Inventor · disambiguated record
Gregory G. Freeman
Also filed as: FREEMAN GREGORY · FREEMAN GREGORY G · FREEMAN GREGORY GOWER
52 granted patents·1 pending application·584 citations·filing 2000–2016
98Inventor score
Top patents by PatentIndex Score
53 records- 0192US6940149B1Structure and method of forming a bipolar transistor having a void between emitter and extrinsic baseIBM·Filed 2004·Granted Sep 6, 2005·64 cites·20 claims
- 0290US7144787B2Methods to improve the SiGe heterojunction bipolar device performanceIBM·Filed 2005·Granted Dec 5, 2006·16 cites·17 claims
- 0389US8115254B2Semiconductor-on-insulator structures including a trench containing an insulator stressor plug and method of fabricating sameZHU HUILONG·Filed 2007·Granted Feb 14, 2012·14 cites·15 claims
- 0489US7749822B2Method of forming a resistor and an FET from the metal portion of a MOSFET metal gate stackIBM·Filed 2007·Granted Jul 6, 2010·17 cites·19 claims
- 0589US6492238B1Bipolar transistor with raised extrinsic base fabricated in an integrated BiCMOS circuitIBM·Filed 2001·Granted Dec 10, 2002·45 cites·17 claims
- 0687US8940595B2Faceted intrinsic epitaxial buffer layer for reducing short channel effects while maximizing channel stress levelsIBM·Filed 2013·Granted Jan 27, 2015·8 cites·20 claims
- 0786US6864560B2Bipolar transistor structure with a shallow isolation extension region providing reduced parasitic capacitanceIBM·Filed 2003·Granted Mar 8, 2005·41 cites·20 claims
- 0885US6414371B1Process and structure for 50+ gigahertz transistorIBM·Filed 2000·Granted Jul 2, 2002·38 cites·22 claims
- 0984US7615457B2Method of fabricating self-aligned bipolar transistor having tapered collectorIBM·Filed 2008·Granted Nov 10, 2009·9 cites·8 claims
- 1084US7170083B2Bipolar transistor with collector having an epitaxial Si:C regionIBM·Filed 2005·Granted Jan 30, 2007·9 cites·7 claims
- 1184US7102205B2Bipolar transistor with extrinsic stress layerIBM·Filed 2004·Granted Sep 5, 2006·32 cites·6 claims
- 1283US9287399B2Faceted intrinsic epitaxial buffer layer for reducing short channel effects while maximizing channel stress levelsIBM·Filed 2014·Granted Mar 15, 2016·5 cites·16 claims
- 1383US7476914B2Methods to improve the SiGe heterojunction bipolar device performanceIBM·Filed 2006·Granted Jan 13, 2009·8 cites·7 claims
- 1483US6979884B2Bipolar transistor having self-aligned silicide and a self-aligned emitter contact borderIBM·Filed 2003·Granted Dec 27, 2005·27 cites·10 claims
- 1580US10191108B2On-chip sensor for monitoring active circuits on integrated circuit (IC) chipsGLOBALFOUNDRIES INC·Filed 2015·Granted Jan 29, 2019·2 cites·20 claims
- 1678US6780695B1BiCMOS integration scheme with raised extrinsic baseIBM·Filed 2003·Granted Aug 24, 2004·24 cites·17 claims
- 1777US8017483B2Method of creating asymmetric field-effect-transistorsIBM·Filed 2009·Granted Sep 13, 2011·5 cites·26 claims
- 1875US7611953B2Bipolar transistor with isolation and direct contactsIBM·Filed 2007·Granted Nov 3, 2009·5 cites·8 claims
- 1974US6667521B2Bipolar transistor with raised extrinsic base fabricated in an integrated BiCMOS circuitIBM·Filed 2002·Granted Dec 23, 2003·15 cites·8 claims
- 2073US6506656B2Stepped collector implant and method for fabricationIBM·Filed 2001·Granted Jan 14, 2003·18 cites·14 claims
- 2172US7790553B2Methods for forming high performance gates and structures thereofIBM·Filed 2008·Granted Sep 7, 2010·5 cites·14 claims
- 2272US7466010B2Bipolar transistor having self-aligned silicide and a self-aligned emitter contact borderIBM·Filed 2005·Granted Dec 16, 2008·4 cites·12 claims
- 2372US6960820B2Bipolar transistor self-alignment with raised extrinsic base extension and methods of forming sameIBM·Filed 2003·Granted Nov 1, 2005·14 cites·17 claims
- 2472US6472288B2Method of fabricating bipolar transistors with independent impurity profile on the same chipIBM·Filed 2000·Granted Oct 29, 2002·21 cites·15 claims
- 2571US7355221B2Field effect transistor having an asymmetrically stressed channel regionIBM·Filed 2005·Granted Apr 8, 2008·3 cites·10 claims
- 2671US6927476B2Bipolar device having shallow junction raised extrinsic base and method for making the sameIBM·Filed 2001·Granted Aug 9, 2005·16 cites·34 claims
- 2770US7442595B2Bipolar transistor with collector having an epitaxial Si:C regionIBM·Filed 2006·Granted Oct 28, 2008·3 cites·12 claims
- 2870US7425754B2Structure and method of self-aligned bipolar transistor having tapered collectorIBM·Filed 2004·Granted Sep 16, 2008·13 cites·5 claims
- 2969US7180157B2Bipolar transistor with a very narrow emitter featureIBM·Filed 2004·Granted Feb 20, 2007·12 cites·20 claims
- 3068US7611954B2Bipolar transistor self-alignment with raised extrinsic base extension and methods of forming sameIBM·Filed 2005·Granted Nov 3, 2009·3 cites·11 claims
- 3166US8232603B2Gated diode structure and method including relaxed linerCHOU ANTHONY I·Filed 2010·Granted Jul 31, 2012·2 cites·20 claims
- 3266US7217988B2Bipolar transistor with isolation and direct contactsIBM·Filed 2004·Granted May 15, 2007·10 cites·13 claims
- 3364US9552455B2Method for an efficient modeling of the impact of device-level self-heating on electromigration limited current specificationsGLOBALFOUNDRIES INC·Filed 2015·Granted Jan 24, 2017·1 cites·15 claims
- 3464US7741186B2Creating increased mobility in a bipolar deviceIBM·Filed 2007·Granted Jun 22, 2010·2 cites·7 claims
- 3564US6800921B1Method of fabricating a polysilicon capacitor utilizing fet and bipolar base polysilicon layersIBM·Filed 2000·Granted Oct 5, 2004·9 cites·7 claims
- 3662US7709930B2Tuneable semiconductor device with discontinuous portions in the sub-collectorIBM·Filed 2004·Granted May 4, 2010·10 cites·8 claims
- 3761US9906213B2Reducing thermal runaway in inverter devicesGLOBALFOUNDRIES INC·Filed 2015·Granted Feb 27, 2018·1 cites·20 claims
- 3861US6858485B2Method for creation of a very narrow emitter featureIBM·Filed 2003·Granted Feb 22, 2005·8 cites·17 claims
- 3960US6670228B2Method of fabricating a polysilicon capacitor utilizing FET and bipolar base polysilicon layersIBM·Filed 2003·Granted Dec 30, 2003·7 cites·23 claims
- 4060US6531720B2Dual sidewall spacer for a self-aligned extrinsic base in SiGe heterojunction bipolar transistorsIBM·Filed 2001·Granted Mar 11, 2003·9 cites·3 claims
- 4159US6864517B2Bipolar structure with two base-emitter junctions in the same circuitIBM·Filed 2003·Granted Mar 8, 2005·7 cites·7 claims
- 4259US6844225B2Self-aligned mask formed utilizing differential oxidation rates of materialsIBM·Filed 2003·Granted Jan 18, 2005·5 cites·11 claims
- 4358US7348250B2Bipolar structure with two base-emitter junctions in the same circuitIBM·Filed 2005·Granted Mar 25, 2008·1 cites·13 claims
- 4458US7329941B2Creating increased mobility in a bipolar deviceIBM·Filed 2004·Granted Feb 12, 2008·6 cites·7 claims
- 4556US9406569B2Semiconductor device having diffusion barrier to reduce back channel leakageGLOBALFOUNDRIES INC·Filed 2014·Granted Aug 2, 2016·0 cites·5 claims
- 4656US6803642B2Bipolar device having non-uniform depth base-emitter junctionIBM·Filed 2001·Granted Oct 12, 2004·7 cites·10 claims
- 4755US9305999B2Stress-generating structure for semiconductor-on-insulator devicesGLOBALFOUNDRIES INC·Filed 2013·Granted Apr 5, 2016·0 cites·14 claims
- 4854US7288827B2Self-aligned mask formed utilizing differential oxidation rates of materialsIBM·Filed 2004·Granted Oct 30, 2007·3 cites·4 claims
- 4953US8629501B2Stress-generating structure for semiconductor-on-insulator devicesZHU HUILONG·Filed 2012·Granted Jan 14, 2014·0 cites·13 claims
- 5052US9240354B2Semiconductor device having diffusion barrier to reduce back channel leakageIBM·Filed 2012·Granted Jan 19, 2016·0 cites·8 claims
Showing the top 50 of 53 patent records by PatentIndex Score.
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