Inventor · disambiguated record
Yuen-Kui Wong
Also filed as: WONG YUEN-KUI · WONG YUEN-KUI JERRY
9 granted patents·338 citations·filing 1995–2000
91Inventor score
Technology areasH10P
Top patents by PatentIndex Score
9 records- 0185US6218312B1Plasma reactor with heated source of a polymer-hardening precursor materialAPPLIED MATERIALS INC·Filed 1998·Granted Apr 17, 2001·61 cites·36 claims
- 0283US6440866B1Plasma reactor with heated source of a polymer-hardening precursor materialAPPLIED MATERIALS INC·Filed 2000·Granted Aug 27, 2002·22 cites·101 claims
- 0381US5895937ATapered dielectric etch in semiconductor devicesAPPLIED KOMATSU TECHNOLOGY INC·Filed 1997·Granted Apr 20, 1999·52 cites·17 claims
- 0481US5607602AHigh-rate dry-etch of indium and tin oxides by hydrogen and halogen radicals such as derived from HCl gasAPPLIED KOMATSU TECHNOLOGY INC·Filed 1995·Granted Mar 4, 1997·63 cites·28 claims
- 0575US6036876ADry-etching of indium and tin oxidesAPPLIED KOMATSU TECHNOLOGY INC·Filed 1997·Granted Mar 14, 2000·48 cites·15 claims
- 0671US6036877APlasma reactor with heated source of a polymer-hardening precursor materialAPPLIED MATERIALS INC·Filed 1996·Granted Mar 14, 2000·30 cites·71 claims
- 0765US5843277ADry-etch of indium and tin oxides with C2H5I gasAPPLIED KOMATSU TECHNOLOGY INC·Filed 1995·Granted Dec 1, 1998·30 cites·24 claims
- 0857US5893757ATapered profile etching methodAPPLIED KOMATSU TECHNOLOGY INC·Filed 1997·Granted Apr 13, 1999·21 cites·36 claims
- 0947US5728608ATapered dielectric etch in semiconductor devicesAPPLIED KOMATSU TECHNOLOGY INC·Filed 1995·Granted Mar 17, 1998·11 cites·12 claims
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