Inventor · disambiguated record
Hideki Komori
Also filed as: KOMORI HIDEKI
20 granted patents·5 pending applications·693 citations·filing 1993–2023
96Inventor score
Files withADVANCED MICRO DEVICES INC10FUJITSU LTD5MITSUBISHI ELECTRIC CORP4NEC CORP3NIPPON PAINT CO LTD1
Top patents by PatentIndex Score
25 records- 0194US5534073ASemiconductor producing apparatus comprising wafer vacuum chucking deviceMITSUBISHI ELECTRIC CORP·Filed 1993·Granted Jul 9, 1996·213 cites·9 claims
- 0291US7227780B2Semiconductor device and control method thereofSPANSION LLC·Filed 2005·Granted Jun 5, 2007·38 cites·14 claims
- 0390US6265268B1High temperature oxide deposition process for fabricating an ONO floating-gate electrode in a two bit EEPROM deviceADVANCED MICRO DEVICES INC·Filed 1999·Granted Jul 24, 2001·94 cites·21 claims
- 0487US6248628B1Method of fabricating an ONO dielectric by nitridation for MNOS memory cellsADVANCED MICRO DEVICES INC·Filed 1999·Granted Jun 19, 2001·68 cites·20 claims
- 0586US6528390B2Process for fabricating a non-volatile memory deviceADVANCED MICRO DEVICES INC·Filed 2001·Granted Mar 4, 2003·44 cites·16 claims
- 0685US6117730AIntegrated method by using high temperature oxide for top oxide and periphery gate oxideADVANCED MICRO DEVICES INC·Filed 1999·Granted Sep 12, 2000·52 cites·17 claims
- 0778US5976260ASemiconductor producing apparatus, and wafer vacuum chucking device, gas cleaning method and nitride film forming method in semiconductor producing apparatusMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Nov 2, 1999·48 cites·14 claims
- 0875US6248635B1Process for fabricating a bit-line in a monos device using a dual layer hard maskADVANCED MICRO DEVICES INC·Filed 1999·Granted Jun 19, 2001·36 cites·17 claims
- 0969US7202540B2Semiconductor memory deviceADVANCED MICRO DEVICES INC·Filed 2005·Granted Apr 10, 2007·8 cites·8 claims
- 1064US6573140B1Process for making a dual bit memory device with isolated polysilicon floating gatesADVANCED MICRO DEVICES INC·Filed 2001·Granted Jun 3, 2003·11 cites·17 claims
- 1164US6218227B1Method to generate a MONOS type flash cell using polycrystalline silicon as an ONO top layerADVANCED MICRO DEVICES INC·Filed 1999·Granted Apr 17, 2001·19 cites·17 claims
- 1261US2024169285A1Contribution degree estimation system, contribution degree estimation method, and programNEC CORP·Filed 2023·Application pending·0 cites
- 1360US9390995B2Semiconductor device and method of manufacturing the sameYAMAMOTO KEI·Filed 2012·Granted Jul 12, 2016·1 cites·19 claims
- 1460US5770304AWide bandwidth electromagnetic wave absorbing materialNIPPON PAINT CO LTD·Filed 1995·Granted Jun 23, 1998·28 cites·10 claims
- 1560US2007022957A1Deposition systemMITSUBISHI ELECTRIC CORP·Filed 2006·Application pending·0 cites
- 1658US2025356383A1Federated learning model generation apparatus, federated learning model generation system, federated learning model generation method, computer-readable medium, and federated learning modelNEC CORP·Filed 2023·Application pending·0 cites
- 1758US2025245688A1Data processing apparatus, data processing system, data processing method, and non-transitory computer-readable medium storing programNEC CORP·Filed 2023·Application pending·0 cites
- 1857US2006081188A1Deposition systemMITSUBISHI ELECTRIC CORP·Filed 2005·Application pending·0 cites
- 1954US5950086AMethod of fabricating an EPROM type device with reduced process residuesFUJITSU LTD·Filed 1997·Granted Sep 7, 1999·13 cites·12 claims
- 2050US6242305B1Process for fabricating a bit-line using buried diffusion isolationADVANCED MICRO DEVICES INC·Filed 1999·Granted Jun 5, 2001·10 cites·18 claims
- 2149US7759745B2Semiconductor memory deviceFUJITSU LTD·Filed 2007·Granted Jul 20, 2010·2 cites·14 claims
- 2245US6713809B1Dual bit memory device with isolated polysilicon floating gatesADVANCED MICRO DEVICES INC·Filed 2001·Granted Mar 30, 2004·2 cites·17 claims
- 2345US6579769B2Semiconductor device manufacturing method including forming FOX with dual oxidationFUJITSU LTD·Filed 2000·Granted Jun 17, 2003·1 cites·9 claims
- 2438US7482226B2Semiconductor memory deviceFUJITSU LTD·Filed 2007·Granted Jan 27, 2009·0 cites·12 claims
- 2537US6187640B1Semiconductor device manufacturing method including various oxidation steps with different concentration of chlorine to form a field oxideFUJITSU LTD·Filed 1998·Granted Feb 13, 2001·5 cites·8 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →