Inventor · disambiguated record
S. Brad Herner
Also filed as: HERNER S B · HERNER S BRAD
95 granted patents·19 pending applications·3,993 citations·filing 2002–2013
99Inventor score
Files withSANDISK 3D LLC54MATRIX SEMICONDUCTOR INC19HERNER S BRAD14TWIN CREEKS TECHNOLOGIES INC10HILALI MOHAMED M2
Top patents by PatentIndex Score
114 records- 0199US7888205B2Highly scalable thin film transistorSANDISK 3D LLC·Filed 2010·Granted Feb 15, 2011·95 cites·14 claims
- 0299US7405465B2Deposited semiconductor structure to minimize n-type dopant diffusion and method of makingSANDISK 3D LLC·Filed 2005·Granted Jul 29, 2008·130 cites·20 claims
- 0399US7238607B2Method to minimize formation of recess at surface planarized by chemical mechanical planarizationSANDISK 3D LLC·Filed 2005·Granted Jul 3, 2007·162 cites·19 claims
- 0499US7176064B2Memory cell comprising a semiconductor junction diode crystallized adjacent to a silicideSANDISK 3D LLC·Filed 2004·Granted Feb 13, 2007·337 cites·6 claims
- 0599US6952030B2High-density three-dimensional memory cellMATRIX SEMICONDUCTOR INC·Filed 2004·Granted Oct 4, 2005·472 cites·7 claims
- 0699US6946719B2Semiconductor device including junction diode contacting contact-antifuse unit comprising silicideMATRIX SEMICONDUCTOR INC·Filed 2003·Granted Sep 20, 2005·288 cites·85 claims
- 0798US8227787B2Heterojunction device comprising a semiconductor and a resistivity-switching oxide or nitrideKUMAR TANMAY·Filed 2011·Granted Jul 24, 2012·106 cites·16 claims
- 0898US7875871B2Heterojunction device comprising a semiconductor and a resistivity-switching oxide or nitrideSANDISK 3D LLC·Filed 2006·Granted Jan 25, 2011·120 cites·14 claims
- 0998US7830697B2High forward current diodes for reverse write 3D cellSANDISK 3D LLC·Filed 2007·Granted Nov 9, 2010·57 cites·20 claims
- 1098US7745312B2Selective germanium deposition for pillar devicesSANDISK 3D LLC·Filed 2008·Granted Jun 29, 2010·89 cites·33 claims
- 1198US7667999B2Method to program a memory cell comprising a carbon nanotube fabric and a steering elementSANDISK 3D LLC·Filed 2007·Granted Feb 23, 2010·59 cites·13 claims
- 1298US7285464B2Nonvolatile memory cell comprising a reduced height vertical diodeSANDISK 3D LLC·Filed 2004·Granted Oct 23, 2007·139 cites·33 claims
- 1398US6984561B2Method for making high density nonvolatile memoryMATRIX SEMICONDUCTOR INC·Filed 2004·Granted Jan 10, 2006·131 cites·17 claims
- 1498US6951780B1Selective oxidation of silicon in diode, TFT, and monolithic three dimensional memory arraysMATRIX SEMICONDUCTOR INC·Filed 2003·Granted Oct 4, 2005·172 cites·9 claims
- 1598US6853049B2Silicide-silicon oxide-semiconductor antifuse device and method of makingMATRIX SEMICONDUCTOR INC·Filed 2002·Granted Feb 8, 2005·165 cites·47 claims
- 1698US6815781B2Inverted staggered thin film transistor with salicided source/drain structures and method of making sameMATRIX SEMICONDUCTOR INC·Filed 2002·Granted Nov 9, 2004·309 cites·40 claims
- 1797US7812404B2Nonvolatile memory cell comprising a diode and a resistance-switching materialSANDISK 3D LLC·Filed 2006·Granted Oct 12, 2010·55 cites·116 claims
- 1897US7767499B2Method to form upward pointing p-i-n diodes having large and uniform currentSANDISK 3D LLC·Filed 2007·Granted Aug 3, 2010·57 cites·21 claims
- 1997US7728318B2Nonvolatile phase change memory cell having a reduced contact areaSANDISK CORP·Filed 2006·Granted Jun 1, 2010·83 cites·18 claims
- 2097US7501331B2Low-temperature metal-induced crystallization of silicon-germanium filmsSANDISK 3D LLC·Filed 2006·Granted Mar 10, 2009·52 cites·38 claims
- 2197US7224013B2Junction diode comprising varying semiconductor compositionsSANDISK 3D LLC·Filed 2004·Granted May 29, 2007·122 cites·88 claims
- 2296US7982209B2Memory cell comprising a carbon nanotube fabric element and a steering elementSANDISK 3D LLC·Filed 2007·Granted Jul 19, 2011·41 cites·29 claims
- 2396US7660181B2Method of making non-volatile memory cell with embedded antifuseSANDISK 3D LLC·Filed 2007·Granted Feb 9, 2010·49 cites·6 claims
- 2496US7586773B2Large array of upward pointing p-i-n diodes having large and uniform currentSANDISK 3D LLC·Filed 2007·Granted Sep 8, 2009·28 cites·7 claims
- 2595US7557405B2High-density nonvolatile memorySANDISK 3D LLC·Filed 2006·Granted Jul 7, 2009·20 cites·28 claims
- 2695US6995422B2High-density three-dimensional memoryMATRIX SEMICONDUCTOR INC·Filed 2004·Granted Feb 7, 2006·52 cites·10 claims
- 2794US8247260B2Method to form a photovoltaic cell comprising a thin laminaSIVARAM SRINIVASAN·Filed 2009·Granted Aug 21, 2012·23 cites·15 claims
- 2894US7648896B2Deposited semiconductor structure to minimize n-type dopant diffusion and method of makingSANDISK 3D LLC·Filed 2008·Granted Jan 19, 2010·23 cites·19 claims
- 2994US7560339B2Nonvolatile memory cell comprising a reduced height vertical diodeSANDISK 3D LLC·Filed 2007·Granted Jul 14, 2009·22 cites·22 claims
- 3094US7026212B2Method for making high density nonvolatile memoryMATRIX SEMICONDUCTORS INC·Filed 2004·Granted Apr 11, 2006·54 cites·17 claims
- 3193US6960495B2Method for making contacts in a high-density memoryMATRIX SEMICONDUCTOR INC·Filed 2004·Granted Nov 1, 2005·41 cites·6 claims
- 3292US7906392B2Pillar devices and methods of making thereofSANDISK 3D LLC·Filed 2008·Granted Mar 15, 2011·21 cites·3 claims
- 3392US7800933B2Method for using a memory cell comprising switchable semiconductor memory element with trimmable resistanceSANDISK 3D LLC·Filed 2006·Granted Sep 21, 2010·19 cites·50 claims
- 3492US7265049B2Ultrathin chemically grown oxide film as a dopant diffusion barrier in semiconductor devicesSANDISK 3D LLC·Filed 2005·Granted Sep 4, 2007·69 cites·20 claims
- 3592US7009275B2Method for making high density nonvolatile memoryMATRIX SEMICONDUCTOR INC·Filed 2004·Granted Mar 7, 2006·37 cites·24 claims
- 3691US7682920B2Method for making a p-i-n diode crystallized adjacent to a silicide in series with a dielectric antifuseSANDISK 3D LLC·Filed 2006·Granted Mar 23, 2010·19 cites·15 claims
- 3790US8987119B2Pillar devices and methods of making thereofDUNTON VANCE·Filed 2011·Granted Mar 24, 2015·15 cites·35 claims
- 3890US6956278B2Low-density, high-resistivity titanium nitride layer for use as a contact for low-leakage dielectric layersMATRIX SEMICONDUCTOR INC·Filed 2003·Granted Oct 18, 2005·40 cites·30 claims
- 3989US7842585B2Method to form a photovoltaic cell comprising a thin laminaTWIN CREEKS TECHNOLOGIES INC·Filed 2008·Granted Nov 30, 2010·9 cites·15 claims
- 4088US8563352B2Creation and translation of low-relief texture for a photovoltaic cellHILALI MOHAMED M·Filed 2010·Granted Oct 22, 2013·6 cites·20 claims
- 4187US7915095B2Silicide-silicon oxide-semiconductor antifuse device and method of makingSANDISK 3D LLC·Filed 2010·Granted Mar 29, 2011·6 cites·20 claims
- 4287US7800934B2Programming methods to increase window for reverse write 3D cellSANDISK 3D LLC·Filed 2007·Granted Sep 21, 2010·11 cites·21 claims
- 4386US7855119B2Method for forming polycrystalline thin film bipolar transistorsSANDISK 3D LLC·Filed 2007·Granted Dec 21, 2010·12 cites·17 claims
- 4486US6815077B1Low temperature, low-resistivity heavily doped p-type polysilicon depositionMATRIX SEMICONDUCTOR INC·Filed 2003·Granted Nov 9, 2004·29 cites·20 claims
- 4584US7858430B2Method for making a photovoltaic cell comprising contact regions doped through a laminaTWIN CREEKS TECHNOLOGIES INC·Filed 2008·Granted Dec 28, 2010·7 cites·20 claims
- 4683US8481845B2Method to form a photovoltaic cell comprising a thin laminaSIVARAM SRINIVASAN·Filed 2008·Granted Jul 9, 2013·5 cites·8 claims
- 4782US8072791B2Method of making nonvolatile memory device containing carbon or nitrogen doped diodeHERNER S BRAD·Filed 2007·Granted Dec 6, 2011·7 cites·21 claims
- 4881US7655509B2Silicide-silicon oxide-semiconductor antifuse device and method of makingSANDISK 3D LLC·Filed 2007·Granted Feb 2, 2010·6 cites·20 claims
- 4980US8501522B2Intermetal stack for use in a photovoltaic cellHERNER S BRAD·Filed 2011·Granted Aug 6, 2013·4 cites·19 claims
- 5080US7830694B2Large array of upward pointing p-i-n diodes having large and uniform currentSANDISK 3D LLC·Filed 2009·Granted Nov 9, 2010·4 cites·14 claims
Showing the top 50 of 114 patent records by PatentIndex Score.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →