Inventor · disambiguated record
Frank M. Cerio, Jr.
Also filed as: CERIO FRANK · CERIO FRANK M · CERIO FRANK M JR · CERIO JR FRANK M
23 granted patents·14 pending applications·580 citations·filing 1998–2025
96Inventor score
Top patents by PatentIndex Score
37 records- 0197US7588667B2Depositing rhuthenium films using ionized physical vapor deposition (IPVD)TOKYO ELECTRON LTD·Filed 2006·Granted Sep 15, 2009·53 cites·18 claims
- 0296US7700474B2Barrier deposition using ionized physical vapor deposition (iPVD)TOKYO ELECTRON LTD·Filed 2006·Granted Apr 20, 2010·47 cites·27 claims
- 0395US8163087B2Plasma enhanced atomic layer deposition system and methodFAGUET JACQUES·Filed 2005·Granted Apr 24, 2012·29 cites·11 claims
- 0495US7651568B2Plasma enhanced atomic layer deposition systemTOKYO ELECTRON LTD·Filed 2005·Granted Jan 26, 2010·26 cites·20 claims
- 0595US6755945B2Ionized PVD with sequential deposition and etchingTOKYO ELECTRON LTD·Filed 2002·Granted Jun 29, 2004·108 cites·43 claims
- 0695US6287435B1Method and apparatus for ionized physical vapor depositionTOKYO ELECTRON LTD·Filed 1999·Granted Sep 11, 2001·156 cites·12 claims
- 0794US6719886B2Method and apparatus for ionized physical vapor depositionTOKYO ELECTRON LTD·Filed 2001·Granted Apr 13, 2004·54 cites·28 claims
- 0889US8227344B2Hybrid in-situ dry cleaning of oxidized surface layersSELSLEY ADAM·Filed 2010·Granted Jul 24, 2012·12 cites·20 claims
- 0988US8178439B2Surface cleaning and selective deposition of metal-containing cap layers for semiconductor devicesTOHNOE KAZUHITO·Filed 2010·Granted May 15, 2012·20 cites·23 claims
- 1086US8242019B2Selective deposition of metal-containing cap layers for semiconductor devicesISHIZAKA TADAHIRO·Filed 2009·Granted Aug 14, 2012·12 cites·9 claims
- 1184US7776743B2Method of forming semiconductor devices containing metal cap layersTEL EPION INC·Filed 2008·Granted Aug 17, 2010·9 cites·23 claims
- 1279US7871929B2Method of forming semiconductor devices containing metal cap layersTEL EPION INC·Filed 2009·Granted Jan 18, 2011·6 cites·24 claims
- 1376US2024093356A1Ion beam deposition of a low resistivity metalVEECO INSTR INC·Filed 2023·Application pending·0 cites
- 1475US7348266B2Method and apparatus for a metallic dry-filling processTOKYO ELECTRON LTD·Filed 2005·Granted Mar 25, 2008·5 cites·38 claims
- 1574US7799681B2Method for forming a ruthenium metal cap layerTOKYO ELECTRON LTD·Filed 2008·Granted Sep 21, 2010·4 cites·24 claims
- 1674US2025340977A1Ion beam deposition of a low resistivity metalVEECO INSTR INC·Filed 2025·Application pending·0 cites
- 1772US8076241B2Methods for multi-step copper plating on a continuous ruthenium film in recessed featuresCERIO JR FRANK M·Filed 2009·Granted Dec 13, 2011·5 cites·30 claims
- 1869US7642201B2Sequential tantalum-nitride depositionTOKYO ELECTRON LTD·Filed 2008·Granted Jan 5, 2010·4 cites·20 claims
- 1968US2015034476A1Deposition of thick magnetizable films for magnetic devicesVEECO INSTR INC·Filed 2014·Application pending·0 cites
- 2066US7727912B2Method of light enhanced atomic layer depositionTOKYO ELECTRON LTD·Filed 2006·Granted Jun 1, 2010·2 cites·30 claims
- 2161US2021292889A1Ion beam deposition of a low resistivity metalVEECO INSTR INC·Filed 2021·Application pending·0 cites
- 2261US2024102150A1Ion beam deposition of ruthenium thin filmsVEECO INSTR INC·Filed 2023·Application pending·0 cites
- 2358US7744735B2Ionized PVD with sequential deposition and etchingTOKYO ELECTRON LTD·Filed 2004·Granted Jun 29, 2010·6 cites·30 claims
- 2457US2021404051A1Ion beam deposition of a low resistivity metalVEECO INSTR INC·Filed 2021·Application pending·0 cites
- 2557US2025266233A1Electrostatic chuck for ion beam deposition systemsVEECO INSTR INC·Filed 2025·Application pending·0 cites
- 2656US2009242385A1Method of depositing metal-containing films by inductively coupled physical vapor depositionTOKYO ELECTRON LTD·Filed 2008·Application pending·0 cites
- 2755US2015376776A1Variable-temperature material growth stages and thin film growthVEECO INSTR INC·Filed 2014·Application pending·0 cites
- 2854US7901545B2Ionized physical vapor deposition (iPVD) processTOKYO ELECTRON LTD·Filed 2004·Granted Mar 8, 2011·6 cites·12 claims
- 2953US2017025258A1Deposition of thick magnetizable films for magnetic devicesVEECO INSTR INC·Filed 2016·Application pending·0 cites
- 3052US6268284B1In situ titanium aluminide deposit in high aspect ratio featuresTOKYO ELECTRON LTD·Filed 1998·Granted Jul 31, 2001·16 cites·24 claims
- 3152US2007235319A1Multi-processing using an ionized physical vapor deposition (ipvd) systemTOKYO ELECTRON LTD·Filed 2006·Application pending·0 cites
- 3249US2009321247A1IONIZED PHYSICAL VAPOR DEPOSITION (iPVD) PROCESSTOKYO ELECTRON LTD·Filed 2009·Application pending·0 cites
- 3348US2010081274A1Method for forming ruthenium metal cap layersTOKYO ELECTRON LTD·Filed 2008·Application pending·0 cites
- 3444US2025233073A1Low resistivity tungsten interconnect structuresVEECO INSTR INC·Filed 2025·Application pending·0 cites
- 3542US7700484B2Method and apparatus for a metallic dry-filling processTOKYO ELECTRON LTD·Filed 2005·Granted Apr 20, 2010·0 cites·26 claims
- 3642US7618888B2Temperature-controlled metallic dry-fill processTOKYO ELECTRON LTD·Filed 2006·Granted Nov 17, 2009·0 cites·4 claims
- 3741US7892406B2Ionized physical vapor deposition (iPVD) processTOKYO ELECTRON LTD·Filed 2005·Granted Feb 22, 2011·0 cites·30 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →