Inventor · disambiguated record
Peter Keswick
Also filed as: KESWICK PETER · KESWICK PETER R
22 granted patents·1 pending application·2,541 citations·filing 1991–2007
97Inventor score
Top patents by PatentIndex Score
23 records- 0197US6518195B1Plasma reactor using inductive RF coupling, and processesAPPLIED MATERIALS INC·Filed 2000·Granted Feb 11, 2003·162 cites·8 claims
- 0297US5556501ASilicon scavenger in an inductively coupled RF plasma reactorAPPLIED MATERIALS INC·Filed 1993·Granted Sep 17, 1996·396 cites·15 claims
- 0396US6488807B1Magnetic confinement in a plasma reactor having an RF bias electrodeAPPLIED MATERIALS INC·Filed 2000·Granted Dec 3, 2002·145 cites·6 claims
- 0496US5399237AEtching titanium nitride using carbon-fluoride and carbon-oxide gasAPPLIED MATERIALS INC·Filed 1994·Granted Mar 21, 1995·275 cites·32 claims
- 0595US5888414APlasma reactor and processes using RF inductive coupling and scavenger temperature controlAPPLIED MATERIALS INC·Filed 1997·Granted Mar 30, 1999·203 cites·31 claims
- 0695US5423945ASelectivity for etching an oxide over a nitrideAPPLIED MATERIALS INC·Filed 1992·Granted Jun 13, 1995·220 cites·22 claims
- 0794US5158644AReactor chamber self-cleaning processAPPLIED MATERIALS INC·Filed 1991·Granted Oct 27, 1992·222 cites·12 claims
- 0893US6545420B1Plasma reactor using inductive RF coupling, and processesAPPLIED MATERIALS INC·Filed 1995·Granted Apr 8, 2003·135 cites·13 claims
- 0993US6068784AProcess used in an RF coupled plasma reactorAPPLIED MATERIALS INC·Filed 1993·Granted May 30, 2000·173 cites·28 claims
- 1092US6444137B1Method for processing substrates using gaseous silicon scavengerAPPLIED MATERIALS INC·Filed 1996·Granted Sep 3, 2002·127 cites·19 claims
- 1192US6251792B1Plasma etch processesAPPLIED MATERIALS INC·Filed 1997·Granted Jun 26, 2001·122 cites·18 claims
- 1290US6024826APlasma reactor with heated source of a polymer-hardening precursor materialAPPLIED MATERIALS INC·Filed 1996·Granted Feb 15, 2000·100 cites·68 claims
- 1386US6399514B1High temperature silicon surface providing high selectivity in an oxide etch processAPPLIED MATERIALS INC·Filed 2000·Granted Jun 4, 2002·30 cites·23 claims
- 1485US6218312B1Plasma reactor with heated source of a polymer-hardening precursor materialAPPLIED MATERIALS INC·Filed 1998·Granted Apr 17, 2001·61 cites·36 claims
- 1583US6440866B1Plasma reactor with heated source of a polymer-hardening precursor materialAPPLIED MATERIALS INC·Filed 2000·Granted Aug 27, 2002·22 cites·101 claims
- 1673US6699795B1Gate etch processCYPRESS SEMICONDUCTOR CORP·Filed 2002·Granted Mar 2, 2004·14 cites·20 claims
- 1772US6194325B1Oxide etch process with high selectivity to nitride suitable for use on surfaces of uneven topographyAPPLIED MATERIALS INC·Filed 1995·Granted Feb 27, 2001·41 cites·32 claims
- 1871US6036877APlasma reactor with heated source of a polymer-hardening precursor materialAPPLIED MATERIALS INC·Filed 1996·Granted Mar 14, 2000·30 cites·71 claims
- 1970US5990017APlasma reactor with heated source of a polymer-hardening precursor materialAPPLIED MATERIALS INC·Filed 1998·Granted Nov 23, 1999·32 cites·27 claims
- 2060US7901976B1Method of forming borderless contactsCYPRESS SEMICONDUCTOR CORP·Filed 2007·Granted Mar 8, 2011·3 cites·15 claims
- 2158US7112834B1Gate etch processCYPRESS SEMICONDUCTOR CORP·Filed 2004·Granted Sep 26, 2006·5 cites·7 claims
- 2256US6171974B1High selectivity oxide etch process for integrated circuit structuresAPPLIED MATERIALS INC·Filed 1992·Granted Jan 9, 2001·23 cites·15 claims
- 2330US2002004309A1Processes used in an inductively coupled plasma reactorFiled 1999·Application pending·0 cites
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