Inventor · disambiguated record
Heng-Wen Ting
Also filed as: TING HENG-WEN
32 granted patents·8 pending applications·63 citations·filing 2010–2025
95Inventor score
Top patents by PatentIndex Score
40 records- 0197US9831116B2FETS and methods of forming FETsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Nov 28, 2017·23 cites·20 claims
- 0296US11948999B2Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 2, 2024·2 cites·20 claims
- 0394US11728208B2FETS and methods of forming FETSTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 15, 2023·2 cites·20 claims
- 0494US10483396B1Interfacial layer between fin and source/drain regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Nov 19, 2019·10 cites·20 claims
- 0592US10103249B2FinFET device and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Oct 16, 2018·7 cites·20 claims
- 0691US11004724B2FETS and methods of forming FETSTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 11, 2021·5 cites·19 claims
- 0790US9905641B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Feb 27, 2018·5 cites·20 claims
- 0886US12471311B2Semiconductor Fin-like field-effect transistor (FinFET) device including source/drain structure with boron doped capping layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Nov 11, 2025·0 cites·20 claims
- 0986US2025006549A1FETS and Methods of Forming FETSTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1084US11075120B2FinFET device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 27, 2021·2 cites·20 claims
- 1182US10468482B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Nov 5, 2019·2 cites·20 claims
- 1281US12336210B2Source/drain structure for semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jun 17, 2025·0 cites·20 claims
- 1381US12218240B2Source/drain regions of FinFET devices and methods of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 4, 2025·0 cites·20 claims
- 1481US2025287630A1Source/drain structure for semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1580US2024395625A1FinFET Device and MethodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1679US11164944B2Method of manufacturing a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 2, 2021·2 cites·20 claims
- 1779US2024274667A1Semiconductor Device and Method of ManufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1877US11735668B2Interfacial layer between fin and source/drain regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 22, 2023·0 cites·20 claims
- 1977US11171209B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 9, 2021·1 cites·20 claims
- 2076US2024355826A1Epitaxy regions with large landing areas for contact plugsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2174US12112986B2FinFET device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 8, 2024·0 cites·20 claims
- 2274US12057450B2Epitaxy regions with large landing areas for contact plugsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 6, 2024·0 cites·20 claims
- 2374US12002854B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 4, 2024·0 cites·20 claims
- 2473US11735664B2Source/drain regions of FINFET devices and methods of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 22, 2023·0 cites·20 claims
- 2572US11575026B2Source/drain structure for semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 7, 2023·0 cites·20 claims
- 2672US11482620B2Interfacial layer between Fin and source/drain regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 25, 2022·0 cites·20 claims
- 2772US11430878B2Method for fabricating semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 30, 2022·0 cites·20 claims
- 2871US8283469B2Perylene diimide derivative and organic semiconductor element using the same materialCHEN SZU-YING·Filed 2010·Granted Oct 9, 2012·1 cites·14 claims
- 2967US11652105B2Epitaxy regions with large landing areas for contact plugsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 16, 2023·0 cites·20 claims
- 3064US10991795B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Apr 27, 2021·0 cites·20 claims
- 3163US11107923B2Source/drain regions of FinFET devices and methods of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 31, 2021·0 cites·20 claims
- 3263US10164097B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Dec 25, 2018·1 cites·20 claims
- 3362US10944005B2Interfacial layer between fin and source/drain regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 9, 2021·0 cites·20 claims
- 3462US10749013B2Semiconductor device and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Aug 18, 2020·0 cites·20 claims
- 3559US10269618B2FETS and methods of forming FETSTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 23, 2019·0 cites·20 claims
- 3658US12094761B2FETs and methods of forming FETsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 17, 2024·0 cites·20 claims
- 3755US2024021618A1Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3852US2024030317A1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 3945US2021265350A1Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Application pending·0 cites
- 4041US8368057B2Organic thin film transistorNAT UNIV TSING HUA·Filed 2010·Granted Feb 5, 2013·0 cites·18 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →