Inventor · disambiguated record
Michael T. Andreas
Also filed as: ANDREAS MICHAEL · ANDREAS MICHAEL T · ANDREAS MICHAEL TRISTAN
45 granted patents·5 pending applications·1,098 citations·filing 1996–2021
98Inventor score
Files withMICRON TECHNOLOGY INC44NANYA TECHNOLOGY CORP2ANDREAS MICHAEL1ANDREAS MICHAEL T1KRAUS BRENDA D1
Top patents by PatentIndex Score
50 records- 0196US9653307B1Surface modification compositions, methods of modifying silicon-based materials, and methods of forming high aspect ratio structuresMICRON TECHNOLOGY INC·Filed 2016·Granted May 16, 2017·23 cites·25 claims
- 0296US5895550AUltrasonic processing of chemical mechanical polishing slurriesMICRON TECHNOLOGY INC·Filed 1996·Granted Apr 20, 1999·175 cites·14 claims
- 0394US5855811ACleaning composition containing tetraalkylammonium salt and use thereof in semiconductor fabricationMICRON TECHNOLOGY INC·Filed 1996·Granted Jan 5, 1999·138 cites·45 claims
- 0490US6468951B1Cleaning composition containing tetraalkylammonium salt and use thereof in semiconductor fabricationMICRON TECHNOLOGY INC·Filed 2000·Granted Oct 22, 2002·39 cites·61 claims
- 0590US6124207ASlurries for mechanical or chemical-mechanical planarization of microelectronic-device substrate assemblies, and methods and apparatuses for making and using such slurriesMICRON TECHNOLOGY INC·Filed 1998·Granted Sep 26, 2000·94 cites·36 claims
- 0690US6044851ACleaning composition containing tetraalkylammonium salt and use thereof in semiconductor fabricationMICRON TECHNOLOGY INC·Filed 1998·Granted Apr 4, 2000·86 cites·70 claims
- 0789US6787473B2Post-planarization clean-upMICRON TECHNOLOGY INC·Filed 2003·Granted Sep 7, 2004·33 cites·20 claims
- 0889US6265781B1Methods and solutions for cleaning polished aluminum-containing layers, methods for making metallization structures, and the structures resulting from these methodsMICRON TECHNOLOGY INC·Filed 1998·Granted Jul 24, 2001·92 cites·14 claims
- 0985US10497558B2Using sacrificial polymer materials in semiconductor processingMICRON TECHNOLOGY INC·Filed 2018·Granted Dec 3, 2019·3 cites·21 claims
- 1083US10916418B2Using sacrificial polymer materials in semiconductor processingMICRON TECHNOLOGY INC·Filed 2019·Granted Feb 9, 2021·2 cites·20 claims
- 1182US6375548B1Chemical-mechanical polishing methodsMICRON TECHNOLOGY INC·Filed 1999·Granted Apr 23, 2002·42 cites·57 claims
- 1282US6077785AUltrasonic processing of chemical mechanical polishing slurriesMICRON TECHNOLOGY INC·Filed 1998·Granted Jun 20, 2000·48 cites·42 claims
- 1381US7235494B2CMP cleaning composition with microbial inhibitorMICRON TECHNOLOGY INC·Filed 2005·Granted Jun 26, 2007·6 cites·51 claims
- 1481US6589882B2Copper post-etch cleaning processMICRON TECHNOLOGY INC·Filed 2001·Granted Jul 8, 2003·26 cites·17 claims
- 1581US6269511B1Surface cleaning apparatusMICRON TECHNOLOGY INC·Filed 2000·Granted Aug 7, 2001·38 cites·57 claims
- 1680US5963814AMethod of forming recessed container cells by wet etching conductive layer and dissimilar layer formed over conductive layerMICRON TECHNOLOGY INC·Filed 1997·Granted Oct 5, 1999·44 cites·103 claims
- 1779US6635562B2Methods and solutions for cleaning polished aluminum-containing layersMICRON TECHNOLOGY INC·Filed 2001·Granted Oct 21, 2003·21 cites·53 claims
- 1876US6399492B1Ruthenium silicide processing methodsMICRON TECHNOLOGY INC·Filed 2001·Granted Jun 4, 2002·18 cites·44 claims
- 1976US6273100B1Surface cleaning apparatus and methodMICRON TECHNOLOGY INC·Filed 1998·Granted Aug 14, 2001·44 cites·14 claims
- 2074US6358325B1Polysilicon-silicon dioxide cleaning process performed in an integrated cleaner with scrubberMICRON TECHNOLOGY INC·Filed 1999·Granted Mar 19, 2002·44 cites·52 claims
- 2173US8025809B2Polishing methodsMICRON TECHNOLOGY INC·Filed 2008·Granted Sep 27, 2011·2 cites·21 claims
- 2271US11651952B2Using sacrificial polymer materials in semiconductor processingMICRON TECHNOLOGY INC·Filed 2021·Granted May 16, 2023·0 cites·20 claims
- 2371US6387812B1Ultrasonic processing of chemical mechanical polishing slurriesMICRON TECHNOLOGY INC·Filed 2000·Granted May 14, 2002·10 cites·38 claims
- 2470US10593559B2Etching process in capacitor process of DRAM using a liquid etchant compositionNANYA TECHNOLOGY CORP·Filed 2016·Granted Mar 17, 2020·1 cites·9 claims
- 2570US6835121B2Chemical-mechanical polishing methodsMICRON TECHNOLOGY INC·Filed 2001·Granted Dec 28, 2004·8 cites·13 claims
- 2669US6936540B2Method of polishing a semiconductor substrate, post-CMP cleaning process, and method of cleaning residue from registration alignment markingsMICRON TECHNOLOGY INC·Filed 2003·Granted Aug 30, 2005·10 cites·60 claims
- 2769US6627550B2Post-planarization clean-upMICRON TECHNOLOGY INC·Filed 2001·Granted Sep 30, 2003·9 cites·31 claims
- 2865US6835668B2Copper post-etch cleaning processMICRON TECHNOLOGY INC·Filed 2002·Granted Dec 28, 2004·10 cites·18 claims
- 2964US7468105B2CMP cleaning composition with microbial inhibitorMICRON TECHNOLOGY INC·Filed 2001·Granted Dec 23, 2008·7 cites·59 claims
- 3062US6930017B2Wafer Cleaning method and resulting waferMICRON TECHNOLOGY INC·Filed 2003·Granted Aug 16, 2005·8 cites·26 claims
- 3161US7033978B2Post-planarization clean-upMICRON TECHNOLOGY INC·Filed 2003·Granted Apr 25, 2006·5 cites·17 claims
- 3256US7964109B2Method of cleaning a surface of a cobalt-containing material, method of forming an opening to a cobalt-containing material, semiconductor processing method of forming an integrated circuit comprising a copper-containing conductive line, and a cobalt-containing film cleaning solutionMICRON TECHNOLOGY INC·Filed 2008·Granted Jun 21, 2011·0 cites·34 claims
- 3354US7402259B2Chemical-mechanical polishing methodsMICRON TECHNOLOGY INC·Filed 2004·Granted Jul 22, 2008·2 cites·19 claims
- 3453US6740252B2Ruthenium silicide wet etchMICRON TECHNOLOGY INC·Filed 2002·Granted May 25, 2004·2 cites·5 claims
- 3553US2015203753A1Liquid etchant composition, and etching process in capacitor process of dram using the sameNANYA TECHNOLOGY CORP·Filed 2014·Application pending·0 cites
- 3652US7367343B2Method of cleaning a surface of a cobalt-containing material, method of forming an opening to a cobalt-containing material, semiconductor processing method of forming an integrated circuit comprising a copper-containing conductive line, and a cobalt-containing film cleaning solutionMICRON TECHNOLOGY INC·Filed 2006·Granted May 6, 2008·0 cites·31 claims
- 3752US7151026B2Semiconductor processing methodsMICRON TECHNOLOGY INC·Filed 2005·Granted Dec 19, 2006·0 cites·37 claims
- 3851US6613674B1Semiconductor processing methods of forming integrated circuitry, and methods of forming dynamic random access memory circuitryMICRON TECHNOLOGY INC·Filed 2000·Granted Sep 2, 2003·2 cites·12 claims
- 3950US7066790B2Chemical-mechanical polishing methodsMICRON TECHNOLOGY INC·Filed 2002·Granted Jun 27, 2006·1 cites·20 claims
- 4050US6908569B2Ruthenium silicide wet etchMICRON TECHNOLOGY INC·Filed 2003·Granted Jun 21, 2005·1 cites·9 claims
- 4150US6498110B2Ruthenium silicide wet etchMICRON TECHNOLOGY INC·Filed 2001·Granted Dec 24, 2002·1 cites·22 claims
- 4250US2005263489A1Ruthenium silicide wet etchKRAUS BRENDA D·Filed 2005·Application pending·0 cites
- 4348US7014537B2Method of processing a semiconductor substrateMICRON TECHNOLOGY INC·Filed 2004·Granted Mar 21, 2006·1 cites·20 claims
- 4448US6936534B2Method for the post-etch cleaning of multi-level damascene structures having underlying copper metallizationMICRON TECHNOLOGY INC·Filed 2003·Granted Aug 30, 2005·2 cites·8 claims
- 4548US2013008601A1Systems and methods for oscillating exposure of a semiconductor workpiece to multiple chemistriesMICRON TECHNOLOGY INC·Filed 2012·Application pending·0 cites
- 4646US2006003589A1Method for the post-etch cleaning of multi-level damascene structures having underlying copper metallizationANDREAS MICHAEL T·Filed 2005·Application pending·0 cites
- 4744US8283257B2Systems and methods for oscillating exposure of a semiconductor workpiece to multiple chemistriesANDREAS MICHAEL·Filed 2007·Granted Oct 9, 2012·0 cites·40 claims
- 4843US7023099B2Wafer cleaning method and resulting waferMICRON TECHNOLOGY INC·Filed 2004·Granted Apr 4, 2006·0 cites·4 claims
- 4943US6972227B2Semiconductor processing methods, and methods of forming a dynamic random access memory (DRAM) storage capacitorMICRON TECHNOLOGY INC·Filed 2002·Granted Dec 6, 2005·0 cites·20 claims
- 5037US2003224958A1Solutions for cleaning polished aluminum-containing layersFiled 2002·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →