 12, 2014·3 cites·23 claims
- 1471US9245947B2High electron mobility transistors and methods of manufacturing the sameHWANG IN-JUN·Filed 2012·Granted Jan 26, 2016·2 cites·18 claims
- 1571US8385098B2Ferroelectric memory devices and operating methods thereofSAMSUNG ELECTRONICS CO LTD·Filed 2010·Granted Feb 26, 2013·3 cites·24 claims
- 1671US7977707B2Capacitorless DRAM having a hole reserving unitSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jul 12, 2011·3 cites·22 claims
- 1768US8513705B2Power electronic devices, methods of manufacturing the same, and integrated circuit modules including the sameKIM JONG-SEOB·Filed 2010·Granted Aug 20, 2013·4 cites·13 claims
- 1868US7955562B2Chemical sensor using thin-film sensing memberSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Jun 7, 2011·7 cites·10 claims
- 1966US8508194B2Semiconductor deviceKIM HO-JUNG·Filed 2010·Granted Aug 13, 2013·2 cites·20 claims
- 2064US8487358B2Spin field effect logic devicesHONG KI-HA·Filed 2009·Granted Jul 16, 2013·2 cites·6 claims
- 2164US7978006B2Quantum interference transistors and methods of manufacturing and operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Jul 12, 2011·2 cites·20 claims
- 2263US8004906B2Nonvolatile memory device and method of operating and fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2010·Granted Aug 23, 2011·2 cites·23 claims
- 2363US7933143B2Capacitorless DRAM and methods of operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Apr 26, 2011·2 cites·10 claims
- 2462US8921890B2Substrate structure, semiconductor device fabricated from the same, and method of fabricating the semiconductor deviceCHOI HYUK-SOON·Filed 2012·Granted Dec 30, 2014·1 cites·19 claims
- 2561US8357992B2Non-volatile memory device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2010·Granted Jan 22, 2013·1 cites·12 claims
- 2659US9666706B2Method of manufacturing a semiconductor device including a gate electrode on a protruding group III-V material layerSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted May 30, 2017·0 cites·7 claims
- 2758US11912733B2LHP synthesis simulating method and apparatusKOREA INST SCI & TECH INF·Filed 2019·Granted Feb 27, 2024·0 cites·13 claims
- 2857US9419094B2Semiconductor device including a gate electrode on a protruding group III-V material layer and method of manufacturing the semiconductor deviceCHO YOUNG-JIN·Filed 2016·Granted Aug 16, 2016·0 cites·12 claims
- 2956US9859410B2High electron mobility transistors and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Jan 2, 2018·0 cites·11 claims
- 3056US9343564B2Semiconductor device including a gate electrode on a protruding group III-V material layer and method of manufacturing the semiconductor deviceCHO YOUNG-JIN·Filed 2015·Granted May 17, 2016·0 cites·7 claims
- 3156US8293554B2Luminous device and method of manufacturing the sameHONG KI-HA·Filed 2009·Granted Oct 23, 2012·0 cites·16 claims
- 3255US9324852B2Semiconductor device including a gate electrode on a protruding group III-V material layerCHO YOUNG-JIN·Filed 2015·Granted Apr 26, 2016·0 cites·4 claims
- 3355US7608852B2Luminous device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Oct 27, 2009·0 cites·17 claims
- 3451US7829937B2Semiconductor memory devices performing erase operation using erase gate and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Nov 9, 2010·0 cites·20 claims
- 3550US8791515B2Spin field effect logic devicesSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Jul 29, 2014·0 cites·5 claims
- 3650US2013032816A1High electron mobility transistors and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2012·Application pending·0 cites
- 3748US9299800B2Methods of manufacturing high electron mobility transistorsSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Mar 29, 2016·0 cites·7 claims
- 3848US8119480B2Semiconductor memory devices performing erase operation using erase gate and methods of manufacturing the sameLEE SUNG-HOON·Filed 2010·Granted Feb 21, 2012·0 cites·5 claims
- 3947US9123740B2High electron mobility transistors and methods of manufacturing the sameCHOI HYUK-SOON·Filed 2012·Granted Sep 1, 2015·0 cites·10 claims
- 4047US8790998B2Method of forming core-shell type structure and method of manufacturing transistor using the sameHONG KI-HA·Filed 2009·Granted Jul 29, 2014·0 cites·20 claims
- 4146US8558256B2Light emitting diode using semiconductor nanowire and method of fabricating the sameHONG KI-HA·Filed 2007·Granted Oct 15, 2013·0 cites·10 claims
- 4246US7948019B2Nonvolatile memory devices and methods of operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted May 24, 2011·0 cites·22 claims
- 4346US7332740B2Memory device having molecular adsorption layerSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Feb 19, 2008·2 cites·19 claims
- 4446US2015221745A1High electron mobility transistors and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2015·Application pending·0 cites
- 4543US2012088341A1Methods Of Manufacturing High Electron Mobility TransistorsCHOI HYUK-SOON·Filed 2011·Application pending·0 cites
- 4642US8835985B2Power electronic device and method of manufacturing the sameHWANG IN-JUN·Filed 2011·Granted Sep 16, 2014·0 cites·22 claims
- 4742US7813185B2Nonvolatile memory device and method of operating and fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Oct 12, 2010·0 cites·14 claims
- 4842US2008149997A1Nonvolatile memory device and method of operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 4941US8480959B2Chemical sensor using thin-film sensing memberHONG KI-HA·Filed 2011·Granted Jul 9, 2013·0 cites·9 claims
- 5038US9450071B2Field effect semiconductor devices and methods of manufacturing field effect semiconductor devicesHONG KI-HA·Filed 2010·Granted Sep 20, 2016·0 cites·14 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →