Inventor · disambiguated record
Dawon Kahng
Also filed as: KAHNG DAWON
11 granted patents·420 citations·filing 1975–1992
92Inventor score
Top patents by PatentIndex Score
11 records- 0197US4324038AMethod of fabricating MOS field effect transistorsBELL TELEPHONE LABOR INC·Filed 1980·Granted Apr 13, 1982·128 cites·20 claims
- 0293US3964085AMethod for fabricating multilayer insulator-semiconductor memory apparatusBELL TELEPHONE LABOR INC·Filed 1975·Granted Jun 15, 1976·91 cites·16 claims
- 0387US4623912ANitrided silicon dioxide layers for semiconductor integrated circuitsAT & T BELL LAB·Filed 1984·Granted Nov 18, 1986·66 cites·11 claims
- 0471US4460434AMethod for planarizing patterned surfacesAT & T BELL LAB·Filed 1983·Granted Jul 17, 1984·34 cites·12 claims
- 0570US4214359AMOS Devices having buried terminal zones under local oxide regionsBELL TELEPHONE LABOR INC·Filed 1978·Granted Jul 29, 1980·17 cites·7 claims
- 0669US4271583AFabrication of semiconductor devices having planar recessed oxide isolation regionBELL TELEPHONE LABOR INC·Filed 1980·Granted Jun 9, 1981·27 cites·11 claims
- 0756US4135289AMethod for producing a buried junction memory deviceBELL TELEPHONE LABOR INC·Filed 1977·Granted Jan 23, 1979·13 cites·3 claims
- 0854US3945031ACharge effects in doped silicon dioxideBELL TELEPHONE LABOR INC·Filed 1975·Granted Mar 16, 1976·15 cites·12 claims
- 0953US5198721AElectroluminescent cell using a ZnS host including molecules of a ternary europium tetrafluoride compoundNEC RESEARCH INST INC·Filed 1991·Granted Mar 30, 1993·9 cites·1 claims
- 1044US5107314AGallium antimonide field-effect transistorNEC RESEARCH INST·Filed 1991·Granted Apr 21, 1992·12 cites·10 claims
- 1142US5286517AA process for making an electroluminescent cell using a ZnS host including molecules of a ternary europium tetrafluoride compoundNEC RESEARCH INST INC·Filed 1992·Granted Feb 15, 1994·8 cites·7 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →