Inventor · disambiguated record
Stefan Degroote
Also filed as: DEGROOTE STEFAN
15 granted patents·3 pending applications·74 citations·filing 2004–2022
91Inventor score
Top patents by PatentIndex Score
18 records- 0189US8487316B2Method of manufacturing an integrated semiconductor substrate structure with device areas for definition of GaN-based devices and CMOS devicesCHENG KAI·Filed 2010·Granted Jul 16, 2013·13 cites·8 claims
- 0286US7666765B2Method for forming a group III nitride material on a silicon substrateIMEC·Filed 2007·Granted Feb 23, 2010·11 cites·30 claims
- 0381US9991346B2Semiconductor structure comprising an active semiconductor layer of the III-V type on a buffer layer stack and method for producing semiconductor structureEPIGAN NV·Filed 2015·Granted Jun 5, 2018·4 cites·19 claims
- 0481US8373204B2Semiconductor device and method of manufacturing thereofIMEC·Filed 2010·Granted Feb 12, 2013·4 cites·16 claims
- 0578US8017509B2Growth of monocrystalline GeN on a substrateIMEC·Filed 2007·Granted Sep 13, 2011·5 cites·30 claims
- 0678US7989925B2Method for forming a group III nitride material on a silicon substrateIMEC·Filed 2009·Granted Aug 2, 2011·5 cites·11 claims
- 0778US7964482B2Deposition of group III-nitrides on GeIMEC·Filed 2007·Granted Jun 21, 2011·5 cites·30 claims
- 0876US7327036B2Method for depositing a group III-nitride material on a silicon substrate and device thereforIMEC INTER UNI MICRO ELECTR·Filed 2004·Granted Feb 5, 2008·19 cites·15 claims
- 0972US8580626B2Semiconductor device and method of manufacturing thereofIMEC·Filed 2013·Granted Nov 12, 2013·2 cites·19 claims
- 1070US9543424B2Method for growing III-V epitaxial layers and semiconductor structureDERLUYN JOFF·Filed 2012·Granted Jan 10, 2017·3 cites·26 claims
- 1162US8956453B2Method for producing a crystalline germanium layer on a substrateLIETEN RUBEN·Filed 2008·Granted Feb 17, 2015·2 cites·22 claims
- 1261US9847412B2Device comprising a III-N layer stack with improved passivation layer and associated manufacturing methodEPIGAN NV·Filed 2012·Granted Dec 19, 2017·1 cites·27 claims
- 1353US2025056858A1Group iii-nitride semiconductor structure on silicon-on-insulator and method of growing thereofSOITEC SILICON ON INSULATOR·Filed 2022·Application pending·0 cites
- 1450US9230803B2Method for growing III-V epitaxial layersDERLUYN JOFF·Filed 2012·Granted Jan 5, 2016·0 cites·11 claims
- 1548US9748331B2Method for growing III-V epitaxial layersEPIGAN NV·Filed 2015·Granted Aug 29, 2017·0 cites·20 claims
- 1635US2011005455A1Method for Manufacturing a Mono-Crystalline Layer on a SubstrateIMEC·Filed 2010·Application pending·0 cites
- 1734US11287249B2Wafer surface curvature determining systemSOITEC BELGIUM·Filed 2018·Granted Mar 29, 2022·0 cites·10 claims
- 1833US2020332438A1A method for forming silicon carbide onto a silicon substrateEPIGAN NV·Filed 2018·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →